Structure of quantum cascade detector

Abstract

The invention provides the structure of a quantum cascade detector, which comprises a substrate, a lower ohmic contact layer, a barrier isolation layer, a multi-cycle active region structure layer, an upper ohmic contact layer, an upper electrode and a lower electrode, wherein the lower ohmic contact layer is arranged on the substrate and is used for carrying out the high-concentration doping process to achieve the ohmic contact with electrode materials; the barrier isolation layer is arranged at the middle part of the lower ohmic contact layer to form a table top all around the lower ohmic contact layer, wherein the barrier isolation layer is not doped; the multi-cycle active region structure layer is arranged on the barrier isolation layer and constitutes the core part of the detector for detecting light current; the upper ohmic contact layer is arranged on the multi-cycle active region structure layer and is used for carrying out the high-concentration doping process to achieve the ohmic contact with the electrode materials; the upper electrode is prepared on the upper ohmic contact layer; and the lower electrode is prepared on the table top all around the lower ohmic contact layer.

Description

technical field [0001] The invention relates to semiconductor photoelectric detection technology, in particular to a quantum cascade detector structure. Background technique [0002] Infrared detectors are a class of detectors with important application value. Their applications cover various fields of military, medical, scientific research and daily life. It is of great significance to continuously explore and develop new and high-performance infrared detectors. At present, the detectors used as infrared focal plane detectors are mainly photoconductive HgCdTe infrared detectors or photoconductive quantum well infrared detectors. Since the applied electric field of the photoconductive detector will introduce a relatively large dark current, it is easy to saturate the readout circuit capacitance of the infrared focal plane array and bring relatively large dark current noise and power consumption, so no external electric field is required, and it works by photovoltaic effect ...

AI Technical Summary

Problems solved by technology

Since the applied electric field of the photoconductive detector will introduce a relatively large dark current, it is easy to saturate the readout circuit capacitance of the infrared focal plane array and bring relatively large dark current noise and power consumption, so no external electric field is required, and it works by photovoltaic effect Photovoltaic infrared detectors have always been widely concerned and researched, but the detection rate and operating temperature of ordinary photovoltaic infrared detectors are always inferior to those of photoconductive infrared detectors.

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