The invention discloses a radio frequency power amplifier with high linearity and high efficiency. The radio frequency power amplifier with high linearity and high efficiency comprises five capacitors: C1, C2, C3, C4 and C5, four resistances: R1, R2, R3 and R4, four N-channel metal oxide semiconductor (NMOS) pipes: M1, M2, M3 and M4 and two inductances: L1 and L2. Input radio frequency signals (Rfin) are respectively input to grids of the M1, M2 and M4 NMOS pipes through the C1, C2 and C3 capacitors, Vb1, Vb2, Vb3 and Vb4 bias voltages respectively provide direct current to the M1, M2, M3 and M4 NMOS pipes through the R1, R2, R3 and R4 resistances, drain electrode of the M2 NMOS pipe is connected with source electrode of the M4 NMOS pipe, and drain electrode of the M1 NMOS pipe is connected with source electrode of the M3 NMOS pipe. The radio frequency power amplifier with high linearity and high efficiency enhances puncture-resisting performance of a transistor, improves output power, and achieves high linearity and high efficiency of the power amplifier.