Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultra-wide-band low-noise high-balance on-chip active Balun

A low-noise, ultra-wideband technology, applied in the field of ultra-wideband radio frequency integrated circuits, can solve problems such as low noise figure that cannot be ultra-wideband, and achieve high balance, small noise figure, and wide bandwidth.

Active Publication Date: 2016-06-29
西安电子科技大学重庆集成电路创新研究院
View PDF3 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The active baluns of these common structures occupy a small area and are easy to integrate, but they cannot have the characteristics of low noise figure and high balance in the ultra-wide frequency band

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultra-wide-band low-noise high-balance on-chip active Balun
  • Ultra-wide-band low-noise high-balance on-chip active Balun

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0022] The invention is mainly composed of an input matching network, a first-stage cascode extremely low-noise amplifier, a second-stage amplifier using a Darlington differential amplifier, and an emitter-follower between the first stage and the second stage.

[0023] The input matching network uses a π-type matching network to match the input impedance of the overall circuit to 50Ω, while considering the parasitic capacitance C of the electrostatic protection diode ESD and input pipe Q 1 and bias tube Q 3 The parasitic capacitance C π and input pipe Q 1 Parasitic resistance, so as to achieve a good match in the broadband.

[0024] The first-stage cascode very low noise amplifier can achieve broadband characteristics, by Q 1 ,Q 2 , R 1 , R 2 , L 1 ,C 1 composition, where Q 1 , Q 2 Constitute the cascode structure, R 1 、C 1 to Q 2 provides bias...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an ultra-wide-band low-noise high-balance on-chip active Balun.The matching characteristic in an ultra wide band is achieved at the input end of a whole circuit by adopting a wide-band matching network.A first-stage amplifier adopts a common-emitter common-base low-noise amplifier to decrease the noise coefficients of the whole active Balun, and an on-chip inductor is adopted for an output of the first-stage amplifier to compensate high-frequency grain.A second-stage amplifier adopts a differential amplifier of a Darlington unit, a resistance feedback technology is adopted between a collector electrode and a base electrode of each Darlington tube to ensure the working stability of the Darlington tubes, and a series inductor is introduced for tail current of a Darlington unit differential pair to compensate a tail-current parasitic capacitor so as to improve the balance of output differential signals.The isolation and direct-current potential shifting between the first-stage amplifier and the second-stage amplifier are achieved through an emitter follower.The ultra-wide-band low-noise high-balance on-chip active Balun has the advantages of being small in noise coefficient, large in bandwidth and high in balance.

Description

technical field [0001] The invention belongs to the field of ultra-wideband radio frequency integrated circuits, and relates to an active balun with low noise figure and high balance characteristics in ultra-wideband. Background technique [0002] Balun, also known as balanced-unbalanced converter, as a single-ended to differential converter, has a wide application in fully differential amplifiers, phase shifters and balanced mixers in communication systems. Commonly used baluns can be roughly divided into two categories: passive baluns and active baluns. Passive baluns include passive transformer structures, transmission line coupler baluns, etc., which not only occupy a large area and are not conducive to integration, but also have a large insertion loss. The commonly used structures of active baluns include CG / CS structure, cascade-cascode structure, differential pair structure, etc. The active baluns of these common structures occupy a small area and are easy to integr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03H11/32
CPCH03H11/32H03F3/26
Inventor 李振荣庄奕琪权星邱芳
Owner 西安电子科技大学重庆集成电路创新研究院
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com