Micro-strip rectangular double annular circular-seam resonator-based frequency selectivity surface structure

A frequency-selective, surface-structured technology, applied in waveguide-type devices, circuits, electrical components, etc., can solve the problem of inability to have the same response to electromagnetic waves, and achieve the effects of small attenuation, adjustable resonant frequency, and small size

Inactive Publication Date: 2011-05-25
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Single or two microstrip rectangular double-annular slot resonators can form the unit structure of the frequency selective surface. In the prior art, the inner and outer annular slots are generally facing or facing each other, but this structure has strict requirements on the polarization direction of the incident electromagnetic wave, which cannot Make frequency selective surfaces respond equally to electromagnetic waves in all directions

Method used

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  • Micro-strip rectangular double annular circular-seam resonator-based frequency selectivity surface structure
  • Micro-strip rectangular double annular circular-seam resonator-based frequency selectivity surface structure
  • Micro-strip rectangular double annular circular-seam resonator-based frequency selectivity surface structure

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Effect test

Embodiment 1

[0023] refer to figure 1 and figure 2 , this embodiment provides a frequency selective surface structure based on microstrip rectangular double-slit resonators, including four microstrip rectangular double-slit resonators 1 , 2 , 3 , 4 and a dielectric substrate 10 . Each microstrip rectangular double-ring slot resonator 1, 2, 3, 4 respectively includes an inner ring 20 and an outer ring 30, each inner ring 20 and each outer ring 30 are respectively provided with an inner ring slot 21, an outer ring ring Seam 31, the inner ring seam 21 and the outer ring seam 31 are set opposite to each other. The inner annular seams 21 on the microstrip rectangular double annular seam resonators 1 , 2 , 3 , 4 are arranged facing different directions, and similarly, the outer annular seams 31 are also arranged facing different directions.

[0024] Such as Figure 5 As shown, four microstrip rectangular double-annular slot resonators 1, 2, 3, and 4 with different annular slot directions co...

Embodiment 2

[0031] refer to image 3 , the present embodiment is to deposit the frequency selective surface structure of the microstrip rectangular double annular slot resonator on the upper and lower surfaces of the dielectric substrate 10, from image 3 It can be seen that the upper surface of the dielectric substrate 10 is deposited with microstrip rectangular double-circular slot resonators 1 and 4 , and the lower surface of the dielectric substrate 10 is deposited with microstrip rectangular double-circular slot resonators 5 and 8 . refer to Figure 5 As shown, in this embodiment, the microstrip rectangular double annular slot resonators are arranged on the dielectric substrate 10 in a periodic microstrip array. Other Microstrip Rectangular Double Circular Slot Resonators not shown in image 3 superior.

[0032] The material of the dielectric substrate 10 in this embodiment is high-frequency hybrid ceramics, and its dielectric constant and thickness are 4.6 and 1.4 mm, respectivel...

Embodiment 3

[0038] refer to Figure 4 , this embodiment is a frequency selective surface structure in which a microstrip rectangular double annular slot resonator is deposited in the middle of the dielectric layer, and a microstrip rectangular double annular slot resonator 1, 4 is deposited between the dielectric substrate layer 10 and the dielectric substrate layer 11 , the microstrip rectangular double annular slot resonator is arranged in the middle of the dielectric layers 10 and 11 in a periodic microstrip array. The rest of the microstrip rectangular double annular slot resonators are not in Figure 4 on display.

[0039] The material of the dielectric substrate 10 in this embodiment is high-frequency hybrid ceramics, and its dielectric constant and thickness are 4.6 and 0.7 mm, respectively. The material of the microstrip rectangular double annular slot resonators 1, 2, 3, 4 is copper. The material of the dielectric substrate 10 in the present invention can be sapphire, ruby, hi...

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PUM

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Abstract

The invention discloses a micro-strip rectangular double annular circular-seam resonator-based frequency selectivity surface structure, which comprises a micro-strip rectangular double annular circular-seam resonator unit and a medium substrate, wherein a micro-strip rectangular double annular circular-seam resonator is arranged on one side or both sides of the medium substrate or clamped betweenmedium layers, and is provided with circular seams in different directions. In a working process, electromagnetic waves in different directions enter the frequency selectivity surface structure. The structure has the advantages of small size, adjustable resonance frequency, capability of realizing omnidirectional response to electromagnetic waves and the like.

Description

technical field [0001] The invention relates to the technical field of frequency selective surfaces, in particular to a frequency selective surface structure based on a microstrip rectangular double annular slot resonator. Background technique [0002] Frequency selective surfaces (FSS for short) is a single-layer or multi-layer quasi-planar structure composed of periodic conductive patch units or aperture units located on or sandwiched between dielectric layers. It has certain frequency selective characteristics for electromagnetic waves, and its essential feature is that it can present filtering characteristics for electromagnetic waves of different frequencies, different incident angles and different excitation states. Metamaterials are one of the research hotspots in the field of materials science and physics in recent years. Metamaterials have negative group velocity, negative refractive index, ideal imaging, inverse Doppler frequency shift, and abnormal Cherenkov radia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/203
Inventor 廖斌李松坡
Owner EAST CHINA NORMAL UNIV
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