Longitudinal-BJT-triggered SCR device used for ESD protection

Abstract

The invention belongs to the field of electronic technologies, and particularly provides a longitudinal-BJT-triggered SCR device used for ESD protection. The longitudinal-BJT-triggered SCR device (VBTSCR) introduces an extra triggering path on the basis of a traditional LSCR device. An ESD injection layer is introduced into a first conduction type well region, so as to form a longitudinal-structure base region floating NPN transistor. The ESD injection layer is a P-type doped region with a medium doping concentration, and the doping concentration thereof is between a drain / source heavily-dopedactive region concentration and a well region doping concentration. According to the SCR device, a common-emitter collector junction avalanche breakdown voltage BV<CEO> of the longitudinal-structurebase region floating NPN transistor is very low, when the base region floating NPN transistor serves as a triggering device of the SCR, significant reduction of the triggering voltage of the SCR device can be realized, thereby realizing the effect of providing effective ESD protection for circuits in an advanced nanometer technology.

Description

technical field [0001] The invention belongs to the field of electronic technology, and in particular relates to the design of an electrostatic discharge (ESD: Electro-Static discharge) protection circuit, especially a lateral silicon-controlled rectifier SCR (Silicon-Controlled-Rectifier referred to as SCR), specifically a device for ESD protection relies on vertical BJT triggered SCR devices. Background technique [0002] Electro-Static Discharge (ESD) is an event in which a limited charge is transferred between two objects of different potentials. In people's daily life, ESD phenomena can be seen everywhere; for example, at a relative humidity of 10%, people walking on carpets can generate up to 35,000 volts of electrostatic voltage. For integrated circuits, from production to transportation, system integration and user use, all processes may generate electrostatic discharge on the pins of integrated circuits. The instantaneous high-voltage electrostatic pulse generated...

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Problems solved by technology

[0006] With the continuous advancement of integrated circuit technology, the feature size continues to shrink; the continuous thinning of the MOSFET gate oxide layer makes the breakdown voltage BVox of the gate oxide layer continue to decrease, which greatly reduces the upper limit of the ESD design window, which makes many traditional ESD protection devices are no longer applicable; at the same time, in order to achieve low power consumption, the overall operating voltage of the chip is also on the decline, which will reduce the probability of latch-up of SCR devices

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