Complementary-type SCR (Silicon Controlled Rectifier) structure triggered by diode string in an auxiliary way

A diode string and complementary technology, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of high trigger voltage avalanche breakdown voltage, difficulty in applying integrated circuit ESD protection, etc., and achieve small silicon chip area and low trigger The effect of voltage

Inactive Publication Date: 2010-07-07
ZHEJIANG UNIV
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  • Abstract
  • Description
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Problems solved by technology

[0011] The disadvantage of the above complementary SCR structure is mainly that its trigger voltage (avalanche breakdown voltage between the N-type su

Method used

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  • Complementary-type SCR (Silicon Controlled Rectifier) structure triggered by diode string in an auxiliary way
  • Complementary-type SCR (Silicon Controlled Rectifier) structure triggered by diode string in an auxiliary way
  • Complementary-type SCR (Silicon Controlled Rectifier) structure triggered by diode string in an auxiliary way

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Example Embodiment

[0054] A complementary SCR structure assisted by a diode string trigger according to the present invention, its equivalent circuit diagram is as follows image 3 shown, it includes:

[0055] The first thyristor SCR1 is composed of a first bipolar transistor 30 and a second bipolar transistor 31, wherein the emitter of the first bipolar transistor 30 is connected to the positive power line VDD, and the The base is connected to the positive power line VDD through the N-well resistor 36; the emitter of the second bipolar transistor 31 is connected to the chip pin IN to be protected, and the base of the second bipolar transistor 31 is connected to the P-well resistor 37. negative supply line VSS;

[0056] The second thyristor SCR2 is composed of a third bipolar transistor 32 and a fourth bipolar transistor 33, wherein the emitter of the third bipolar transistor 32 is connected to the chip pin IN to be protected, and the third The base of the bipolar transistor 32 is connected to...

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Abstract

The invention discloses a complementary-type SCR structure triggered by a diode string in an auxiliary way. In the structure, two bipolar transistors form a first controlled silicon for ESD (Electro-Static discharge) protection between a positive power line and a chip pin to be protected; another two bipolar transistors form a second controlled silicon for ESD protection between the chip pin to be protected and a negative power line; and a bipolar transistor in the first controlled silicon and the second controlled silicon to form a third controlled silicon for ESD protection between the positive power line and the negative power line. The invention adopts the diode string to reduce the triggering voltage of each controlled silicon and is particular suitable for ESD protection in an integrated circuit by a deep submicron process.

Description

technical field [0001] The invention belongs to the field of integrated circuits, in particular to a complementary SCR structure used to improve the reliability of integrated circuit ESD protection. Background technique [0002] The phenomenon of electrostatic discharge (ESD) in nature is the most important reliability problem that causes the failure of integrated circuit products. Relevant research surveys show that 30% of integrated circuit failure products are caused by electrostatic discharge phenomena. Therefore, improving the reliability of integrated circuit electrostatic discharge protection has a non-negligible effect on improving the yield of products and even driving the entire national economy. [0003] Electrostatic discharge phenomenon is usually divided into three discharge modes according to the source of charge: HBM (Human Body Discharge Model), MM (Machine Discharge Mode), and CDM (Component Charge Discharge Mode). The two most common electrostatic discha...

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Application Information

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IPC IPC(8): H01L27/06H01L23/60
Inventor 李明亮董树荣韩雁宋波苗萌马飞
Owner ZHEJIANG UNIV
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