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787results about How to "Stop the leak" patented technology

Method and device for protecting data on basis of AES real-time encryption

The invention relates to a method and a device for protecting data on the basis of AEC real-time encryption. The method comprises the following steps: generating an initial key by a true random number generator in a system, storing the generated initial key into a nonvolatile memory, and then generating each-round expandable sub-keys by the initial key in the nonvolatile memory. The invention has the following advantages: in the whole process, only commands for starting the true random number generator is controlled by a processor, the other procedures are realized by a hardware circuit, the processor and software are prohibited from participation, and bus transaction is not involved, thereby ensuring the safety of the key and preventing the key from being revealed; a sub-key expansion RAM is lead in by adopting AES crypto-algorithm encryption, an address automatically adds 1 or subtracts 1 according to each-round encryption/decryption operation, thereby solving the system speed bottleneck problem caused by too long elapsed time for expanding the key in the AES algorithm realized by the traditional method; and a buffer is added between the processor and the channel of the AES algorithm, thus improving the encrypting/decrypting speed, and realizing programme operating on an encrypted memorizer in real time.
Owner:HANGZHOU SYNOCHIP DATA SECURITY TECH CO LTD

Dynamic and static pressure mixing lubricating end face sealing structure

ActiveCN108757945AMeet the requirements of positive and negative rotationIncrease stiffnessEngine sealsImpellerMultiple forms
The invention discloses a dynamic and static pressure mixing lubricating end face sealing structure which comprises a dual-end-face sealing structure, a single end face sealing structure and a seriesconnection sealing structure. The dual-end-face sealing structure feeds buffering gas to carry out zero leakage sealing on toxic and dangerous technological gas and comprises a static ring and a movable ring; the static ring has the axial degree of freedom and is provided with a lubricating gas passage, a lubricating gas pressure stabilization cavity, a porous medium friction pair and a high-precision displacement sensor and other structure; and the movable ring rotates along with a rotary shaft. Lubricating gas with adjustable pressure is fed to generate controllable gas static pressure; oneor more annular cavities penetrating through the circumferential direction are formed in the radial direction of the lubricating gas pressure stabilization cavity; the end face of the movable ring canbe a smooth end face, or a dynamic pressure groove structure is processed on the end face of the movable ring; and the groove type of the dynamic pressure groove has multiple manners including a traditional spiral groove, T-shaped groove or a novel rhombus groove structure. Under the extreme conditions including high temperature, high pressure, high rotating speed, ultralow temperature and the like, frequent start and halt and sealing of the mechanical shaft end of an impeller operating under variable working conditions can be realized.
Owner:XI AN JIAOTONG UNIV

Full-seedling and strong-plant cultivation method for corn

The invention belongs to the technical field of agricultural cultivation and discloses a full-seedling and strong-plant cultivation method for corn. The cultivation method comprises steps as follows: seed selection and coating, furrowing and bedding, returning of straw to field, layered fertilization, precision sowing, chemical weeding and film mulching, final singling at suitable time and field management. According to the method, furrows are dug between corn sowing rows in a un-fallowing and no-tillage ridged field, bottom layers of dressing furrows are covered with chopped straw, the straw can prevent upper-layer fertilizer from leaking down, the decomposed straw becomes fertilizer and can be absorbed and used by corn roots, isolation is performed with loam for layered fertilization, and one-time fertilization can be used by the corn in the whole growth period; holes are dug in rows in a sowing region, two healthy, full and vigorous corn seeds are sown in each hole for final singling at suitable time; the fertilization region is covered with a mulch after chemical weeding, and the temperature under the mulch is higher than the subsurface temperature of the corn sowing region, so that fertilizer and water under the mulch slowly permeate soil in the corn sowing region, full-seedling, strong-seedling and strong-strain of the corn are realized, and the basis for increasing the corn yield is consolidated.
Owner:HUAIAN AGRI TECH EXTENSION CENT

Wireless communication system and radio station

A wireless communication system wherein a simple structure is used to maintain, even under a quasi-static fading environment of wireless communication, the transmission quality of a wireless line used between particular radio stations, while reducing the influence of radio wave interference with other radio stations using the same frequency band, and further preventing information from leaking to other radio stations. A transmitter station (101) selects, based on quality information of a transmission path (104), an optimum one of a plurality of antennas to transmit a packet from the selected antenna to a receiver station (102). The receiver station (102) uses an antenna, selected from among a plurality of antennas, to receive the packet from the transmitter station (101), and switches from the currently selected antenna to another one. Then, the receiver station (102) transmits, from the other antenna, a response packet, which is responsive to the received packet, to the transmitter station (101). The transmitter station (101) uses the plurality of antennas to receive the response packet, and selects, as a packet transmission antenna, an antenna, which exhibits the best reception quality, to transmit a packet from the selected antenna to the receiver station (102). This process is repeated hereafter.
Owner:PANASONIC CORP

GaN-based III-V compound semiconductor LED (light emitting diode) epitaxial wafer and production method thereof

This application discloses a GaN-based III-V compound semiconductor LED (light emitting diode) epitaxial wafer and a production method thereof. The GaN-based III-V compound semiconductor LED epitaxial wafer structurally comprises a substrate, a low temperature GaN buffer layer, a first high temperature non-doped GaN layer and a second high temperature non-doped GaN layer, wherein an AlGaN/GaN superlattice layer is formed on the second high temperature non-doped GaN layer, a high temperature N type GaN layer is formed on the AlGaN/GaN superlattice layer, a stress release layer, an MQW protection layer, a P type electron barrier layer and a high temperature P type GaN layer are formed on the high temperature N type GaN layer, a contact layer is formed on the high temperature P type GaN layer, SiN mask/N type GaN layers are periodically inserted into the high temperature N type GaN layer, and the number of periods of the SiN mask/N type GaN layers ranges from 5 to 20. The GaN-based III-V compound semiconductor LED epitaxial wafer has the advantages of signally improving antistatic ability, effectively enhancing recombination efficiency of current carriers, and improving internal quantum efficiency of an LED.
Owner:XIANGNENG HUALEI OPTOELECTRONICS
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