Shallow quantum well growth method for increasing light emitting efficiency of GaN-based LED (Light-Emitting Diode)
A shallow quantum well and growth method technology, applied in the field of GaN material preparation, can solve problems such as limited effects, achieve good interception and storage effects, improve recombination efficiency, and reduce V-type defects
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[0017] The embodiments of the present invention are described in detail below: the present embodiment is implemented on the premise of the technical solution of the present invention, and provides a detailed implementation manner and a specific operation process, but the protection scope of the present invention is not limited to the following implementations example.
[0018] like figure 1 As shown, the LED epitaxial structure provided by the present invention includes: a substrate layer 1, a low-temperature GaN buffer layer 2, an undoped high-temperature GaN buffer layer 3, a Si-doped n-type GaN layer 4, a shallow quantum well 5, and a plurality of light-emitting layers. A quantum well 6 , a low temperature p-type GaN layer 7 , a p-type AlGaN electron blocking layer 8 , a high-temperature p-type GaN layer 9 , and a p-type GaN contact layer 10 .
[0019] The specific implementation steps of the method for improving the GaN-based LED shallow quantum well growth structure and ...
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