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Method for designing quantum barrier used for enhancing light emitting diode (LED) brightness

A technology of light-emitting diodes and design methods, applied in the field of quantum barrier design, can solve problems such as limited effects, achieve good interception and storage effects, improve recombination efficiency, and reduce electron migration

Inactive Publication Date: 2013-10-09
合肥彩虹蓝光科技有限公司
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Problems solved by technology

The above method improves the radiative recombination efficiency of quantum wells to a certain extent, but the effect is limited

Method used

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  • Method for designing quantum barrier used for enhancing light emitting diode (LED) brightness

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Embodiment Construction

[0016] The embodiments of the present invention are described in detail below: the present embodiment is implemented under the premise of the technical solution of the present invention, and detailed implementation and specific operation process are provided, but the protection scope of the present invention is not limited to the following implementation example.

[0017] like figure 1 As shown, the LED epitaxial structure provided by the present invention includes: a substrate layer 1, a low-temperature GaN buffer layer 2, an undoped high-temperature GaN buffer layer 3, a Si-doped n-type GaN layer 4, a shallow quantum well 5, and multiple light-emitting layers. Quantum well 6, low-temperature p-type GaN layer 7, p-type AlGaN electron blocking layer 8, high-temperature p-type GaN layer 9, p-type GaN contact layer 10.

[0018] The specific implementation steps of a quantum barrier design method for improving brightness provided by the present invention are as follows:

[0019...

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Abstract

The invention discloses a method for designing a quantum barrier used for enhancing light emitting diode (LED) brightness. An epitaxial slice structure of an LED comprises a substrate layer, a low-temperature GaN buffer layer, a non-doped high-temperature GaN buffer layer, a Si doped n-type GaN layer, a luminescent layer multiple quantum well, a low-temperature p-type GaN layer, a p-type AlGaN electronic barrier layer, a high-temperature p-type GaN layer and a p-type GaN contact layer in sequence from bottom to top. The luminescent layer multiple quantum well comprises a low-temperature shallow quantum well and a low-temperature multiple quantum well luminescent layer from bottom to top, wherein the multiple quantum well luminescent layer is divided into three parts, namely a first quantum well barrier layer, a second quantum well barrier layer and a third quantum well barrier layer. The first quantum well barrier layer grows in the mode that aluminum components are not doped; the second quantum well barrier layer grows in the mode that 10% of the aluminum components are doped, and the total thickness is kept unchanged; the third quantum well barrier layer grows in the mode that 5%-8% of the aluminum components are doped, and the total thickness is also kept unchanged. By means of the method, GaN series light emitting diodes with high luminous intensity can be obtained.

Description

[0001] technical field [0002] The invention relates to the technical field of preparation of GaN-based materials, more specifically, to a quantum barrier design method for improving the brightness of LED light-emitting diodes by improving the growth structure of the light-emitting layer in the GaN-based LED quantum well. [0003] Background technique [0004] GaN (gallium nitride)-based materials are ionic crystals. Due to the misalignment of positive and negative charges, spontaneous polarization is formed; in addition, due to the lattice fit between InGaN (indium gallium nitride) and GaN materials, piezoelectric electrodes to form a piezoelectric polarization field. The existence of the polarization field, on the one hand, reduces the equivalent band gap of the quantum well and red-shifts the luminous wavelength; on the other hand, the overlap of the wave functions of electrons and holes decreases, reducing the probability of their radiative recombination. [0005] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 李永
Owner 合肥彩虹蓝光科技有限公司
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