Quantum dot electroluminescent device, display apparatus comprising the deivce and illumination apparatus comprising the device

An electroluminescent device and quantum dot light-emitting technology, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve problems such as charge injection imbalance, and achieve improved luminous efficiency, high recombination efficiency, and extended brightness half-life. Effect

Active Publication Date: 2016-03-30
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present application aims to provide a quantum dot electroluminescent device, a display device and a lighting device having it, so as to solve the problem of unbalanced charge injection on the quantum dot light-emitting layer in the prior art

Method used

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  • Quantum dot electroluminescent device, display apparatus comprising the deivce and illumination apparatus comprising the device
  • Quantum dot electroluminescent device, display apparatus comprising the deivce and illumination apparatus comprising the device
  • Quantum dot electroluminescent device, display apparatus comprising the deivce and illumination apparatus comprising the device

Examples

Experimental program
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Effect test

Embodiment 1

[0042] 1) Clean the anode ITO (indium tin oxide) with a thickness of 200nm.

[0043] Ultrasonic cleaning with ethanol, deionized water and acetone for 10 min, followed by N 2 Dry the liquid adhering to the surface of the glass, and undergo ozone-ultraviolet treatment for 10 minutes to remove impurities on the surface of the ITO.

[0044] 2) Making the first functional layer.

[0045] In an air environment, spin-coat PEDOT:PSS (polystyrene sulfonic acid solution) on a clean ITO transparent conductive glass at a speed of 3000 rpm for 45 seconds. After the spin coating is completed, it is annealed at 140° C. for 30 minutes in the air. Then transfer it to a glove box in a nitrogen atmosphere, anneal at 100°C for 40 minutes, and finally form a layer of PEDOT:PSS on the surface of ITO, that is, form a hole injection layer. Then spin-coat UGH-1 (diphenyl-p-di-o-tolylsilane) chlorobenzene solution (concentration: 8 mg / ml) on the PEDOT:PSS layer at a speed of 2000 rpm for 45 seconds...

Embodiment 2

[0056] The difference with embodiment 1 is: the concentration of PMMA acetone solution is 0.125mg / ml in the making process of the first charge adjustment layer, and the thickness of the first charge adjustment layer formed is 1nm; Quantum dot is red light quantum dot, and emission wavelength is 640nm. Spin-coat a layer of Zn on the second charge regulation layer during the fabrication of the second functional layer 0.95 Mg 0.05 O ethanol solution (concentration is 60mg / ml), the rotating speed is 2000 rpm, and the spin coating time is 45 seconds.

Embodiment 3

[0058] The difference from Example 1 is that the concentration of the PMMA ethyl benzoate solution is 2 mg / ml during the preparation process of the first charge adjustment layer, and the formed thickness is 16 nm.

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PUM

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Abstract

The invention provides a quantum dot electroluminescent device, a display apparatus comprising the device and an illumination apparatus comprising the device. The quantum dot electroluminescent device comprises a first electrode, a first function layer, a first charge adjusting layer, a quantum dot luminescent layer, a second charge adjusting layer, a second function layer and a second electrode which are successively arranged, wherein materials of the first charge adjusting layer and the second charge adjusting layer are respectively independently selected from insulation materials with energy gaps Eg greater than and equal to 5eV, and the thickness of the first charge adjusting layer and the thickness of the second charge adjusting layer both range from 1 to 30nm. The luminescence efficiency of the device is quite high, and the half-period life of the brightness of the device is quite long.

Description

technical field [0001] The present application relates to the technical field of optoelectronic devices, in particular, to a quantum dot electroluminescence device, a display device and an illumination device having the same. Background technique [0002] Quantum dots are a new type of nano-luminescent material with a diameter in the range of 1-20nm. Due to its small size, the electrons and holes inside it will be restricted in motion, resulting in a quantum confinement effect. The continuous energy band structure becomes a molecular-specific discrete energy level structure. When the quantum dot is excited, Electrons recombine with holes and emit photons after transitioning from the conduction band to the valence band. Its emission spectrum can be adjusted by adjusting the size of quantum dots, and has the advantages of good monochromaticity of emission spectrum and high luminous efficiency. It is a kind of photoelectric functional material with broad application prospects....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50
CPCH10K50/115H10K50/171H10K50/18H10K50/17
Inventor 甄常刮陈超
Owner NANJING TECH CORP LTD
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