Light emitting diode epitaxy and growing method of light emitting diode electronic barrier layer

An electron blocking layer and light-emitting diode technology, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of poor crystal quality and lattice mismatch, and achieve the effect of reducing the degree of lattice mismatch and improving the recombination efficiency.

Inactive Publication Date: 2014-12-10
EPITOP PHOTOELECTRIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in the prior art, when AlGaN with high aluminum (Al) composition is directly grown on gallium nitride (GaN), due to the large lattice difference between the two, lattice mismatch will be caused at the interface, and the crystal quality will be reduced. Bad question

Method used

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  • Light emitting diode epitaxy and growing method of light emitting diode electronic barrier layer
  • Light emitting diode epitaxy and growing method of light emitting diode electronic barrier layer
  • Light emitting diode epitaxy and growing method of light emitting diode electronic barrier layer

Examples

Experimental program
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Effect test

Embodiment 1

[0038] The 60nm AlGaN electron blocking layer of light-emitting diodes was grown by the gradual gradient change doping method, [Al x GaN 1-x (2%

[0039] 1) Sapphire (Al 2 o 3 ) The patterned substrate is placed in the reaction chamber, and the flow rate is 110L / min of H 2 Heating to 1100°C and baking for 7 minutes under the atmosphere, the pressure of the reaction chamber is 500Torr;

[0040] 2) Grow a GaN buffer layer with a thickness of 40nm at 540°C, where the reaction chamber pressure is 500Torr, N 2 、H 2 and NH 3 The flow ratio is 75:150:56;

[0041] 3) Grow a GaN undoped layer with a thickness of 2000nm at 1070°C, wherein the reaction chamber pressure is 200Torr, N 2 、H 2 and NH 3 The flow ratio is 75:150:56;

[0042] 4) Grow a silicon-doped N-type GaN doped layer with a thickness of 1400 nm at 1080° C., wherein the reaction chamber pressure is 200 Torr, N 2 、H 2 and NH 3 The flow ratio is 64:120:50;

[0043] 5) Grow a GaN / InGaN / GaN quantum well l...

Embodiment 2

[0048] The 45nm AlGaN electron blocking layer of light-emitting diodes was grown by the transition gradient change doping method, [Al x GaN 1-x (2%

[0049] 1) Sapphire (Al 2 o 3 ) The patterned substrate is placed in the reaction chamber, and the flow rate is 110L / min of H 2 Heating to 1100°C and baking for 7 minutes under the atmosphere, the pressure of the reaction chamber is 500Torr;

[0050] 2) Grow a GaN buffer layer with a thickness of 40nm at 540°C, where the reaction chamber pressure is 500Torr, N 2 、H 2 and NH 3 The flow ratio is 75:150:56;

[0051] 3) Grow a GaN undoped layer with a thickness of 2500nm at 1070°C, wherein the reaction chamber pressure is 200Torr, N 2 、H 2 and NH 3 The flow ratio is 75:150:56;

[0052] 4) Grow a silicon-doped N-type GaN doped layer with a thickness of 1400 nm at 1080° C., wherein the reaction chamber pressure is 200 Torr, N 2 、...

Embodiment 3

[0058] The 42nm AlGaN electron blocking layer of light-emitting diodes was grown by the transition gradient change doping method, [Al x GaN 1-x (3%

[0059] 1) Sapphire (Al 2 o 3 ) The patterned substrate is placed in the reaction chamber, and the flow rate is 110L / min of H 2 Heating to 1100°C and baking for 7 minutes under the atmosphere, the pressure of the reaction chamber is 500Torr;

[0060] 2) Grow a GaN buffer layer with a thickness of 40nm at 540°C, where the reaction chamber pressure is 500Torr, N 2 、H 2 and NH 3 The flow ratio is 75:150:56;

[0061] 3) Grow a GaN undoped layer with a thickness of 2500nm at 1070°C, wherein the reaction chamber pressure is 200Torr, N 2 、H 2 and NH 3 The flow ratio is 75:150:56;

[0062] 4) Grow a silicon-doped N-type GaN doped layer with a thickness of 1400 nm at 1080° C., wherein the reaction chamber pressure is 200 Torr, N 2 、H 2...

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Abstract

An embodiment of the invention provides light emitting diode epitaxy and a growing method of a light emitting diode electronic barrier layer. The method includes: sequentially growing a non-doping layer, an N type doping layer and a quantum well light emitting layer from bottom to top on a substrate; sequentially growing a AlGaN electronic barrier layer and a P type doping layer from bottom to top on the quantum well light emitting layer, wherein the content of Al in the AlGaN electronic barrier layer changes according to gradient along with the increasing of the growing thickness of the AlGaN electronic barrier layer. The method has the advantages that the mismatch degree of crystal lattices of an epitaxy interface layer by using the gradually varied crystal lattice size, influence of V-shaped defects generated in a quantum well area on a P type area is avoided effectively, electrons can be effectively prevented from entering a P type hole area due to gradually varied energy level structure design, and the compositing efficiency of the electrons and holes in a quantum well active area is increased.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor manufacturing technology, in particular to a method for growing an epitaxy of a light emitting diode and an electron blocking layer of the light emitting diode. Background technique [0002] Improving the internal quantum efficiency of the quantum well has always been a major problem in the design of the epitaxial structure of a light emitting diode (LED). The traditional method is to grow an aluminum gallium nitride (AlGaN) electron blocking layer on the quantum well. The purpose is to Prevent electrons from entering the P-type region, so as to increase the recombination efficiency of electrons and holes in the quantum well region. [0003] However, in the prior art, when AlGaN with high aluminum (Al) composition is directly grown on gallium nitride (GaN), due to the large lattice difference between the two, lattice mismatch will be caused at the interface, and the crystal quality will be re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/32H01L33/00
CPCH01L33/0075
Inventor 焦建军黄炳源周德保康建梁旭东
Owner EPITOP PHOTOELECTRIC TECH
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