Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The gallium nitride-basedlight emitting diode epitaxial wafer comprises a substrate, an N-type semiconductor layer, an active layer, an electron barrier layer and a P-type semiconductor layer; the N-type semiconductor layer,the active layer, the electron barrier layer and the P-type semiconductor layer are sequentially stacked on the substrate; the electron barrier layer comprises a first sub-layer, a second sub-layer and a third sub-layer stacked in sequence; the first sub-layer is made from BxGa1-xN, and x is more than 0 and not more than 1; the second sub-layer is made from GaN; and the third sub-layer is made from ByGa1-yN, and y is more than 0 and not more than 1. According to the gallium nitride-based light emitting diode epitaxial wafer and the manufacturing method thereof, the GaN layer is inserted intothe BGaN layer or the BN layer, so that the electron leakage can be effectively reduced and the hole injection can be increased, and finally the light emitting efficiency of the LED can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Due to the current improvement in the quality of gallium nitride (GaN)-based semiconductor materials and improvements in device manufacturing, GaN-based LEDs are expected to replace traditional incandescent and fluorescent lamps. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate. The substrate is used to provide a gr...

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Problems solved by technology

[0007] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and its manufacturing method, which can solve the problem that the electron blocking layer in the prior art not only cannot effectively confine electrons in the active layer, but also blocks the P-type semiconductor layer. Provided holes are injected into the active layer, resulting in a decrease in the luminous efficiency of the LED

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