Epitaxial growth method and structure for blocking electron leakage and defect extension

A technology of electron leakage and epitaxial growth, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of insufficient light efficiency, electron leakage, etc., and achieve the effect of improving luminous efficiency, good electron leakage, and improving crystal quality
CN103746054AActive Publication Date: 2014-04-23XIANGNENG HUALEI OPTOELECTRONICS
4 Cites 8 Cited by

Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
XIANGNENG HUALEI OPTOELECTRONICS
Publication Date
2014-04-23

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides an epitaxial growth method for blocking electron leakage and defect extension. The method comprises letting NH3, TMGa and TMAl in between a growth multi-quantum well InxGa(1-x)N / GaN layer and a growth P-type GaN layer, and growing an electron barrier layer with a growth thickness of 8 to 25 nm, wherein the layer comprises two to six groups of double-layer structures, and compared to the Al component content of the UAlGaN layer of the last double-layer structure, the Al component content of the UAlGaN layer of each double-structure is increased by 15% to 50%. According to the invention, the UAlGaN / UGaN structure with layer-to-layer gradually increased Al components is utilized as an electron barrier layer, the single energy level height distribution of a conventional P-spacer energy band is changed, the blocking effects on cavity injection are weakened, and the MQW luminescence efficiency is improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of LED epitaxial design, in particular to an epitaxial growth method and structure for blocking electron leakage and defect extension. Background technique

[0002] GaN-based light-emitting diodes (LEDs) have been widely used in traffic lights, outdoor full-color displays, urban landscape lighting, automotive interior and exterior lights, and tunnel lights. Large-size high-power chip specifications such as 30mil*30mil, 45mil*45mil, 50mil*50mil, etc. are mostly used for lighting. The key technology of large-size chips no longer defines the luminous performance of large-size chips by high lumens, but uses lumens / watt (ie, light efficiency) as an important indicator to measure high-power light-emitting devices.

[0003] At present, most innovations to improve large-scale light efficiency lie in the improvement of the quantum well layer and the P-type layer, such as reducing the energy band distortion of the qu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More