Device for controlling photo-etching machine immerge

A technology of control device and lithography machine, which is applied in the direction of photolithography exposure device and micro-lithography exposure equipment, etc. It can solve the problems affecting the image quality of exposure, light scattering, and negative exposure quality, so as to avoid the leakage and splash of boundary liquid , reduce the probability and intensity, and avoid the effect of residual water marks

Inactive Publication Date: 2008-12-24
ZHEJIANG UNIV +1
View PDF7 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Liquid recirculation will increase the temperature of the liquid during the exposure process and the accumulation of pollutants (such as PAG components in the photoresist), and the vortex in the flow field will also cause the tiny bubbles contained in the liquid to aggregate into large bubbles. When projecting through the recirculation area, it will cause aberration and affect the exposure image quality
[0009] (3) Duri

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for controlling photo-etching machine immerge
  • Device for controlling photo-etching machine immerge
  • Device for controlling photo-etching machine immerge

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0044] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0045] like figure 1 As shown, the assembly of the immersion control device and the projection lens group according to the embodiment of the present invention is shown, and the device can be applied in lithography equipment such as step-and-repeat or step-and-scan type. During exposure, light from a light source (not shown) (eg, ArF or F2 excimer laser) passes through an aligned reticle (not shown), projection lens group 1 and filled with immersion liquid The lens-silicon wafer gap field exposes the photoresist on the surface of the substrate 3 .

[0046] As shown in Figure 2, image 3 , Figure 4 , representing the immersion control device of an embodiment of the present invention, including a sealing member 2A, an upper end cap 2B, a liquid injection pipe 2C and a recovery pipe 2D, wherein:

[0047] 1) Sealing member 2A:

[0048] From the center to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an immersion control device used for a photoetching machine; a circular flow field cushion chamber, a sealing structure and a drying cavity are arranged from an injection cavity and a recovery cavity outwards in sequence; the flow field cushion chamber can carry out compensation to an exposure flow field in real time so as to reduce the occurrence probability and intensity of liquid backflow; the sealing structure adopts a combination mode of surface characteristic processing of hydrophilic and hydrophobic and the structure design of a tension groove; the section of the tension groove is a triangle inclined outwards in the direction vertical to a substrate; liquid which is drawn to move by the substrate forms backflow so as to restrain the liquid leakage; the drying cavity is filled with matters with super absorbent and communicated with negative pressure, and discharges possible residue of droplets in real time; simultaneously, the mode of conveying the liquid adopts positive pressure to feed the liquid and free flowing of recovery side, thus avoiding fluctuation of flow field caused by the incoordination of liquid injection and recovery pressure.

Description

technical field [0001] The invention relates to an immersion control device for a photolithography machine. Background technique [0002] Modern lithography equipment is based on optical lithography, which uses an optical system to accurately project and expose patterns on a mask onto a photoresist-coated substrate (such as a silicon wafer). It includes a laser light source, an optical system, a projection mask composed of chip patterns, an alignment system and a substrate covered with photosensitive photoresist. [0003] The immersion lithography system fills a certain liquid in the gap between the projection lens and the substrate, and increases the numerical aperture (NA) of the projection lens by increasing the refractive index (n) of the medium in the gap, thereby improving the resolution of lithography. rate and depth of focus. [0004] It has been proposed to fill the gap between the end element of the projection device and the substrate by completely immersing the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F7/20
Inventor 付新陈晖陈文昱阮晓东杨华勇李小平
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products