Photoelectric detector and photoelectric detection apparatus

A photodetector and photodetection technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem of reducing the contrast between photocurrent and dark current, and achieve the effect of reducing dark current and improving contrast

Active Publication Date: 2016-12-21
BOE TECH GRP CO LTD
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Problems solved by technology

[0004] Embodiments of the present invention provide a photodetector and a photodetection system to solve the problem in the prior

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  • Photoelectric detector and photoelectric detection apparatus
  • Photoelectric detector and photoelectric detection apparatus
  • Photoelectric detector and photoelectric detection apparatus

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Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention more clear, the specific implementation manners of the photodetector and the photodetection device provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0029] The thickness, size and shape of each layer of the film in the drawings do not reflect the true proportion of the photodetector, and the purpose is only to illustrate the content of the present invention.

[0030] An embodiment of the present invention provides a photodetector, such as figure 1 and figure 2 As shown, it includes: a photosensitive active layer 100, a first electrode 200 and a second electrode 300 located at one side of the photosensitive active layer 100 that are insulated from each other and arranged at intervals, and the first electrode 200 and the second electrode 300 are respectively connected to the photosensitive active layer...

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Abstract

The invention discloses a photoelectric detector and a photoelectric detection apparatus. A third electrode is arranged on one side, away from a first electrode and a second electrode, of a light sensing active layer. By applying voltage, different from the voltage of the first electrode or the second electrode, to the third electrode, electric field is at least formed between the third electrode and one of the first electrode and the second electrode, so the total electric field direction in the photoelectric detector is changed to other directions from the original horizontal direction, thereby changing an electron leakage channel. Therefore, dark current caused by a horizontal electric field can be reduced, and when the photoelectric detector carries out optical detection to generate light current, the contrast ratio of the light current to the dark current can be increased.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a photoelectric detector and a photoelectric detection device. Background technique [0002] Metal-Semiconductor-Metal (MSM) photodetectors use the Schottky barrier between the metal and semiconductor interfaces to form a carrier depletion region similar to a PN junction. The photogenerated carriers generated by the incident light in the semiconductor drift in the reverse Schottky junction depletion region under the action of an external electric field, and are quickly collected by the electrodes at both ends of the photodetector. MSM structured light detectors are widely used in various photon and particle detectors because of their simple structure, small parasitic capacitance, fast response speed, and low manufacturing process cost. [0003] In the existing photodetector with MSM structure, a horizontal electric field will be generated under the action of an applied v...

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Application Information

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IPC IPC(8): H01L31/108H01L31/0224
CPCH01L31/022408H01L31/1085H01L31/0224H01L31/02327H01L31/09
Inventor 马占洁
Owner BOE TECH GRP CO LTD
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