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Method for growing epitaxial structure of LED

A growth method and epitaxial structure technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low quantum well radiation recombination efficiency, electron leakage, insufficient hole injection, etc., to suppress electron leakage, reduce stress, and effectively The effect of increasing the barrier height

Inactive Publication Date: 2018-09-18
XIANGNENG HUALEI OPTOELECTRONICS
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Problems solved by technology

[0006] The invention solves the problems of insufficient hole injection, serious electron leakage and quantum well radiation recombination efficiency existing in the existing LED multi-quantum well layer by designing a multi-quantum well structure with a gradual change in the In content of the quantum well layer, a gradual change in the temperature of the barrier layer, and a gradual change in thickness. Low problem, thus improving the luminous efficiency of LED

Method used

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  • Method for growing epitaxial structure of LED
  • Method for growing epitaxial structure of LED

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Embodiment 1

[0038] This embodiment adopts the LED epitaxial structure growth method provided by the present invention, adopts MOCVD to grow high-brightness GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):

[0039] A method for growing an LED epitaxial structure, which sequentially includes: processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, a...

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Abstract

The application discloses a method for growing an epitaxial structure of an LED. The method comprises: processing a substrate; growing a low-temperature buffer layer GaN; growing an undoped GaN layer;growing a Si-doped N type GaN layer; alternately growing InxGa(1-x)N / GaN multi-quantum well layers; growing a AlGaN electron blocking layer; growing a Mg-doped P type GaN layer; and then carrying cooling. According to the invention, on the basis of the multi-quantum well structures with the In content gradation of quantum well layers, barrier layer temperature gradation, and thickness gradation,problems of insufficient hole injection, serious electron leakage and low quantum well radiation recombination efficiency of the existing LED multi-quantum well layer can be solved, so that the luminous efficiency of the LED is improved.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to a method for growing an LED epitaxial structure. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When electric current flows, electrons and holes recombine in it to emit monochromatic light. As a high-efficiency, environmentally friendly, and green new solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low luminous efficiency, which affects the energy-saving effect of LEDs. [0003] However, limiting factors such as electron leakage and poor hole injection efficiency have greatly hindered the further improvement of the performance...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/32
CPCH01L33/007H01L33/06H01L33/32
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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