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Ultraviolet LED epitaxial structure

An epitaxial structure and ultraviolet technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low quantum efficiency and low emission power in ultraviolet LEDs, and achieve the purpose of weakening the quantum-confined Stark effect, increasing the hole injection rate, Effect of suppressing electron leakage

Active Publication Date: 2017-10-20
GUANGDONG UNIV OF TECH
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Problems solved by technology

[0006] In view of this, the present invention provides a UV LED epitaxial structure to solve the problem of low internal quantum efficiency and emission power of UV LEDs in the prior art

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Embodiment Construction

[0027] As mentioned in the background section, the internal quantum efficiency and emission power of AlGaN-based ultraviolet LEDs in the prior art are relatively low.

[0028] At present, the main reasons for the low luminous efficiency of AlGaN-based ultraviolet LED light sources are: the low carrier injection efficiency of AlGaN materials with high Al composition, which restricts the improvement of quantum efficiency in ultraviolet LEDs; the structural properties of AlGaN materials with high Al composition determine their light emission low efficiency.

[0029] Based on this, the present invention provides a kind of ultraviolet LED epitaxial structure, it is characterized in that, comprises:

[0030] Substrate;

[0031] An undoped buffer layer, an N-type AlGaN layer, a multi-quantum well structure, a superlattice structure, an electron blocking layer, a P-type AlGaN layer, and a P-type GaN layer are sequentially grown on the substrate;

[0032] Wherein, the superlattice st...

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Abstract

The application provides an ultraviolet LED epitaxial structure which includes a substrate, and an undoped buffer layer, an N-type AlGaN layer, a multiple-quantum-well structure, a superlattice structure, an electron blocking layer, a P-type AlGaN layer and a P-type GaN layer grown on the substrate in sequence. The superlattice structure includes at least one first AlGaN layer and at least one second AlGaN layer which are stacked alternately. As the superlattice structure is arranged between the multiple-quantum-well structure and the electron blocking layer, the strain between the last quantum barrier in the active region and the electron blocking layer can be alleviated, electron leakage can be inhibited, and the hole injection rate can be increased. Therefore, the light output power and internal quantum efficiency of ultraviolet LEDs are improved, and ultraviolet LEDs present better luminescent property.

Description

technical field [0001] The present invention relates to the technical field of semiconductor optoelectronics, in particular to an ultraviolet LED (Light-Emitting Diode, light-emitting diode) epitaxial structure. Background technique [0002] Ultraviolet (UV) LED is a kind of LED. Compared with traditional gas ultraviolet light sources such as mercury lamps and xenon lamps currently on the market, UV LEDs have a long lifespan, cold light source, no heat radiation, and lifespan is not affected by the number of opening and closing times. , high energy, high uniform irradiation efficiency, no toxic substances and other powerful advantages, making it the most promising to replace the existing ultraviolet high-pressure mercury lamp and become the next generation of ultraviolet light source. [0003] Ultraviolet LEDs have great application value in medical treatment, sterilization, printing, lighting, data storage and secure communication. 365nm is the most typical wavelength in t...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/12H01L33/14H01L33/32
Inventor 何苗黄波王成民周海亮王润
Owner GUANGDONG UNIV OF TECH
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