LED epitaxial structure

Abstract

The invention discloses an LED epitaxial structure. The LED epitaxial structure comprises a substrate, a buffer layer, a u type gallium nitride layer, an n type gallium nitride layer, an electron barrier layer, a multiple-quantum well layer and a p type gallium nitride layer, wherein the substrate, the buffer layer, the u type gallium nitride layer, the n type gallium nitride layer, the electron barrier layer, the multiple-quantum well layer and the p type gallium nitride layer are arranged in a stacked mode in sequence from bottom to top. According to the LED epitaxial structure, due to the fact that the electron barrier layer is arranged between the n type gallium nitride layer and the multiple-quantum well layer, electron injection is effectively stopped, electron leakage is reduced, hole injection is increased, and thus the luminous efficiency is improved; due to the fact that an n type AlGaN / GaN superlattice structure is inserted in the space between an n type GaN layer and an active area to replace the AlGaNEBL in a traditional structure, electron injection is effectively stopped, electron leakage is reduced, hole injection is increased, and thus the luminous efficiency is further improved. The LED epitaxial structure can be widely applied to the LED field.

Description

technical field [0001] The invention relates to the field of LEDs, in particular to an LED epitaxial structure. Background technique [0002] LED has been recognized as the new solid-state light source most likely to enter the field of general lighting, so it has become the focus of global attention in recent years. In recent years, the third-generation wide-bandgap semiconductor materials represented by SiC and GaN have received widespread attention and vigorous research. In particular, III-V nitride semiconductor materials (AlN, GaN and InN) and their related alloys and heterojunctions have significant advantages in high-temperature, high-frequency, high-power electronic devices and short-wavelength optoelectronic devices, and are in the near future. Breakthrough progress has been made in several years of research and application. [0003] The growth of epitaxial structure is the key technology of LED chips, and multiple quantum wells are the most important part of the e...

AI Technical Summary

Problems solved by technology

Traditional epitaxial structures such as figure 1 As shown, the last quantum barrier of the multi-quantum well layer in this structure is connected to the P-type AlGaN electron blocking layer, which blocks the injection of holes while blocking electron transport, so the overall luminous efficiency of the light-emitting diode cannot be improved.

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