68 results about "Lead field" patented technology

The invention relates to a special flame-retardant light diffuser grade polycarbonate composition for an LED (light-emitting diode), which comprises the following components in parts by weight: 100 parts of polycarbonate, 0.05-10 parts of light diffuser, 0.1-3 parts of heat stabilizer, 0.1-3 parts of light stabilizer and 5-30 parts of flame retardant. According to the technical scheme, the prepared polycarbonate composition achieves the effect of high-efficiency flame retardant; and the haze and light transmittance of the material are well balanced, thereby greatly widening the application range of the polycarbonate composition in the LED field. The product prepared from the special flame-retardant light diffuser grade polycarbonate composition for an LED has the excellent properties of high environment-friendly flame retardancy and balanced haze and light transmittance, and meets the requirements for use safety of the material under the condition of a severe environment.

The invention discloses an epitaxial slice of a GaN-based light emitting diode (LED) and a preparation method thereof, and belongs to the LED field. The preparation method of the epitaxial slice of the GaN-based LED includes a step of sequentially growing a buffer layer, an N type layer, a stress release layer, a multiple quantum well layer and a P type layer on a substrate, wherein each period of the multiple quantum well layer comprises an InyGa1-y N layer and a GaN layer, the stress release layer is of a super lattice structure, each period of the stress release layer comprises an InxGa1-x N layer and another GaN layer, y is larger than x, x is larger than 0, growth temperature of the stress release layer is gradually reduced along with periodicity change from the N type layer, and the content of In of each InxGa1-x N layer is increased layer by layer along with the periodicity change. The preparation method of the epitaxial slice of the GaN-based LED effectively delays growth of V-shaped defects by using the temperature varying and In content varying stress release layer and arranging a high temperature and low In content growth stress release layer on one side of the epitaxial slice of the GaN-based LED, close to the N type layer, and thereby effectively reduces the quantity of the V-shaped defects, improves crystalline quality of the multiple quantum well layer, and then improves inner quantum efficiency and antistatic ability of the GaN-based LED.

It is provided a LED light (10) for a motor vehicle, comprising several LED fields (14), wherein each LED field (14) comprises at least one LED (L1, L2, L3, L4), a housing (34) for supporting the LED fields (14) and a circuit board (12) comprising a driving electronics for operating the LED fields (14), wherein the LED fields (14) are connected in series by the driving electronics and the driving electronics is adapted to switch on and off each LED field (14) according to its position in the series in dependence of a signal, wherein the circuit board (12) is connectable to an outside of the LED light (10) located current source (16) for applying an electrical current to the LED fields (14), and wherein the circuit board (12) is integrated into the housing (34). Since complicated and/or changing switching orders of the LED fields (14) are not intended the necessary circuit board (12) for providing the corresponding driving electronics may be so small that it may be integrated into the housing (34) of the LED light (10) without significantly increasing the building space. Particularly a lot of wires between a central control unit and the different LED fields (14) are omitted as well as the central control unit itself so that the LED light (10) only requires a small building space.

This invention relates to LED field, which discloses a white light LED and its packaging method. The white light LED includes chip, frame, silicon glue, fluorescence power film and periphery parts (such as lens). Difference between the packaging structures is that the space between the fluorescence power and chip is isolated by some materials such as silicon glue, which makes the heat of the fluorescence power and chip isolate; and the fluorescence power film brim contacts with the substrate, which makes the fluorescence power's heat conduct to the exterior to avoid the gather of fluorescence power heat. The chip is fixed on the frame, the silicon glue covers on the chip directly, the designed and prepared fluorescence power film cover on the silicon glue, and the fluorescence power film contact with the cup bowl. This method improves the light producing efficiency, and improves the stability of the light color greatly, and lowers the light decline. And the packaging method is simple, which is fit for industrial production in large scale.

An amount of fluid in a thoracic or other region of a subject may be monitored by internally injecting an electrical energy stimulus (e.g., constant voltage source) through the region, detecting voltage resulting from the electrical energy stimulus, and calculating a fluid volume indicative signal. The injected energy stimulus creates a first lead field. The responsive voltage is detected using an electrode configuration that defines a second lead field, which is arranged in a negative sensitivity configuration with respect to the first lead field at the region being monitored.

The invention relates to a nitride-based LED epitaxial wafer structure and a processing method, belonging to the LED field. The nitride-based LED epitaxial wafer structure has high light extraction efficiency and good crystal quality. A GaN buffer layer, a first si-doped GaN layer, a dielectric layer, a second si-doped GaN layer, an InGaN/GaN multiple quantum well, a mg-doped AlGaN layer and a mg-doped GaN layer are arranged on the substrate of the nitride-based LED epitaxial wafer structure in a bottom-up order. A sapphire substrate with (0001) face is put into the reaction chamber and heat treated under the atmosphere of H2; the temperature is lowered to grow the GaN buffer layer, on which the first si-doped GaN layer grows; then the temperature is lowered and the sample is taken out.

The invention discloses a design of a novel magnetic coupling resonant wireless electric energy transmission device. The device mainly comprises parts such as a frequency tracking adaptive control system, a radio frequency power amplifier system, a power amplifier power detection system, a magnetic transmitting and receiving system and a rectifying and voltage regulating system. The system belongs to the leading field of high frequency electromagnetic theory engineering application, and solves the problem of electric energy wireless transmission robustness control. According to the device, the problem that the power and the efficiency of the conventional wireless electric energy transmission device are susceptible to interference to be obviously reduced is solved; and the device has high robustness, high reliability, intelligence and great application prospect.

The present invention provides an apparatus and method for realize robust channel estimation in communicating system. A training sequence is configured that training symbols therein are insensitive to synchronization errors. In an embodiment of the invention, each training symbol in the time-domain is the circulating prefix form of a front training symbol. The training sequence can be inserted into the leading field or the loading field of a frame. According to the training sequence generated by a embodiment of the invention, the circulating prefix of a training symbolic is also the circulating postfix of a front training symbolic. The sequence can be used for robust channel estimation in SISO/MIMO communicating system. When the modulating symbols are used to generate training symbols, a same group of training sequence can be used for performing demodulation performance measuring and channel estimation.

The invention provides a field bus control system for an intelligent light-emitting diode (LED) lamp. The field bus control system at least comprises a master controller and a plurality of slave controllers, wherein the slave controllers comprise a first slave controller, a second slave controller, ..., an (N-1)th slave controller and an Nth slave controller; a signal wire of the master controller is at least directly connected to the first slave controller, the second slave controller or/and the next slave controller; and a signal wire of one of the slave controllers is at least directly connected to the next slave controller or/and the second next slave controller or/and the third next slave controller adjacent to the controller. The field bus control system aims to solve the problems of difficulty in management, limitation to a communication distance, low fault tolerant capability and the like of an LED field control bus in the prior art.

The invention is suitable for LED field and provides an anti-streaking row-scanning control chip and an anti-streaking LED display circuit, wherein the chip comprises a two-row-scanning enablement pin and a two-row-scanning control pin connected with an LED row line, a streaking enablement pin and an external streaking signal pin, a first switch tube and a second switch tube, and a streaking signal generation unit that is used to generate a row line streaking pulse controlling the row line discharge parasitic charge based on a row line enablement signal, a gating unit that is used for processing a row line shadow pulse and an external streaking signal, and for outputting the processed external streaking signal when the streaking mode enablement signal is the external input streaking signal state, and for outputting the processed row line streaking pulse when the streaking mode enablement signal is the internal generated streaking pulse state. The streaking function is integrated into the row-scanning control chip, or the LED row line is processed for streaking through an external streaking signal, therefore, the display screen wiring difficulty is reduced due to high integration and the application cost is reduced.

The invention provides an optical data processing method, a system and an LED device, which are applicable to the LED field. The method of the invention comprises the steps as follows: a PC host computer corrects and compresses the optical data of an obtained display picture so as to generate Gamma data and the gain data of different colour temperature; the LED device obtains gain data and carries out decompression interpolation to the Gamma data; the LED device carries out format conversion to the Gamma data and generates Gamma table data. In the invention, a colour analyser sends the optical data to the PC host computer which corrects and compresses the optical data and generates the Gamma data and the gain data; the corrected and compressed data is sent to the LED device to carry out decompression verification, thus realizing the completion of correction and compression process without the LED device and reducing the running pressure of the LED device.

The invention provides a network access method and device of WIFI equipment of intelligent household. The method at the sending end comprises the steps that different WIFI hot spots are switched successively to transmit leading beacon frames corresponding to the different WIFI hot spots, SSID fields of the lead beacon frames are set to form lead fields, so that a reception end determines whether a lead field combination satisfying a preset condition exists based on the received lead fields; and if the lead field combination satisfying the preset condition exists, subsequent beacon frames are sent, the source of the subsequent beacon frames is consistent with that of the lead beacon frames of the lead fields satisfying the preset condition, and the SSID fields of the subsequent beacon frames comprise WIFI routing authentication information, so that the reception end can connect the WIFI equipment to the WIFI router based on the WIFI routing authentication information. The method is rapid, convenient, safe and reliable.

According to the concept learning-based thorough perception and dynamic understanding method provided by the invention, scene analysis and information mining based on deep learning are leading fields of information science at present, are successfully applied to segmentation, classification and identification of various scenes, and obtain a large number of excellent results; on the basis of feature extraction, static reasoning based on the Bayesian network is already applied to image diagnosis or understanding, and feasibility is provided for automatically extracting scene multi-source multi-mode features and performing reasoning under a concept framework. On the basis, based on robot collaborative dynamic reasoning and perception coupling, the dynamic perception and deep understanding problems of a large-space complex scene can be effectively solved, and the accuracy is far higher than the performance of using a single deep neural network and static reasoning.

The invention discloses a reworking method for an LED epitaxial wafer with a DBR, belonging to the LED field. The method comprises that the front side of the LED epitaxial wafer which needs reworking is uniformly provided with a layer of photoresist, and the back side of the LED epitaxial layer is provided with a DBR film layer; the DBR film layer is removed in an RIE (Reactive Ion Etching) manner, the etching power ranges from 400 to 700 W, the etching pressure ranges from 20 to 30 mtorr, the etching temperature ranges from 0 to 10 DEG C, the etching thickness is greater than the thickness of the DBR film layer, and etching gas includes CHF3 and O2 of 50-80 sccm; the photoresist is removed via an organic solvent; and the back side of the LED epitaxial wafer from which the photoresist is removed is provided with a DBR film layer in a vapor plating manner. According to the reworking method, the DBR film layer at the back side of the LED epitaxial wafer which needs reworking is removed in the RIE manner, and the RIE manner includes gas etching, so that the LED epitaxial layer is avoided from fragmentation and further loss caused by grinding.

The invention provides a patterned substrate, a mask used for manufacturing the patterned substrate and a patterned substrate manufacturing method. The patterned substrate is a patterned substrate with microstructures which consist of kinds of luminous bodies and reflecting bowls, can greatly improve the luminance of an LED (light-emitting diode) chip and can especially improve axial luminance. Masks which form the patterned substrate use pinhole diffraction and filter principles, the structure is simple, the special design is not required, the masks are easy to prepare and the cost is low. The patterned substrate manufacturing method adopts a pinhole diffraction exposure and ICP (inductively coupled plasma) etching method, the process is simple, the method is easy to realize, the progress of introducing concepts and structure of macroscopic fields into the microscopic LED field to improve the axial luminance of the LED chip is accelerated.

The invention discloses a high-power LED (light emitting diode) field lamp heat dissipation device of heat pipe heat conduction type. A plurality of pre-punching fins are penetrated into two fin plate rows by utilizing a plurality of pre-bent U-shaped heat pipes, and then the two fin plate rows are installed at the back part of a lamp seat symmetrically at two sides by utilizing a clamping plate and a screw. Thus, the heat energy generated by a high-power LED lamp is conducted to a heat pipe through a metal base plate and a lamp base, and then is conducted to fins through the heat pipe, and the heat exchange process of the fins is finished through natural convection. The high-power LED field lamp heat dissipation device has the advantages of large heat dissipation space, high natural heat dissipation efficiency, good uniform temperature, light weight and the like.

The invention discloses a transparent, low-halogen and anti-yellowing epoxy pouring sealant applied to the micro-electronics field and the LED field and a preparation method of the transparent, low-halogen and anti-yellowing epoxy pouring sealant. The pouring sealant comprises a component A and a component B, wherein the component A comprises the following raw materials in parts by weight: 60-100 parts of low-halogen bisphenol A epoxy resin, 0.1-2 parts of an organic silicon defoamer, and 0.05-1 part of toner; the component B comprises the following raw materials in parts by weight: 60-100 parts of methylhexahydrophthalic anhydride, 0-3 parts of flexibilizer, 0.2-1 part of a light stabilizer, and 1-5 parts of a curing accelerator; the mass ratio of the component A to the component B is (1-1.2):1. The preparation method is characterized in that the component A is dispersed for 20-50min at high speed according to the formula; the component B is mixed according to the formula; then the temperature is increased to be 60-80 DEG C; the mixture is stirred for 1-3 hours. According to the transparent, low-halogen and anti-yellowing epoxy pouring sealant, a halogen-free intermediate-temperature curing accelerator is used; the mixing ratio of the materials and the production process are optimized to produce the transparent, low-halogen and anti-yellowing epoxy pouring sealant which meets the requirement of EU on the content of halogen in pouring sealing materials; meanwhile, the transparent, low-halogen and anti-yellowing epoxy pouring sealant is outstanding in anti-yellowing performance and outstanding in toughness.

The invention belongs to the field of manufacture of high polymer materials, and discloses an FPC substrate polyimide film special for LED and a preparation method thereof. The preparation method comprises the following steps: dissolving 4,4'-diaminodiphenyl ether in a strongly polar aprotic organic solvent, and additionally dissolving pyromellitic dianhydride therein by stirring; (2) adding 1,5'-diaminonaphthalene to the solution from the step (1) for polymerization to obtain a polyamide acid solution; and (3) preparing the FPC substrate polyimide film special for LED by thermal imidization of the polyamide acid solution from the step (2). The PI film provided in the invention has the functional characteristics of high elasticity modulus, small thermal expansion coefficient and low thermal shrinkage, thus exhibiting good dimensional stability and high economic practicality, and can be extensively used as a good substrate for a flexible circuit board in the LED field.

The invention discloses a high-temperature-resistant long-carbon-chain polyamide and a synthesis method thereof. The structure of the high-temperature-resistant long-carbon-chain polyamide is as shown in the following formula (I) which is as shown in the specification, wherein a is 10-100, b is 10-200, c is 10-100, d is 10-100, and R refers to polyesteramide. The high-temperature-resistant long-carbon-chain polyamide disclosed by the invention has high mechanical properties and heat resistance, low water absorption and excellent processability, and can be applied to the fields such as electrical and electronic fields, LED field, automotive filed, aerospace and military fields, and the like.

In allusion to the problems that a conventional chromatic aberration type display method exists a color cast phenomenon, a shutter type three-dimensional display method is high in cost, etc., the present invention provides a novel 3D display method in the LED field. An LED 3D display module and an LED 3D display system which are provided by the present invention enable the light to be changed from the original unpolarized light into the polarized light by utilizing the characteristic that the light possesses a vibration direction after the light passes a polariscope. If the polariscope is combined correspondingly to generate the polarized light of two different directions, and the two sets of generated polarized light is respectively mapped to a left eye and a right eye of an audience wearing a specially-produced glasses possessing the polarizing lenses, the audience can appreciate a 3D stereo image.

The invention provides an LED packaging method suitable for the LED field. The LED packaging method includes the following steps that a silicon chip is provided with metal sheets in a vapor deposition mode, wherein the distance between each pair of metal sheets equals the distance between the positive electrode of each flip-chip wafer and the negative electrode of the flip-chip wafer, and the width of each metal sheet is larger than that of the positive electrode and that of the negative electrode; the flip-chip wafers are fixed to the metal sheets to make the positive electrodes and the negative electrodes in one-to-one correspondence to the metal sheets; the silicon chip is coated with fluorescent adhesives; the fluorescent adhesives between adjacent flip-chip wafers are removed; transparent packaging adhesives are applied, and an array-type LED film is obtained; the array-type LED film is taken down and cut into a plurality of LED packaging single bodies. According to the LED packaging method, because the flip-chip wafers are packaged on the silicon chip and a packaging body is only composed of the flip-chip wafers, the fluorescent adhesives, the transparent packaging adhesives and the metal sheets, reliability is high, materials are saved, and cost is low. Limitations on shapes of supports do not exist, and therefore large-scale integrated packaging is facilitated; loss caused by scattering-in of photons in fluorescent powder is reduced, and therefore product brightness can be conveniently improved; because it is not needed that the bottoms of the wafers are coated with Au-Sn alloy layers, cost is reduced.

The present invention discloses a manufacturing method of a QD film structure, and belongs to the LED field. The manufacturing method comprises the concrete steps of cleaning a substrate, drying, etching a groove or a hole, pouring the QD powder in the groove or the hole, and depositing a functional film (a waterproof air isolating thin film) to form the QD film structure. According to the presentinvention, the quantum dots are enclosed between a functional film layer and a base material thin film layer, on one hand, the contact of the quantum dots with the air and the water is avoided, the quantum dots can be used for a long time under a temperature of 120 DEG C and are not influenced by the water and the air, and the limitation of the environmental conditions is reduced. According to the packaging demands of the subsequent modules, the quantum dots are poured according to a certain arrangement form directly to manufacture a thin film structure, and the thin film structure can be cutflexibly according to the demands and even is mounted directly, thereby improving the packaging efficiency.

The invention is applied to the LED field and provides an LED packaging support module, an LED packaging support single body and an LED packaging structure. The LED packaging support module comprises a metal lead frame and a plurality of reflector cups molded on the metal lead frame. The metal lead frame comprises a supporting frame and a plurality of metal lead single bodies arrayed in the supporting frame, and adjacent metal lead single bodies are directly connected. Compared with the prior art, the LED packaging support module has the advantages that a rib plate is omitted, more metal lead single bodies and reflector cups can be manufactured in unit area, so more LED packaging support single bodies can be cut out, the utilization rate of materials is increased, and the cost of the LED packaging support single bodies can be effectively lowered. The LED packaging support single body is formed by cutting the LED packaging support module and is low in cost. The LED packaging structure uses the LED packaging support single body, and is low in cost and applicable to various circuit boards with different structures.