Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of quantum dot (QD) film structure

A production method and quantum dot film technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of low color gamut, achieve the effect of improving packaging efficiency and reducing the limitation of environmental conditions

Inactive Publication Date: 2018-05-11
左洪波
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main problem of LCD display technology is the low color gamut range, and the light purity emitted by QD is very high. Using it as a backlight can greatly improve the color gamut and make the color more vivid, and through the QD film, it can generate light close to the natural spectrum. Color, the application prospect is promising

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of quantum dot (QD) film structure
  • Manufacturing method of quantum dot (QD) film structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0016] figure 1 For the production process of the quantum dot film structure, figure 2 It is a side view of the quantum dot film layer structure. Clean and dry the transparent substrate or film 1 (sapphire, glass, PET, acrylic, etc.); engrave regular grooves or holes 3 on the transparent substrate or film according to the subsequent module package arrangement requirements; QD powder (QD is in the form of powder, dispersed in ink or photosensitive adhesive); according to the different forms of slots or holes and actual needs, a waterproof and air-blocking film (polyurethane, ring, etc.) can be deposited on one or both sides of a transparent substrate or film. Oxygen resin, silicone resin, parylene and other single-layer or multi-layer composite film structure) 2 and thin film 4.

[0017] The above content is a further detailed description ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a manufacturing method of a QD film structure, and belongs to the LED field. The manufacturing method comprises the concrete steps of cleaning a substrate, drying, etching a groove or a hole, pouring the QD powder in the groove or the hole, and depositing a functional film (a waterproof air isolating thin film) to form the QD film structure. According to the presentinvention, the quantum dots are enclosed between a functional film layer and a base material thin film layer, on one hand, the contact of the quantum dots with the air and the water is avoided, the quantum dots can be used for a long time under a temperature of 120 DEG C and are not influenced by the water and the air, and the limitation of the environmental conditions is reduced. According to the packaging demands of the subsequent modules, the quantum dots are poured according to a certain arrangement form directly to manufacture a thin film structure, and the thin film structure can be cutflexibly according to the demands and even is mounted directly, thereby improving the packaging efficiency.

Description

technical field [0001] The invention belongs to the technical field of LED packaging, and in particular relates to a method for manufacturing a quantum dot film structure. Background technique [0002] Quantum Dot (Quantum Dot, referred to as QD) is made of semiconductor materials synthesized by zinc, cadmium, selenium, sulfur and other elements. Nanoparticles with a diameter of 2-10nm have the characteristics of high luminous efficiency, long service life and good color purity. . By changing the size and chemical composition of quantum dot materials, the fluorescence emission wavelength can cover the entire visible light region. [0003] Because QDs are highly oxidizable, even a little air or water can completely destroy the quantum dots. Therefore, if it is to be used in the air, the quantum dots must be treated to isolate air and water. At present, the usual method of QD application is: 1) pouring QD into a glass thin tube, and encapsulating both sides; 2) double-layer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/50H01L33/54H01L33/56
CPCH01L33/505H01L33/54H01L33/56H01L2933/0041H01L2933/005
Inventor 左洪波刘双良张学军
Owner 左洪波
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com