Semiconductor white light light-emitting diode

A technology of light-emitting diodes and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high cost, difficult control and matching of RGB brightness, etc.

Active Publication Date: 2018-09-28
LIMING VOCATIONAL UNIV
View PDF5 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally red, green and blue RGB white light uses GaAs red light chips combined with nitride semiconductor blue light and green light chips to form RGB white light, but the cost of this method is high, and the brightness of RGB is not easy to control and match, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor white light light-emitting diode
  • Semiconductor white light light-emitting diode
  • Semiconductor white light light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The conventional quantum well 103 has a nitride light-emitting diode with V-pits 104 such as figure 1 As shown, it includes a substrate 100, a first conductivity type semiconductor 101, a dislocation line 102, multiple quantum wells 103, V-pits 104, and a second conductivity type semiconductor 105, wherein the dislocation line passes through the V-pits and quantum well regions .

[0019] The invention discloses a semiconductor white light emitting diode, such as figure 2 As shown, it includes a substrate 100, a semiconductor of the first conductivity type 101, a dislocation line 102, a multiple quantum well 103, a plurality of V-pits 104 formed in the multiple quantum well, a semiconductor of the second conductivity type 105, and an undoped ZnO quantum dots 106, CdS y Se 1-y / ZnO core-shell structure nanopillars 108, ZnS z Se 1-z / ZnO core-shell structure nano-column 109, a plurality of V-pits are composed of multiple groups of first V-pits 104a and second V-pits...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a semiconductor white light light-emitting diode. The semiconductor white light light-emitting diode is characterized in that V-pits comprise first V-pits and second V-pits; the first V-pits comprise non-doped ZnO quantum dots and CdS<y>Se<1-y>/ZnO core-shell structured nanometer columns to give out red light; the second V-pits comprise non-doped ZnO quantum dots and ZnS<z>Se<1-z>/ZnO core-shell structured nanometer columns to give out green light; multiple quantum wells between the first V-pits and the second V-pits give out blue light; and therefore, the white light light-emitting diode mixed by the red light, the green light and the blue light is formed.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a semiconductor white light emitting diode. Background technique [0002] Semiconductor light-emitting diodes have a wide range of adjustable wavelengths, high luminous efficiency, energy saving and environmental protection, long service life of more than 100,000 hours, small size, strong designability and other factors, and have gradually replaced incandescent and fluorescent lamps. Lighting sources, and widely used in new scenarios, such as indoor high-resolution display screens, outdoor display screens, mobile phone TV backlighting, street lights, car lights, flashlights and other applications. However, the material growth quality of nitrides with high In composition is poor, resulting in low luminous efficiency, and it is difficult to form red nitride light emitting diodes. Usually white light-emitting diodes use nitride semiconductor blue light diode lase...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/08
CPCH01L33/06H01L33/08
Inventor 王星河
Owner LIMING VOCATIONAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap