Double-layer gas inlet shower nozzle device of MOCVD (Metal Organic Chemical Vapor Deposition) equipment

Abstract

The invention discloses a double-layer gas inlet shower nozzle device of MOCVD (Metal Organic Chemical Vapor Deposition) equipment, comprising a sealed outer shell in which an upper gas inlet chamber, a lower gas inlet chamber and a water cooling chamber are arranged. The double-layer gas inlet shower nozzle device of the MOCVD equipment is characterized in that a lower gas outlet pipe for realizing communication between the lower gas inlet chamber and a reaction chamber is mounted between the lower gas inlet chamber and the reaction chamber; an upper gas outlet pipe for communicating the upper gas inlet chamber with the lower gas outlet pipe is mounted between the upper gas inlet chamber and the lower gas outlet pipe; the external diameter of the upper gas outlet pipe is less than the internal diameter of the lower gas outlet pipe; and the lower end of the upper gas outlet pipe extends into the lower gas outlet pipe but cannot retract into the lower gas inlet chamber; and a clearance is formed between the upper gas outlet pipe and the lower gas outlet pipe. Two types of reaction gases are premixed in a space between an outlet of the upper gas outlet pipe and an outlet of the lower gas outlet pipe before entering the reaction chamber. The double-layer gas inlet shower nozzle device of the MOCVD equipment disclosed by the invention has the characteristic that different reaction gases are respectively fed into the reaction chamber so that the different reaction gases are sufficiently mixed with little pre-reaction before reaching a substrate; and the crystal quality and the raw material utilization rate during material growth can be improved.

Description

technical field [0001] The invention relates to an inlet nozzle device for MOCVD equipment, in particular to a double-layer inlet nozzle device for MOCVD equipment with double-layer inlet and pre-mixing features. Background technique [0002] Metal organic chemical vapor deposition equipment (MOCVD) is an important equipment for the preparation of semiconductor materials, especially in the preparation of superlattices, quantum wells, etc. It has obvious advantages, and has been used in large-scale production in the optoelectronics industry. When MOCVD grows materials, different reaction gases need to be sent into the reaction chamber through different pipes. In order to ensure the uniformity of the gas flow field, the gas is required to flow through the nozzle hole at a high speed, generally at a speed of 3m / s, and the distance from the nozzle hole to the substrate is generally controlled between 10mm and 20mm. In this case, after the two gases are ejected, they have reache...

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Problems solved by technology

In this case, after the two gases are ejected, they have reached the surface of the substrate before they are fully mixed, so it has an adverse effect on the growth rate of the material, the quality of crystallization and the utilization rate of raw materials.

In order to solve this problem, there are usually the following methods: The first method is to increase the distance from the nozzle hole to the substrate to allow time for the different gases to fully mix, but this will affect the stability of the gas flow field , it is likely to form turbulent flow; in addition, the increase of the distance between the nozzle hole and the substrate means that the time for the gas to run in the high temperature area is prolonged, which greatly increases the pre-reaction between the gases, which has a negative impact on the growth; the second The first method is to reduce the distance between the two nozzle holes to make it easier for the two gases to diffuse laterally, so as to achieve the purpose of mixing evenly. However, the current drilling technology limits the distance between the holes cannot be very close (currently generally 5mm), so it is also very difficult. Difficult to achieve

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