Substrate material for mercury cadmium telluride material growth by liquid phase epitaxy method and preparation thereof

Abstract

The invention relates to a substrate material used for the growth of a mercury cadmium telluride material by a liquid phase epitaxy method. On the basis of the prior substrate material, a layer of cadmium zinc telluride single-crystal film completely matched with the lattice constant of mercury cadmium telluride is grown. The substrate material of the invention has the advantages that an epitaxial film has high lattice quality, and compositions can be flexibly adjusted according to the lattice constants of short wave, medium wave and long wave mercury cadmium telluride materials; meanwhile, the cadmium zinc telluride film has even compositions; the method adopts mature process, and has the advantages of simpler process equipment, short process cycle and low cost; and the substrate material with large area, high quality and high composition evenness can be provided for an infrared focal plane detector.

Description

technical field [0001] The invention relates to a substrate material and a preparation method for infrared detection materials, in particular to a substrate material and a preparation method for growing mercury cadmium telluride materials by a liquid phase epitaxy method. Background technique [0002] Mercury cadmium telluride infrared focal plane detectors are widely used in early warning detection, intelligence reconnaissance, damage effect assessment, investigation, development and management of agriculture and animal husbandry, forest resources, weather forecast, geothermal distribution, earthquake, volcanic activity, space astronomical detection and other military and the civil sphere. With the development of infrared technology, the scale of HgCdTe detector array continues to expand, and the pursuit of higher performance of the detector has been pursued. Therefore, the size and performance of HgCdTe material as the core material of the detector have been put forward hi...

AI Technical Summary

Problems solved by technology

However, due to the physical and chemical characteristics of CdZnTe itself, the size, performance and yield of CdZnTe single crystal grown by the above crystal technology are very low.

In addition, although it is theoretically possible to obtain substrates with different components by adjusting the crystal material formula to achieve a good match between the lattice constant of CdZnTe and the HgCdTe material, the Zn component has Obvious segregation effect, it is very difficult to obtain a CdZnTe substrate with uniform composition in a large area

[0006] Alternative composite substrate materials are also mainly achieved through Si, Ge or Al 2 o 3 CdTe single crystal thin film is grown on the substrate to be used as the substrate for HgCdTe epitaxy. Although large area and low cost can be achieved, the fixed lattice constant of CdTe is relatively compatible with different components of HgCdTe materials. Inferior to CdZnTe

Images