Heteroepitaxial growth method for high-quality monocrystalline thick-film material

A heteroepitaxial and epitaxial growth technology, applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve problems such as complex processing technology
CN101962803AActive Publication Date: 2011-02-02DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
Publication Date
2011-02-02

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Abstract

The invention discloses a heteroepitaxial growth method for a high-quality monocrystalline thick-film material, which comprises the following steps of: pretreating a substrate; in the first stage, gradually modulating to effectively release stress, wherein process parameters are gradually changed to a stress release growth condition from a high quality growth condition; in the second stage, gradually modulating to improve the quality of an epitaxial material; continuously repeating the first stage and the second stage in a periodic modulation mode; stopping growth when the material is grown to reach the preset thickness; and taking the material growth effect as feedback, regulating a quality modulating amplitude parameter, and determining the growth condition of the material next time. The heteroepitaxial growth method solves two main problems of heteroepitaxial growth of the material, achieves the improvement of the quality of the material and the effective release of the stress, introduces a control parameter, namely the quality modulating amplitude, realizes the effective control of the quality and stress, and can well realize the heteroepitaxial growth of the high-quality monocrystalline thick-film material.
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Description

technical field

[0001] The invention relates to the field of heterogeneous epitaxial growth of materials, in particular to the epitaxial growth of high-quality GaN single crystal thick film material on sapphire by HVPE method. Background technique

[0002] In contemporary society, microelectronic devices and optoelectronic devices have been widely used in all aspects of modern technology, national economy and daily life. These various semiconductor devices are closely related to the epitaxy technology of materials.

[0003] The epitaxy of materials mainly refers to the growth of a crystal film with the same or similar structure as the substrate material on a single crystal substrate. According to whether the epitaxial layer is the same as the substrate material, the epitaxy of materials can be divided into two types: homoepitaxial and heteroepitaxial. Heteroepitaxial technology is an important method for preparing semiconductor materials and an important way to develop new ...

Claims

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