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Heteroepitaxial growth method for high-quality monocrystalline thick-film material

A heteroepitaxial and epitaxial growth technology, applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve problems such as complex processing technology

Active Publication Date: 2011-02-02
DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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Problems solved by technology

However, the disadvantage of the pattern mask process is its relatively complicated processing technology.

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  • Heteroepitaxial growth method for high-quality monocrystalline thick-film material
  • Heteroepitaxial growth method for high-quality monocrystalline thick-film material
  • Heteroepitaxial growth method for high-quality monocrystalline thick-film material

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[0030] The method for heteroepitaxial growth of high-quality single-crystal thick-film materials of the present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0031] The design scheme of the present invention is as figure 1 As shown, "gradual modulation" refers to the gradual change of basic process parameters such as temperature, pressure, reaction gas flow rate or reactant concentration and their combinations. The material quality is stable, and at the same time, this gradual change can gradually implement the control of stress release in the epitaxial process. In addition, if the gradual change process follows a certain change function, such as a linear function, then the epitaxy process can be quantified and regularized, which increases the quantitative controllability of the epitaxy process.

[0032] Such as figure 1 As shown, the gradual change process from high-quality growth conditions to stress-rel...

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Abstract

The invention discloses a heteroepitaxial growth method for a high-quality monocrystalline thick-film material, which comprises the following steps of: pretreating a substrate; in the first stage, gradually modulating to effectively release stress, wherein process parameters are gradually changed to a stress release growth condition from a high quality growth condition; in the second stage, gradually modulating to improve the quality of an epitaxial material; continuously repeating the first stage and the second stage in a periodic modulation mode; stopping growth when the material is grown to reach the preset thickness; and taking the material growth effect as feedback, regulating a quality modulating amplitude parameter, and determining the growth condition of the material next time. The heteroepitaxial growth method solves two main problems of heteroepitaxial growth of the material, achieves the improvement of the quality of the material and the effective release of the stress, introduces a control parameter, namely the quality modulating amplitude, realizes the effective control of the quality and stress, and can well realize the heteroepitaxial growth of the high-quality monocrystalline thick-film material.

Description

technical field [0001] The invention relates to the field of heterogeneous epitaxial growth of materials, in particular to the epitaxial growth of high-quality GaN single crystal thick film material on sapphire by HVPE method. Background technique [0002] In contemporary society, microelectronic devices and optoelectronic devices have been widely used in all aspects of modern technology, national economy and daily life. These various semiconductor devices are closely related to the epitaxy technology of materials. [0003] The epitaxy of materials mainly refers to the growth of a crystal film with the same or similar structure as the substrate material on a single crystal substrate. According to whether the epitaxial layer is the same as the substrate material, the epitaxy of materials can be divided into two types: homoepitaxial and heteroepitaxial. Heteroepitaxial technology is an important method for preparing semiconductor materials and an important way to develop new ...

Claims

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Application Information

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IPC IPC(8): C30B25/18C30B25/16
Inventor 杜彦浩吴洁君张国义于彤军杨志坚康香宁贾传宇孙永健罗伟科刘鹏
Owner DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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