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Monolithic integrated non-refrigerated infrared/ultraviolet double-color detector and manufacture method thereof

An uncooled infrared and two-color detector technology, which is applied in the field of photoelectric detectors, can solve the problems of bulky refrigeration systems and the difficulty of realizing low-cost portable system requirements, so as to reduce the size of devices, improve the probability of detection and identification, and reduce processing costs. cost effect

Active Publication Date: 2009-11-25
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since low-temperature refrigeration is necessary to obtain high-performance system applications, it needs to be equipped with a bulky and expensive refrigeration system for application, and it is difficult to achieve low-cost portable system requirements

Method used

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  • Monolithic integrated non-refrigerated infrared/ultraviolet double-color detector and manufacture method thereof
  • Monolithic integrated non-refrigerated infrared/ultraviolet double-color detector and manufacture method thereof
  • Monolithic integrated non-refrigerated infrared/ultraviolet double-color detector and manufacture method thereof

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Embodiment 1

[0020] This embodiment is a specific manufacturing process of a BST / GaN uncooled monolithic integrated infrared / ultraviolet dual-color detector. The infrared / ultraviolet dual-color detector manufactured by using this method and material has the following characteristics: figure 2 For the structure shown, the specific steps are as follows:

[0021] 1) Firstly, the basic material structure is grown, and a 1.5μm GaN buffer layer and a 2μm non-doped GaN ultraviolet absorption layer (Si doping concentration is 1×10) are grown on a sapphire substrate with MOCVD system. 16 cm-3); 2μm porous silica grown by gel sol method and 200nm SiNx grown by PECVD as isolation layer; Pt / Ti deposited by magnetron sputtering system, 30nm Pt / 100nm Ti composite metal film as infrared detection Bottom electrode of the detector; use a magnetron sputtering system to deposit barium strontium titanate (BST) film with a thickness of 500nm and a temperature of 700℃; then use conventional semiconductor photolith...

Embodiment 2

[0031] This embodiment is a specific manufacturing process of a VOx / GaN uncooled monolithic integrated infrared / ultraviolet dual-color detector. The infrared / ultraviolet dual-color detector manufactured by using this method and materials has the following characteristics: image 3 For the structure shown, the specific steps are as follows:

[0032] 1) On a sapphire substrate, a 1.5μm GaN buffer layer and a 2μm non-doped GaN ultraviolet absorption layer (Si doping concentration is 1×10 16 cm-3), such as Figure 5a Shown

[0033] 2) Use PECVD to grow 2.5μm thick porous structure SiO2 as the sacrificial layer, such as Figure 5b Shown

[0034] 3) Photoetch the support leg pattern of the bridge deck, and remove the SiO2 at the support leg position by reactive ion etching, such as Figure 5c Shown

[0035] 4) PECVD growth of 0.5μm Si3N5 bridge support layer, such as Figure 5d Shown

[0036] 5) Use magnetron sputtering to grow 50nm VOx film; use photoresist to mask and etch sensitive el...

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Abstract

The invention discloses a monolithic integrated non-refrigerated infrared / ultraviolet double-color detector and a manufacture method thereof, belonging to the field of photoelectric detectors. The detector comprises a substrate, an ultraviolet sensitive thin film structure and an infrared sensitive thin film structure thereof are integrated on the same substrate material; a cushion layer, an ultraviolet sensitive layer, an isolation layer and an infrared detecting structure are sequentially arranged on the substrate upwardly. In the invention, SiC, GaN series or AlxGa1-xN series of the broad-band gap high-temperature semiconductor ultraviolet sensitive thin film structure and ferro-electricity, vanadium oxide or amorphous silicon of the non-refrigerated infrared sensitive thin film structure grow on the same substrate, and a relative simple material growth method and processing process are adopted to realize the monolithic integration of the non-refrigerated infrared / ultraviolet double-color detector so as to develop the range of a response spectrum, and improve the detection and identification probability of a target; in the application, the invention has no requirement for low temperature, and reduces the volume of parts and the production cost.

Description

Technical field [0001] The invention relates to a photoelectric detector, in particular to a monolithic integrated uncooled infrared / ultraviolet two-color detector and a manufacturing method thereof. Background technique [0002] Infrared / ultraviolet (IR / UV) dual-color detector dual-color detection technology can obtain information in both ultraviolet and infrared bands, which can enhance the ability to recognize targets and reduce the false alarm rate. It is one of the current research hotspots in the development of detection technology. Forest fire monitoring, indoor and outdoor fire protection and safety monitoring have important application prospects. The current general technical solution is to simply combine two sets of independent infrared detectors and ultraviolet detectors to form an infrared / ultraviolet dual-color detector, which is complex in packaging, large in size and high in cost; recently, a heterostructure based on GaN / AlGaN has been reported. Material system mon...

Claims

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Application Information

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IPC IPC(8): G01J5/10H01L27/144H01L21/82B81B7/02B81C1/00
Inventor 李献杰赵永林蔡道民齐丽芳曾庆明李言荣吴传贵张万里
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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