Method for manufacturing high-resistance GaN thin film

Abstract

The invention discloses a high-resistance GaN thin film and a method for manufacturing the high-resistance GaN thin film. The high-resistance GaN thin film comprises a substrate, a GaN low-temperature nucleating layer and a GaN high-resistance layer, wherein the GaN low-temperature nucleating layer is manufactured on the substrate, and the GaN high-resistance layer is manufactured on the GaN low-temperature nucleating layer. The high-resistance GaN thin film grows through MOCVD equipment, with trimethyl gallium and ammonia gas used as a gallium source and a nitrogen source, and with hydrogen used as carrier gas; the growth temperature of the GaN low-temperature nucleating layer is 550 DEG C, the pressure of a reaction chamber for the GaN low-temperature nucleating layer is 200 Torr, and the thickness of the GaN low-temperature nucleating layer ranges from 0.2 micrometer to 0.3 micrometer; the growth temperature of the GaN high-resistance layer is 1040 DEG C, the pressure of a reaction chamber for the GaN high-resistance layer is 50 Torr, and the thickness of the GaN high-resistance layer is 2 micrometers. According to the high-resistance GaN thin film, by controlling the pressure of the reaction chambers in the material growth process and controlling merging of carbon atoms in reaction precursors TMGa, carbon impurities are imported to acquire acceptor levels under the condition that a carbon source is not independently added, and background carrier concentration is compensated for.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a preparation method of Gaozu GaH. Background technique [0002] In recent years, with the rise and rapid development of third-generation wireless communications and military phased array radars, high-power microwave devices such as high electron mobility transistors (HEMTs) have received extensive attention and research. GaN has excellent characteristics such as large band gap, high breakdown electric field, high electron saturation drift velocity, strong radiation resistance and good chemical stability; and it can form a heterojunction with AlGaN materials, and the pressure on the heterojunction interface Electric and spontaneous polarization can generate a high concentration of two-dimensional electron gas (2DEG), which is an excellent choice for fabricating HEMT devices. [0003] A basic HEMT device should have the following layers: substrate, nucleation laye...

AI Technical Summary

Problems solved by technology

However, these technologies have their own shortcomings, such as causing reaction chamber poll

Images