Super-radiation light emitting diode

A technology of superluminescence and diodes, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as low polarization, breakthroughs, and reliability problems that are difficult to solve, so as to improve device characteristics, increase injection efficiency, and ensure reliability. sex high effect

Inactive Publication Date: 2008-06-11
GUANGXUN SCI & TECH WUHAN
View PDF0 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, the low polarization SLD adopts the quantum well structure. To realize the low polarization degree of this kind of device, it is difficult to make a breakthrough in technology, especially in terms of reliability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Super-radiation light emitting diode
  • Super-radiation light emitting diode
  • Super-radiation light emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The superluminescent light-emitting diode of the present invention will be described in detail below in conjunction with the embodiments.

[0035] The basic background principle of the superluminescent light-emitting diode device is as follows: In terms of wavelength, the SLD near 0.85 microns (μm) adopts the material system of aluminum gallium arsenide / gallium arsenic (AlGaAs / GaAs), and the material system of 1.3 μm and 1.55 μm adopts InGaAs / P Indium phosphide (InGaAsP / InP) or aluminum gallium indium arsenic / indium phosphide (AlGaInAs / InP) material system. The basic working principle of the device is as follows: Under the condition of current injection, p-layer holes and n-layer electrons recombine and emit light in the light-emitting layer; according to the thickness of the light-emitting layer, the device can be divided into bulk material and quantum well SLD, and the waveguide structure adopts double-groove plane Buried (DC-PBH) or ridge waveguide (RWG) structure; o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a super radiation luminescent diode, having a material growth part comprising a substrate, a lower cladding, a lower separate confinement layer, an active region, an upper separate confinement layer, an upper cladding, a optical confinement layer and an ohmic contact layer in sequence; a P-typed electrode layer is formed through an insulation medium layer above the ohmic contact layer and a N-typed electrode layer formed under the substrate; the active region positioned between the lower separate confinement layer and the upper separate confinement layer adopts body material structure, and the luminescent wavelength range of the active region is from 0.85 to 1.7um. The invention achieves low polarization design by combining the material active region design and waveguide structure, having the advantages of simple technique and high reliability. The invention can be applied to the wavelength range of 0.85 to 1.7um. The invention adopts ridge-waveguide structure to reduce the series resistance, increase injection efficiency, and thus improving device characteristics. The invention adopts tilted waveguide; after the waveguide is bent, the high anti-reflective film demand can be reduced by one to two orders of magnitude, and advantageous to realize super luminescent diode with low ripple coefficient.

Description

technical field [0001] The invention relates to a superluminescent light emitting diode. In particular, it relates to a low-polarization superluminescent light-emitting diode that can improve polarization characteristics, thereby improving device characteristics, and is beneficial to realizing a low ripple coefficient index. Background technique [0002] Compared with lasers, superluminescent light-emitting diodes (SLDs) have a wider spectral range and higher output power than light-emitting diodes (LEDs). Generally, superluminescent light emitting diodes can be roughly divided into high polarization superluminescent light emitting diodes and low polarization superluminescent light emitting diodes from the perspective of polarization. Among them, low polarization superluminescent light emitting diodes are a new type of optoelectronics The device is an optoelectronic device that is more difficult and more complex than ordinary superluminescent light-emitting diodes, and is m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/14
Inventor 张军常进黄晓东李林松
Owner GUANGXUN SCI & TECH WUHAN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap