Super-radiation light emitting diode

Abstract

The invention discloses a super radiation luminescent diode, having a material growth part comprising a substrate, a lower cladding, a lower separate confinement layer, an active region, an upper separate confinement layer, an upper cladding, a optical confinement layer and an ohmic contact layer in sequence; a P-typed electrode layer is formed through an insulation medium layer above the ohmic contact layer and a N-typed electrode layer formed under the substrate; the active region positioned between the lower separate confinement layer and the upper separate confinement layer adopts body material structure, and the luminescent wavelength range of the active region is from 0.85 to 1.7um. The invention achieves low polarization design by combining the material active region design and waveguide structure, having the advantages of simple technique and high reliability. The invention can be applied to the wavelength range of 0.85 to 1.7um. The invention adopts ridge-waveguide structure to reduce the series resistance, increase injection efficiency, and thus improving device characteristics. The invention adopts tilted waveguide; after the waveguide is bent, the high anti-reflective film demand can be reduced by one to two orders of magnitude, and advantageous to realize super luminescent diode with low ripple coefficient.

Description

technical field [0001] The invention relates to a superluminescent light emitting diode. In particular, it relates to a low-polarization superluminescent light-emitting diode that can improve polarization characteristics, thereby improving device characteristics, and is beneficial to realizing a low ripple coefficient index. Background technique [0002] Compared with lasers, superluminescent light-emitting diodes (SLDs) have a wider spectral range and higher output power than light-emitting diodes (LEDs). Generally, superluminescent light emitting diodes can be roughly divided into high polarization superluminescent light emitting diodes and low polarization superluminescent light emitting diodes from the perspective of polarization. Among them, low polarization superluminescent light emitting diodes are a new type of optoelectronics The device is an optoelectronic device that is more difficult and more complex than ordinary superluminescent light-emitting diodes, and is m...

AI Technical Summary

Problems solved by technology

[0006] At present, the low polarization SLD adopts the quantum well structure. To realize the low polarization degree of this kind of device, it is difficult to make a breakthrough in technology, especially in terms of reliability.

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