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Gainp/gaas/ge/ge four-junction solar cell and preparation method thereof

A technology of solar cells and sub-cells, applied in the field of solar cells, can solve problems such as insufficient energy conversion and utilization

Active Publication Date: 2015-12-16
苏州市吴中中科育成科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The Ge battery in the triple-junction battery covers a wider spectrum, and its short-circuit current can reach more than twice that of the other two-junction batteries. Due to the constraints of the series connection of the three-junction batteries, the energy of the solar spectrum corresponding to the Ge battery is not fully converted and utilized. , so there is still room for improvement in the efficiency of the triple-junction cell

Method used

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  • Gainp/gaas/ge/ge four-junction solar cell and preparation method thereof
  • Gainp/gaas/ge/ge four-junction solar cell and preparation method thereof
  • Gainp/gaas/ge/ge four-junction solar cell and preparation method thereof

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no. 1 Embodiment approach

[0021] figure 1 The first embodiment of a GaInP / GaAs / Ge / Ge four-junction solar cell with a buffer layer is shown.

[0022] figure 2 Shown is a schematic diagram of the product structure of a first embodiment of a GaInP / GaAs / Ge / Ge four-junction solar cell.

[0023] image 3 Shown is a schematic diagram of a first embodiment of a GaInP / GaAs / Ge / Ge four-junction solar cell without a buffer layer.

[0024] This embodiment provides a GaInP / GaAs / Ge / Ge four-junction solar cell grown in a front-mounting manner, and the band gap combination is 1.90eV / 1.42eV / 0.67eV / 0.67eV. The structure of the GaInP / GaAs / Ge / Ge four-junction solar cell is as follows image 3 As shown, it includes a Ge substrate layer 30, and a first Ge sub-cell 31, a first tunnel junction 32, a second Ge sub-cell 33, a second tunnel junction 34, and GaAs sequentially arranged on the Ge substrate layer 30 The sub-cell 35, the third tunnel junction 36, the GaInP sub-cell 37, and the contact layer 29 of (In)GaAs or Ge.

[0025] Am...

no. 2 Embodiment approach

[0051] This embodiment provides a method for preparing a GaInP / GaAs / Ge / Ge four-junction solar cell by adopting a front mounting method, such as Figure 4 Shown, including:

[0052] Step 401, providing a Ge substrate layer;

[0053] Step 402, growing a first Ge sub-cell on the surface of the Ge substrate layer;

[0054] Step 403, growing a first tunnel junction on the surface of the first Ge sub-cell;

[0055] Step 404, growing a second Ge sub-cell on the surface of the first tunnel junction;

[0056] Step 405, growing a second tunnel junction on the surface of the second Ge sub-cell;

[0057] Step 406, growing a GaAs sub-cell on the surface of the second tunnel junction;

[0058] Step 407, growing a third tunnel junction on the surface of the GaAs sub-cell;

[0059] Step 408, growing a GaInP sub-cell on the surface of the third tunnel junction;

[0060] In step 409, a contact layer is grown on the surface of the GaInP sub-cell.

[0061] The above steps all adopt MOCVD (MetalOrganicChemicalV...

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Abstract

The invention provides a GaInP / GaAs / Ge / Ge four-junction solar cell, comprising a Ge substrate layer, wherein a first Ge sub cell, a first tunnel junction, a second Ge sub cell, a second tunnel junction, a GaAs sub cell, a third tunnel junction, a GaInP sub cell and a contact layer of (In) / GaAs or Ge are arranged on the Ge substrate in sequence. The invention also provides a preparation method for the GaInP / GaAs / Ge / Ge four-junction solar cell. The preparation method comprises the following steps: 1, the Ge substrate layer is provided; 2, the first Ge sub cell is grown on the surface of the Ge substrate layer; 3, the first tunnel junction is grown on the surface of the first Ge sub cell; 4, the second Ge sub cell is grown on the surface of the first tunnel junction; 5, the second tunnel junction is grown on the surface of the second Ge sub cell; 6, the GaAs sub cell is grown on the surface of the second tunnel junction; 7, the third tunnel junction is grown on the surface of the GaAs sub cell; 8, the GaInP sub cell is grown on the surface of the third tunnel junction; and 9, the contact layer is grown on the surface of the GaInP sub cell.

Description

Technical field [0001] The invention relates to the field of solar cells, in particular to a GaInP / GaAs / Ge / Ge four-junction solar cell and a preparation method thereof. Background technique [0002] In the field of solar cells, how to achieve full absorption of the full spectrum of the sun, increase the efficiency of photo-generated carriers, and promote electron-hole separation, has always been the core key issue for improving the efficiency of solar cells. The current solar cell structure design is basically based on the following two considerations: One is to give priority to lattice matching and place photocurrent matching in a secondary position. However, the lattice-matched battery structure limits the photocurrent matching of the solar cell due to its certain band gap energy, making it impossible to achieve full-spectrum absorption and utilization of sunlight. The second is to give priority to the photocurrent matching of the multi-junction structure and adopt the growth ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0687H01L31/18
CPCY02E10/544Y02P70/50
Inventor 赵勇明董建荣李奎龙孙玉润于淑珍杨辉
Owner 苏州市吴中中科育成科技发展有限公司
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