Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for controlling N-type 4H-SiC homogenous epitaxial doping

A technology of homoepitaxy and control methods, applied in the directions of diffusion/doping, chemical instruments and methods, from chemically reactive gases, etc., to achieve the effect of simplifying the preparation process, reducing defects, and improving device performance

Inactive Publication Date: 2013-12-04
XIDIAN UNIV
View PDF2 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to propose an N-type 4H-SiC homoepitaxial doping control method to prepare epitaxial layers with different doping concentrations by controlling the pressure of the reaction chamber in view of the deficiencies of the above-mentioned prior art. Solved the technical problem that N-type 4H-SiC homoepitaxial doping is difficult to control

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for controlling N-type 4H-SiC homogenous epitaxial doping
  • Method for controlling N-type 4H-SiC homogenous epitaxial doping

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Step 1, placing the silicon carbide substrate into the reaction chamber of the silicon carbide CVD equipment.

[0027] (1.1) Selection bias A 4H silicon carbide substrate with a crystal orientation of 8° is placed in the reaction chamber of the silicon carbide CVD equipment;

[0028] (1.2) Vacuumize the reaction chamber until the pressure in the reaction chamber is lower than 1×10 -7 mbar.

[0029] Step 2, heating the reaction chamber in the hydrogen flow.

[0030] (2.1) Open the hydrogen switch leading to the reaction chamber, and control the hydrogen flow to gradually increase to 80L / min;

[0031] (2.2) Turn on the vacuum pump to extract the gas in the reaction chamber, and keep the reaction chamber pressure at 300mbar;

[0032] (2.3) Gradually increase the power of the heating source to slowly increase the temperature of the reaction chamber. When the temperature exceeds 1400°C, add C with a flow rate of 5mL / min into the hydrogen flow. 3 h 8 .

[0033] Step 3...

Embodiment 2

[0049] Step 1, choose the direction The 4H silicon carbide substrate with a crystal orientation of 8° is placed in the reaction chamber of the silicon carbide CVD equipment; the reaction chamber is evacuated until the pressure of the reaction chamber is lower than 1×10 -7 mbar.

[0050] Step 2, open the H to the reaction chamber 2 Switch, control the hydrogen flow to gradually increase to 80L / min, and at the same time turn on the vacuum pump to extract the gas in the reaction chamber, keeping the pressure of the reaction chamber at 500mbar; gradually increase the power of the RF heating source to slowly increase the temperature of the reaction chamber, when the temperature of the reaction chamber After reaching 1400°C, add C with a flow rate of 7mL / min into the hydrogen flow 3 h 8 .

[0051] Step 3, when the temperature of the reaction chamber reaches 1580°C, keep the temperature of the reaction chamber constant, and keep the flow rate of 80L / min H 2 and C at a flow rate o...

Embodiment 3

[0056] The first step is to choose a bias The 4H silicon carbide substrate with a crystal orientation of 8° is placed in the reaction chamber of the silicon carbide CVD equipment; the reaction chamber is evacuated until the pressure of the reaction chamber is lower than 1×10 -7 mbar.

[0057] In the second step, open the H to the reaction chamber 2 Switch, control the hydrogen flow to gradually increase to 80L / min, and at the same time turn on the vacuum pump to extract the gas in the reaction chamber, keeping the pressure of the reaction chamber at 700mbar; gradually increase the power of the RF heating source to slowly increase the temperature of the reaction chamber, when the temperature of the reaction chamber After reaching 1400°C, add C with a flow rate of 10mL / min into the hydrogen flow 3 h 8

[0058] In the third step, the substrate is etched in situ.

[0059] (3.1) When the reaction chamber temperature reaches 1600°C, keep the reaction chamber temperature consta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for controlling N-type 4H-SiC homogenous epitaxial doping. The method includes steps of placing silicon carbide substrates into a reaction chamber; heating the reaction chamber in hydrogen stream; adding C<3>H<8> into the hydrogen stream after the temperature of the reaction chamber reaches 1400 DEG C; performing in-situ etching on the substrates for 10-30 minutes after the temperature of the reaction chamber reaches 1580 DEG C; keeping the temperature of the reaction chamber at the temperature of 1580 DEG C, keeping the pressure of the reaction chamber within the range of 300mbar-700mbar, adding SiH<4> at a flow rate of 15-24mL / min, C<3>H<8> at a flow rate of 5-10mL / min and N<2> at a flow rate of 2L / min into the hydrogen stream at a rate of 80L / min and growing epitaxial layers; cooling the silicon carbide substrates in the hydrogen stream after the epitaxial layers complete growing; filling argon into the reaction chamber until the pressure of the reaction chamber reaches the normal pressure. The method has the advantages that only the pressure of the reaction chamber is changed, operation is simple and convenient, and the manufactured silicon carbide epitaxial layers are doped uniformly, have smooth surfaces and can be used for manufacturing silicon carbide devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to an N-type 4H-SiC homoepitaxial doping control method, and the grown epitaxial layer can be used for SiC device manufacturing. Background technique [0002] SiC has the advantages of wide band gap, high critical breakdown field strength, high thermal conductivity, high saturated electron drift velocity and high bonding energy. The main material of "extreme electronic devices" and MEMS under extreme conditions; in addition, SiC is an excellent light-emitting semiconductor material, which is not only suitable for making optoelectronic semiconductor devices, but also can be made by taking advantage of its wide band gap and low current characteristics UV sensitive devices. Due to these superior characteristics of SiC materials, it has broad application prospects in chemical industry, aerospace engineering, automobile manufacturing, mineral processing and m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B25/02C30B25/20C30B31/06
Inventor 王悦湖孙哲张玉明贾仁需张义门
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com