4results about How to "Lattice integrity" patented technology

The invention relates to the technical field of new energy, and discloses a preparation method of a high-capacity high-magnification polycrystalline ternary positive electrode material, which comprises the following steps: mixing a nickel-cobalt-manganese precursor with a dopant A and a lithium source, carrying out primary sintering to obtain a primary sintering material, crushing the primary sintering material, mixing with a coating agent B and a coating agent C, and carrying out secondary sintering to obtain the high-capacity high-magnification polycrystalline ternary positive electrode material. In the primary sintering process, a first heat preservation platform, a second heat preservation platform and a third heat preservation platform are included, the temperature of the first heat preservation platform ranges from 660 DEG C to 700 DEG C, the heat preservation time ranges from 1.5 h to 2.5 h, the temperature of the second heat preservation platform ranges from 850 DEG C to 900 DEG C, the heat preservation time ranges from 1.5 h to 2.5 h, the temperature of the third heat preservation platform ranges from 750 DEG C to 790 DEG C, and the heat preservation time ranges from 4 h to 6 h. Through the design, the capacity and the cycle performance of the ternary positive electrode material are obviously improved. The invention further discloses the high-capacity and high-rate polycrystalline ternary positive electrode material and a battery.

The application discloses a modified non-woven fabric and a preparation method thereof. The method is characterized in that graphene oxide and graphene are prepared into a mixed multi-layer graphene spraying liquid through ultrasonic intercalation, and then the mixed multi-layer graphene spraying liquid is adhered to a non-woven fabric through a spraying process to modify the non-woven fabric. The modified non-woven fabric is not easy to fall off, is stable in structure, can effectively avoid tearing of fibers of the non-woven fabric in a stretching process, and improves the overall breaking strength of the non-woven fabric.

The preparation method of the n-type semiconductor diamond material of the present invention includes the following process steps: (1) pretreatment of single crystal diamond to remove impurities on the surface of single crystal diamond; (2) preparation of doped blank, wherein the pretreated single crystal diamond is placed in n-type doped elemental powder or compound powder and molded, or the n-type doped elemental powder or compound powder is placed in a foil or inorganic non-metallic material container and then the pretreated single crystal diamond is placed in n-type doped elemental powder or compound powder and molded; (3) the doped blank is placed in a static high pressure device and thermal diffusion doping is carried out under a determined doping pressure and doping temperature. After the thermal diffusion doping is completed, the encapsulating material and impurities on the surface of the doped diamond are cleaned and dried to obtain an n-type semiconductor diamond material with complete crystal lattice, high doping concentration and excellent performance.

The invention relates to the technical field of batteries, and discloses a preparation method of a lithium nickel manganese oxide positive electrode active material, a battery monomer, a battery device and a power utilization device. The lithium nickel manganese oxide positive electrode active material in the battery monomer comprises a substrate and a coating layer arranged on the surface of the substrate; the matrix comprises single-crystal lithium nickel manganese oxide, the single-crystal lithium nickel manganese oxide is a flaky particle, the length of the flaky particle is 1-5 [mu] m, the width is 1-5 [mu] m, and the thickness is 0.25-1 [mu] m; the coating layer comprises lithium-based oxysalt and / or oxide containing an M element, and the M element is selected from one or more of silicon, boron, aluminum and titanium; in the matrix surface layer, the content of the M element is less than or equal to 100 ppm; wherein the substrate surface layer refers to an area which vertically extends 200nm from the surface of the substrate to the interior of the substrate. The battery monomer provided by the embodiment of the invention has relatively high rate capability and relatively good cycle performance.