Method for preparing single crystal wide-band gradient LED phosphor

A phosphor and gradient technology, which is applied in the field of LED solid-state lighting systems, can solve problems affecting the photoelectric conversion rate of broad-spectrum gradient phosphor quality and industrial production, application limitations, and difficulty in controlling the size of single crystal grains.
CN107794034AInactive Publication Date: 2018-03-13HUNAN SCI & TECH RES & DEV CENT

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
HUNAN SCI & TECH RES & DEV CENT
Publication Date
2018-03-13
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a method for preparing single crystal wide-band gradient LED phosphor. The method comprises preparing multiple types of pure-phase nanometer fluorescent powder with the same crystal structure and different compositions through a homogenous precipitation method, adding a dispersant, an adhesive and a fluxing agent into the nanometer fluorescent powder, preparing size-controllable spherical particles with different sizes through a granulation method, preparing spherical nano-aggregates with mesoporous structures through a rapid sintering process, carrying out sintering at a high temperature to obtain size-controllable single-crystal phosphor seed crystals, mixing micron-level phosphor crystals as seeds and the pure-phase nanometer fluorescent materials with the samestructure and different compositions, and orderly carrying out epitaxial growth at a high temperature step by step to obtain wide-band gradient LED phosphor. The wide-band gradient LED phosphor has controllable sizes, good dispersity, complete crystal lattice, high packing density, emission frequency wider than that of general phosphor, large scattering intensity and high luminous efficiency.
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Description

technical field

[0001] The invention relates to an LED solid-state lighting system and its application, in particular to a manufacturing method of a single crystal grain LED broadband gradient fluorescent powder. Background technique

[0002] Since Nick Holonyak Jr. of General Electric Company developed the first practical visible light-emitting diode LED in 1962, especially the breakthrough of the third-generation semiconductor material GaN technology in the late 1990s triggered Since the third revolution in the field of lighting, after 50 years of development, LED has small size, high brightness, low power consumption (1 / 8 to 1 / 10 of incandescent bulbs, 1 / 2 of energy-saving fluorescent lamps), long life Long (more than 120,000 hours), high efficiency, low heat, environmental protection (no Hg, Pb and other pollution), low-voltage low-current start-up, fast response, shock and impact resistance, planar packaging, easy to develop into ultra-thin and short products and other ...

Claims

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