A kind of horizontal growth device and growth method of phosphorus silicon cadmium single crystal

A growth device and a technology for crystal nucleus growth, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of increased cost and easy volatilization of the gold-plated layer.
CN104047047BActive Publication Date: 2017-03-15北京雷生强式科技有限责任公司 +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
北京雷生强式科技有限责任公司
Publication Date
2017-03-15

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Abstract

The invention discloses a horizontal growth device and growth method of a phosphorus silicon cadmium mono-crystal, belonging to the technical field of phosphorus silicon cadmium mono-crystal preparation. The device comprises an outer layer quartz tube, an inner layer quartz tube sleeved in the outer layer quartz tube, and a PBN boat-shaped crucible sleeved in the inner layer quartz tube, wherein the PBN boat-shaped crucible comprises a crystal nucleus growth section, a transition section and a mono-crystal growth section which are connected with one another in sequence; a first end part of the crystal nucleus growth section is set to be spire-shaped so as to improve the uniformity of crystal orientation in spontaneous nucleation. By virtue of the design of a double-layer quartz tube, inert gas is introduced between the quartz tubes, so that the problems of tube explosion extremely easily generated in the crystal growth process can be solved, and the stability of a thermal field and the durability of the growth device can be improved. The method is used for preparing the phosphorus silicon cadmium mono-crystal on a horizontal crystal growth furnace with the growth device by using a horizontal gradient freezing method so as to ensure a more stable crystallization process and reduce the defects of parasitic nucleation; the method is beneficial for obtaining a CSP mono-crystal with good mono-crystal performance and complete crystal lattice, and is simple in operation, easy in control and low in cost.
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Description

technical field

[0001] The invention relates to the technical field of cadmium phosphorus silicon single crystal preparation, in particular to a horizontal growth device and a growth method of a phosphorus silicon cadmium single crystal. Background technique

[0002] Cadmium silicon phosphorus (CdSiP 2 , referred to as CSP) crystal is a II-IV-V chalcopyrite semiconductor compound with a high light transmission range (0.5-9.0μm), crystal nonlinear coefficient (d 36 =4.5pm / V), thermal conductivity (3.6W / m·K) and microhardness (30kg / mm 2 ). Cadmium phosphorus silicon can be used as laser pumps such as 1.064μm Nd:YAG laser, 1.55μm bait ion laser and 2.05μm Ho:LYF laser, etc., in directional infrared laser interference, infrared tracking, laser radar, laser guidance, satellite early warning , infrared remote sensing, environmental monitoring, infrared ranging, infrared imaging, infrared spectroscopy, infrared medical and other military and civilian fields have broad applicatio...

Claims

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