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A kind of horizontal growth device and growth method of phosphorus silicon cadmium single crystal

A growth device and a technology for crystal nucleus growth, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of increased cost and easy volatilization of the gold-plated layer.

Active Publication Date: 2017-03-15
北京雷生强式科技有限责任公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For methods such as Kevin T’s horizontal gradient growth of phosphorus-silicon single crystal, during the process of single crystal growth, because the gold-plated layer inside the glass cover is easy to volatilize, it needs to be replaced regularly, which increases the cost.

Method used

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  • A kind of horizontal growth device and growth method of phosphorus silicon cadmium single crystal
  • A kind of horizontal growth device and growth method of phosphorus silicon cadmium single crystal
  • A kind of horizontal growth device and growth method of phosphorus silicon cadmium single crystal

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Embodiment 1

[0109] as attached figure 1 As shown, the embodiment of the present invention provides a PBN boat-shaped crucible 1 for a horizontal growth device of phosphorus, silicon, and cadmium single crystals, including: a crystal nucleus growth section 11, a transition section 12, and a single crystal growth section 13,

[0110] The first end portion of the crystal nucleus growth segment 11 is wedge-shaped with a wedge angle of 30° (see attached Figure 1a ), the second end of the crystal nucleus growth section 11, the transition section 12 and the single crystal growth section 13 are sequentially connected,

[0111] The width and length of the crystal nucleus growth section 11 are respectively 15mm and 60mm,

[0112] The width and length of the single crystal growth segment 13 are 70 mm and 200 mm, respectively.

Embodiment 2

[0114] as attached figure 1 As shown, the embodiment of the present invention provides a PBN boat-shaped crucible 1 for a horizontal growth device of a phosphorus-silicon-cadmium single crystal, except that the wedge angle of the first wedge-shaped end is 70° (see attached Figure 1b ); the width and length of the crystal nucleus growth section 11 are respectively 2mm and 10mm; the width and length of the single crystal growth section 13 are respectively 5mm and 20mm. All the other structures of the crucible provided in Example 1 are the same.

Embodiment 3

[0116] as attached figure 1 As shown, the embodiment of the present invention provides a PBN boat-shaped crucible 1 for a horizontal growth device of a phosphorus-silicon-cadmium single crystal, except that the wedge angle of the first wedge-shaped end is 150° (see the appended Figure 1c ); the width and length of the crystal nucleus growth section 11 are respectively 20mm and 80mm; the width and length of the single crystal growth section 13 are respectively 100mm and 300mm. All the other structures of the crucible provided in Example 1 are the same.

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Abstract

The invention discloses a horizontal growth device and growth method of a phosphorus silicon cadmium mono-crystal, belonging to the technical field of phosphorus silicon cadmium mono-crystal preparation. The device comprises an outer layer quartz tube, an inner layer quartz tube sleeved in the outer layer quartz tube, and a PBN boat-shaped crucible sleeved in the inner layer quartz tube, wherein the PBN boat-shaped crucible comprises a crystal nucleus growth section, a transition section and a mono-crystal growth section which are connected with one another in sequence; a first end part of the crystal nucleus growth section is set to be spire-shaped so as to improve the uniformity of crystal orientation in spontaneous nucleation. By virtue of the design of a double-layer quartz tube, inert gas is introduced between the quartz tubes, so that the problems of tube explosion extremely easily generated in the crystal growth process can be solved, and the stability of a thermal field and the durability of the growth device can be improved. The method is used for preparing the phosphorus silicon cadmium mono-crystal on a horizontal crystal growth furnace with the growth device by using a horizontal gradient freezing method so as to ensure a more stable crystallization process and reduce the defects of parasitic nucleation; the method is beneficial for obtaining a CSP mono-crystal with good mono-crystal performance and complete crystal lattice, and is simple in operation, easy in control and low in cost.

Description

technical field [0001] The invention relates to the technical field of cadmium phosphorus silicon single crystal preparation, in particular to a horizontal growth device and a growth method of a phosphorus silicon cadmium single crystal. Background technique [0002] Cadmium silicon phosphorus (CdSiP 2 , referred to as CSP) crystal is a II-IV-V chalcopyrite semiconductor compound with a high light transmission range (0.5-9.0μm), crystal nonlinear coefficient (d 36 =4.5pm / V), thermal conductivity (3.6W / m·K) and microhardness (30kg / mm 2 ). Cadmium phosphorus silicon can be used as laser pumps such as 1.064μm Nd:YAG laser, 1.55μm bait ion laser and 2.05μm Ho:LYF laser, etc., in directional infrared laser interference, infrared tracking, laser radar, laser guidance, satellite early warning , infrared remote sensing, environmental monitoring, infrared ranging, infrared imaging, infrared spectroscopy, infrared medical and other military and civilian fields have broad applicatio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B29/10
Inventor 夏士兴莫小刚李兴旺张月娟王永国朱建慧李洪峰王军杰高学喜
Owner 北京雷生强式科技有限责任公司
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