Shield gate MOSFET device with uniformly doped channel and processing technology

A uniform doping and shielding gate technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of unfavorable device threshold stability, narrowing of P-region depletion region, uneven concentration distribution, etc., to achieve The effect of reducing the risk of punch-through, stabilizing the threshold voltage, and good doping concentration
CN112164722APending Publication Date: 2021-01-01VANGUARD SEMICON CORP
0 Cites 5 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
VANGUARD SEMICON CORP
Publication Date
2021-01-01

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a shield gate MOSFET device with a uniformly doped channel and a processing technology, which are characterized in that on the basis of the existing shield gate MOSFET device,a heavily doped first conductive type polycrystalline silicon column region is formed in a groove etching heavily doped polycrystalline silicon filling mode, and then a first conductive type body region is formed in a rapid thermal annealing mode; by optimizing the doping concentration of the first conductive type body region, a mutation junction is formed between the first conductive type body region and the drift region, so that the threshold consistency of the device is improved, meanwhile, the problem that the first conductive type body region is excessively compensated by the drift regionis solved, the doping concentration of the body region is improved, and the possibility that a parasitic triode of the device is turned on is reduced; reliability of the device is improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of power semiconductor devices, in particular to a shielded gate MOSFET device with a uniformly doped channel and a processing technology. Background technique

[0002] As the core of electric energy conversion and power application, power semiconductor devices are the key technologies in the fields of industrial electronics and consumer electronics. As a type of device with the largest market share of power semiconductor discrete devices, MOSFETs have excellent characteristics, especially in applications in the low-voltage field. Compared with bipolar devices, the unipolar characteristics of MOS devices have higher input impedance, faster switching speed, and easier Drive, low transient power consumption and other advantages. In order to improve the withstand voltage of the device, the power MOSFET device has experienced continuous development from the lateral structure to the vertical structure, from the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More