Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Local doping method for solar cells

A solar cell and local technology, applied in the field of solar cells, can solve the problems of increasing process steps and costs, and achieve the effect of reducing process cost and process complexity

Active Publication Date: 2016-05-11
TRINA SOLAR CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These processes greatly increase process steps and cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Local doping method for solar cells
  • Local doping method for solar cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] In order to make the content of the present invention more clearly understood, the present invention will be further described in detail below based on specific embodiments and in conjunction with the accompanying drawings.

[0024] A local doping method for solar cells, the steps of the method are as follows:

[0025] a) According to the structure of the solar cell, modify the molecular film of the corresponding pattern on the surface of the substrate 1 of the solar cell, such as figure 1 shown; wherein, there are hydrophilic groups and hydrophobic groups in the molecular membrane; the hydrophilic groups are -OH or -COH or -COOH or -NH 2 ; The hydrophobic group is -S or -Cl or -F or -NO 2 .

[0026] b) setting a solution containing the dopant source 4 on the substrate 1 processed in step a), and having a polar solvent in the solution, so that the dopant source 4 is distributed on the corresponding pattern;

[0027] c) The volatile solution can be volatilized natural...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed in the present invention is a solar cell local-area doping method. The method comprises the steps: (a) molecular films with hydrophilic groups and / or hydrophobic groups are formed on the surface of a substrate; (b) doping sources are provided on the surface of the substrate said in the step (a), and the doping sources are distributed on the patterns formed by the molecular films; and (c) the thermal diffusion is conducted to the obtained substrate in the step (b), and therefore the substrate of the local-area doping solar cell is formed. According to the method in the present invention, the local-area doping structures with different patterns and sizes can be obtained, and the method is particularly suitable for building local-area emitter junctions and high-low surface fields of the solar cell.

Description

technical field [0001] The invention relates to a local doping method of a solar cell, belonging to the technical field of solar cells. Background technique [0002] Diffusion doping technology is to deposit and coat gas phase and liquid phase substances containing doping elements (such as phosphorus, boron, etc.) on the surface of the substrate. Diffuse to the substrate to form N-type or P-type doping. Since the doping source is applied to the entire surface of the substrate, this technology can only form uniform doping on the entire surface, and cannot realize the local emitter junction and high and low junction surface fields of solar cells. At present, the heavy doping of the local contact area is mainly formed on the back surface of the silicon wafer by mask technology, and then diffused at high temperature; or the non-doped area is etched by etching technology. These processes greatly increase process steps and costs. Contents of the invention [0003] The technic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/228
CPCH01L21/228H01L31/18Y02E10/50Y02P70/50H01L31/02167H01L31/02366H01L31/0288H01L31/186
Inventor 盛赟
Owner TRINA SOLAR CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products