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Preparation method of CIGS absorbing layer film doped with alkaline metal elements

A metal element, copper indium gallium selenide technology, applied in electrical components, photovoltaic power generation, circuits, etc., can solve the problems of uneven mixing of elements, uneven distribution of elements, and large roughness of prefabricated layers, so as to achieve good crystallinity and maintain Integrity, bandgap adjustable effect

Inactive Publication Date: 2017-06-09
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the sputtering process, there are usually problems of large roughness, poor adhesion and uneven distribution of elements in the metal prefabricated layer, which is caused by the tendency of the low melting point metal In to grow in islands.
The roughness and element distribution of the metal prefabricated layer will directly affect the quality of the absorber layer after selenization, thereby affecting the efficiency of the battery module
[0012] Therefore, the existing alkali metal element doping technology that relies on substrate diffusion mainly has the disadvantages of strong dependence on the substrate material and uncontrollable diffusion; the doping technology that relies on post-evaporation post-treatment mainly has the disadvantage of complicated procedures
[0013] However, the existing post-sputtering selenization technology mainly has the disadvantages of large prefabricated layer roughness, poor adhesion and uneven mixing of elements in the deposition of metal prefabricated layers.

Method used

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  • Preparation method of CIGS absorbing layer film doped with alkaline metal elements
  • Preparation method of CIGS absorbing layer film doped with alkaline metal elements
  • Preparation method of CIGS absorbing layer film doped with alkaline metal elements

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] (1) firstly make a silicon nitride barrier layer on a soda-lime glass substrate;

[0061] (2) Then deposit the back contact Mo layer on the substrate. First, the substrate is introduced into the sputtering deposition equipment, and after the equipment is closed, the vacuum is lowered to less than 4×10 -4 Pa; the first step is to deposit a high-resistance Mo layer after pre-sputtering the Mo target. The target is selected as a high-purity Mo target, the air pressure is selected at 0.6Pa, and the power density is maintained at 4W / cm 2 , the sputtering time is 10 minutes; the second step is to deposit a low-resistance Mo layer, the target is selected as a high-purity Mo target, the air pressure is selected at 0.1Pa, and the power density is maintained at 4W / cm 2 , the sputtering time is 60 minutes; the third step is to deposit the layer doped with alkali metal elements, the target material is selected as the target material doped with NaF, in which Na 2.5at%, the sputterin...

Embodiment 2

[0065] (1) firstly make a silicon nitride barrier layer on a soda-lime glass substrate;

[0066] (2) Then deposit the back contact Mo layer on the substrate. First, the substrate is introduced into the sputtering deposition equipment, and after the equipment is closed, the vacuum is lowered to less than 4×10 -4 Pa, the first step is to pre-sputter the Mo target and then deposit a high-resistance Mo layer. The target is selected as a high-purity Mo target, the air pressure is selected at 0.6Pa, and the power density is maintained at 4W / cm 2 , the sputtering time is 10 minutes, the second step is to deposit a low-resistance Mo layer, the target is selected as a high-purity Mo target, the air pressure is selected at 0.1Pa, and the power density is maintained at 4W / cm 2 , the sputtering time is 60 minutes, the third step is to deposit the layer doped with alkali metal elements, the target material is selected as the Mo target material doped with KF, the atomic number ratio of the ...

Embodiment 3

[0070] (1) firstly make a silicon nitride barrier layer on a soda-lime glass substrate;

[0071] (2) Then deposit the back contact Mo layer on the substrate. First, the substrate is introduced into the sputtering deposition equipment, and after the equipment is closed, the vacuum is lowered to less than 4×10 -4 Pa, the first step is to pre-sputter the Mo target and then deposit a high-resistance Mo layer. The target is selected as a high-purity Mo target, the air pressure is selected at 0.6Pa, and the power density is maintained at 4W / cm 2 , the sputtering time is 10 minutes, the second step is to deposit a low-resistance Mo layer, the target is selected as a high-purity Mo target, the air pressure is selected at 0.1Pa, and the power density is maintained at 4W / cm 2 , the sputtering time is 60 minutes, and the third step is to deposit the layer doped with alkali metal elements. The target material is selected as the Mo target material doped with NaF, wherein the atomic number ...

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Abstract

The invention belongs to the technical field of a CIGS thin-film solar cell, and particularly discloses a preparation method of a CIGS absorbing layer film doped with alkaline metal elements. The preparation method comprises the steps of (1), firstly, preparing a silicon nitride barrier layer on a soda-lime glass substrate; (2), then depositing a back contact Mo layer on the substrate; (3), depositing a CIG metal prefabricated layer on the deposited back contact Mo layer doped with the alkaline metal elements; and (4), preparing the CIGS absorbing layer film doped with the alkaline metal elements. The preparation method has advantages of substrate material dependence reduction, controllable diffusion, simple and easy-realizing process, low roughness of the metal prefabricated layer, high adhesiveness, high element mixing uniformity, high crystallinity of the prepared film, and high band gap adjustability.

Description

technical field [0001] The invention belongs to the technical field of copper-indium-gallium-selenium-based thin-film solar cells, and in particular relates to a preparation method of a copper-indium-gallium-selenide absorbing layer film doped with alkali metal elements. Background technique [0002] Copper-indium-selenide-based thin-film solar cells have attracted widespread attention in the photovoltaic field due to their high conversion efficiency, good low-light performance, strong radiation resistance, and adjustable band gap. [0003] In 2016, the German Center for Solar Energy and Hydrogen Energy Research (ZSW) relied on co-evaporation to prepare a copper indium gallium selenide (CIGS) solar cell with a conversion efficiency of 22.6%, setting a new world record. The copper indium selenide based thin film absorber layer is the core part of the copper indium selenide based thin film solar cell, and its material belongs to the group I-III-IV chalcopyrite phase semiconduc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032
CPCH01L31/0323Y02E10/541
Inventor 洪瑞江吴兆
Owner SUN YAT SEN UNIV
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