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GaInP/GaAs/Ge/Ge four-junction solar cell and preparation method thereof
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A technology of solar cells and sub-cells, which is applied in the field of solar cells and can solve problems such as insufficient energy conversion and utilization
Active Publication Date: 2012-11-21
SUZHOU NAFANG TECH DEV
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The Ge battery in the triple-junction battery covers a wider spectrum, and its short-circuit current can reach more than twice that of the other two-junction batteries. Due to the constraints of the series connection of the three-junction batteries, the energy of the solar spectrum corresponding to the Ge battery is not fully converted and utilized. , so there is still room for improvement in the efficiency of the triple-junction cell
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no. 1 Embodiment approach
[0021] figure 1 Shown is a structural schematic diagram of a first embodiment of a GaInP / GaAs / Ge / Ge four-junction solar cell with a buffer layer.
[0022] figure 2 Shown is a schematic diagram of the product structure of a first embodiment of a GaInP / GaAs / Ge / Ge four-junction solar cell.
[0023] image 3 Shown is a schematic structural diagram of a first embodiment of a GaInP / GaAs / Ge / Ge four-junction solar cell without a buffer layer.
[0024] This embodiment provides a GaInP / GaAs / Ge / Ge four-junction solar cell grown in a front-mount manner, and the bandgap combination is 1.90eV / 1.42eV / 0.67eV / 0.67eV. The structure of the GaInP / GaAs / Ge / Ge four-junction cell solar cell is as follows image 3 As shown, it includes a Ge substrate layer 30, and a first Ge subcell 31, a first tunnel junction 32, a second Ge subcell 33, a second tunnel junction 34, and a GaAs subcell arranged in sequence on the Ge substrate layer 30. A subcell 35 , a third tunnel junction 36 , a GaInP subcell 3...
no. 2 Embodiment approach
[0051] This embodiment provides a method for preparing a GaInP / GaAs / Ge / Ge four-junction solar cell using a front mounting method, such as Figure 4 shown, including:
[0052] Step 401, providing a substrate layer;
[0053] Step 402, growing a first Ge sub-cell on the surface of the Ge substrate layer;
[0054] Step 403, growing a first tunnel junction on the surface of the first Ge sub-cell;
[0055] Step 404, growing a second Ge sub-cell on the surface of the first tunnel junction;
[0056] Step 405, growing a second tunnel junction on the surface of the second Ge sub-cell;
[0057] Step 406, growing GaAs sub-cells on the surface of the second tunnel junction;
[0058] Step 407, growing a third tunnel junction on the surface of the GaAs sub-cell;
[0059] Step 408, growing GaInP sub-cells on the surface of the third tunnel junction;
[0060] Step 409, growing a contact layer on the surface of the GaInP sub-cell.
[0061] The above steps are grown by MOCVD (Metal Organi...
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Abstract
The invention provides a GaInP / GaAs / Ge / Ge four-junction solar cell, comprising a Ge substrate layer, wherein a first Ge sub cell, a first tunnel junction, a second Ge sub cell, a second tunnel junction, a GaAs sub cell, a third tunnel junction, a GaInP sub cell and a contact layer of (In) / GaAs or Ge are arranged on the Ge substrate in sequence. The invention also provides a preparation method for the GaInP / GaAs / Ge / Ge four-junction solar cell. The preparation method comprises the following steps: 1, the Ge substrate layer is provided; 2, the first Ge sub cell is grown on the surface of the Ge substrate layer; 3, the first tunnel junction is grown on the surface of the first Ge sub cell; 4, the second Ge sub cell is grown on the surface of the first tunnel junction; 5, the second tunnel junction is grown on the surface of the second Ge sub cell; 6, the GaAs sub cell is grown on the surface of the second tunnel junction; 7, the third tunnel junction is grown on the surface of the GaAs sub cell; 8, the GaInP sub cell is grown on the surface of the third tunnel junction; and 9, the contact layer is grown on the surface of the GaInP sub cell.
Description
technical field [0001] The invention relates to the field of solar cells, in particular to a GaInP / GaAs / Ge / Ge four-junction solar cell and a preparation method thereof. Background technique [0002] In the field of solar cells, how to fully absorb the full spectrum of the sun, improve the generation efficiency of photogenerated carriers, and promote the separation of electrons and holes has always been the core key issue in improving the efficiency of solar cells. The current structural design of solar cells is basically based on the following two considerations: one is to give priority to lattice matching and put photocurrent matching in a secondary position. However, due to its determined bandgap energy, the lattice-matched cell structure limits the photocurrent matching of solar cells, making it impossible to realize full-spectrum absorption and utilization of sunlight. The second is to give priority to the photocurrent matching of the multi-junction structure and adopt ...
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