Method for preparing indium phosphide crystals by utilizing indium-phosphorus mixture

An indium phosphide and mixture technology, which is applied in the field of synthesizing indium phosphide by using indium-phosphorus mixed balls, can solve the problems of increasing the contamination of materials and increasing the cost of material preparation, so as to reduce the cost of materials, reduce the pollution of materials, and improve the purity of crystals. Effect

Active Publication Date: 2020-02-07
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
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Problems solved by technology

Synthesis and crystal growth are carried out in a "two-step" method, which greatly increases the possibility of material contamination and increases the cost of material preparation

Method used

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  • Method for preparing indium phosphide crystals by utilizing indium-phosphorus mixture
  • Method for preparing indium phosphide crystals by utilizing indium-phosphorus mixture
  • Method for preparing indium phosphide crystals by utilizing indium-phosphorus mixture

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Embodiment Construction

[0032] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0033]The method is based on a system for preparing indium phosphide crystals by using an indium-phosphorus mixture, and the system includes a vacuum system, a gas charging and discharging system, a temperature and pressure control system, an electrical control system, a cooling cycle system and a weighing system. These systems are commonly used basic systems in this field, especially single crystal furnaces for preparing indium phosphide crystals based on the in-situ synthesis method. These systems are basic configurations and will not be described here. In order to realize the preparation of indium phosphide crystals by using indium-phosphorus mixing balls, the system improves the furnace body.

[0034] see figure 1 , the furnace body is divided into synthetic growth chamber 1, feeding chamber 19 and charging chamber 27, charging chamber 27 and fee...

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Abstract

The invention relates to a method for preparing indium phosphide crystals by using an indium-phosphorus mixture, and belongs to the technical field of semiconductors, and the method comprises the following steps of: preparing indium-phosphorus mixed balls, charging, keeping blast furnace pressure and low temperature of the indium-phosphorus mixed balls, melting a covering agent, feeding, synthesizing and growing the crystals. The proportioned indium-phosphorus mixed balls are directly melted to synthesize the indium phosphide crystals. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then a mixture of the indium-phosphorus mixed balls and boron oxide powder is put into a melt with a boron oxide covering agent, and crystalgrowth is carried out in situ after synthesis. The method has the advantages of being short in reaction time, high in efficiency and capable of saving raw materials, effectively reducing the risk that the materials are contaminated, saving procedures and reducing the material preparation cost.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to the preparation of indium phosphide, in particular to a method for synthesizing indium phosphide by using indium-phosphorus mixed balls. Background technique [0002] Indium phosphide (InP) is a III-V group compound semiconductor material composed of group III element indium (In) and group V element phosphorus (P). It has a very important strategic position in the field of semiconductor materials and is the current optoelectronic Irreplaceable semiconductor materials for devices and microelectronics. Compared with germanium and silicon materials, InP has many advantages: direct transition energy band structure, high electro-optical conversion efficiency; high electron mobility, easy to make semi-insulating materials, suitable for making high-frequency microwave devices and circuits; working temperature High; strong radiation resistance; high conversion efficiency as a solar ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B15/02C30B28/10
CPCC30B29/40C30B15/02C30B28/10C30B15/20C30B15/002Y02P70/50
Inventor 孙聂枫王书杰史艳磊邵会民付莉杰李晓岚王阳徐森锋刘惠生孙同年
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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