Relative humidity sensor compatible of CMOS process

A kind of relative humidity and sensor technology, applied in the direction of instruments, scientific instruments, material capacitance, etc., can solve problems such as circuit detection difficulties, and achieve the effect of being conducive to detection, small temperature drift, and reducing production costs

Inactive Publication Date: 2005-08-24
SOUTHEAST UNIV
View PDF0 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the aluminum deposition thickness of the standard CMOS process line is generally only 1 to 2 microns, the humidity sensitive capacitance value induced by the side wall is relatively small, which brings difficulties to the detection of subsequent circuits.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Relative humidity sensor compatible of CMOS process
  • Relative humidity sensor compatible of CMOS process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] A CMOS process compatible relative humidity sensor for detecting humidity, which consists of a substrate 1, an oxide layer 2, a capacitor lower plate 3, and a capacitor upper plate 4, the oxide layer 2 is set on the substrate 1, and the capacitor lower plate 3 is spread on the oxide layer 2, and the upper plate 4 of the capacitor is located above the substrate 1 and the oxide layer 2. In this embodiment, the upper plate 4 of the capacitor is fixed on the oxide layer 2 through the anchor region. A hole 41 is provided on the region above the lower plate 3 of the capacitor on 4 .

[0011] The present invention is a capacitive relative humidity sensor using air as a humidity sensing medium, which consists of a substrate 1, an oxide layer 2, a capacitor lower plate 3 and a capacitor upper plate 4. The lower electrode plate 3 of the capacitor is located on the oxide layer 2, and is formed by sputtering aluminum and etching, and its top view is shown in the attached figure 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This invention discloses a CMOS craft compatible relative humidity sensor which is used in examining the humidity, by the substrate, taught and influenced the level, under the electric capacity the pole plate, on the electric capacity the pole plate is composed, teaches and influences the level to be located in on the substrate, under the electric capacity the pole plate even shop in taught and influenced on the level, on the electric capacity the pole plate was located thesubstrate and the oxide layer place above: The advantages are simple structure, the temperature drift slightly, strong anti-interference low cost, quickly response and easy detection.

Description

technical field [0001] The invention relates to a relative humidity sensor compatible with a standard CMOS process, in particular to a relative humidity sensor compatible with a CMOS process using air as a humidity sensitive medium. Background technique [0002] The humidity sensor is manufactured based on the physical effect or chemical reaction of its functional materials related to humidity, and it has the function of converting the physical quantity of humidity into an electrical signal. Humidity measurement has important applications in industrial and agricultural production, meteorology, environmental protection, national defense, scientific research, aviation and other departments. As an important part of the humidity measurement system, the humidity sensor has been developed for many years. From the initial hair meter and dry wet bulb humidity sensor to the LiCl electrolyte humidity sensor that can output electrical signals. Electrolyte humi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00G01N27/22
Inventor 彭韶华黄庆安秦明张中平
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products