52 results about "Aluminum deposition" patented technology

The present invention relates generally to an improved apparatus and process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron aperture width applications. In one aspect of the invention, a dielectric layer is formed over a conducting member. A thin nucleation layer is then deposited onto the dielectric layer prior to etching high aspect ratio apertures through the nucleation and dielectric layers to expose the underlying conducting member on the aperture floor. A CVD metal layer is then deposited onto the structure to achieve selective deposition within the apertures, while preferably also forming a blanket layer on the field. The present apparatus and process reduce the number of steps necessary to fabricate CVD metal interconnects and layers that are substantially void-free and planarized. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the apertures to form vias and contacts occurs without the formation of oxides between the layers.

The present disclosure relates to a film-attached panel having an anti-fingerprint property and a manufacturing method thereof. The film-attached panel includes a base material, a base layer attached on a surface of the base material, an aluminum deposition layer attached on the base layer, the aluminum deposition layer being processed to have hairlines, a passivation layer disposed on the aluminum deposition layer, and a glossy coating layer formed on the passivation layer, wherein a depth of the hairline processed on the aluminum deposition layer is in the range of 0.25 to 0.35 micron.

Disclosed is a thermal transfer paper comprising a metal layer and capable of partially dissolving the metal layer, which comprises a dissolving function formed of at least one resin selected from the group consisting emulsion resins, water-soluble acryl resins, water-soluble polybutyral resins, alcohol-soluble polybutyral resins, water-soluble vinyl resins and alcohol-soluble vinyl resins, water or an alcohol solvent, and sodium hydroxide or an acid on the metal layer. The thermal transfer paper according to the present invention is provided with a dissolving function layer 30 able to dissolve a part of a metal layer 20, preferably an aluminum deposition layer 21 to form a dissolved part according to a desired design or pattern. Therefore, it is possible to produce unique color and texture, unlike a metal layer pattern formed by oxidation of a part on the metal layer. Specially, when a different color is transferred on a transfer object by an ink layer formed on the transfer paper, it is harmonized with a background color of the transfer object to produce a partial metal-like effect. Thus, according to the present invention, a design with superior texture and color can be readily formed in various patterns, thereby accomplishing a speedy, simple and thereby efficient working process for production and cost saving effect.

A method of forming a semiconductor device includes providing a semiconductor device including a conductor formed thereon. A dielectric layer is formed over the conductor and a recess is formed in the dielectric layer by removing a portion of the dielectric layer to expose at least a portion of the conductor. A first layer of aluminum is deposited over the top surface of the dielectric, along the sidewalls of the dielectric layer and over the exposed portion of the conductor without altering the temperature of the semiconductor device. A second layer of aluminum is deposited over the first layer of aluminum at a temperature greater than about 300° C. A third layer of aluminum is deposited over the second layer of aluminum so as to completely fill the recess in the dielectric layer. The third layer of aluminum is slow deposited at a temperature greater than about 300° C.

The invention provides a method for preparing aluminum oxide and other products from aluminiferous materials such as bauxite, high iron bauxite, alunite, kaoline, alumina, fly ash, coal gangue, aluminum ash, nepheline, clay and the like. The method comprises the following steps: (1) crushing, grinding and mixing the aluminiferous materials with ammonium sulfate and then roasting; (2) dissolving the roasted product (clinker aggregate) in water, and filtering to obtain aluminum ammonium sulfate solution and filter residues; (3) carrying out deferrization, aluminum deposition or recrystallization on the aluminium ammonum sulfate solution with ammonia to prepare aluminum oxide, and meanwhile, recycling the ammonium sulfate; (4) preparing silicon dioxide from the filter residues, and taking the remaining residues containing ferrum as the raw material for ironmaking. The method is suitable for treating various aluminiferous materials, has the advantages of simple technical process, simple equipment, no emission of solid, liquid and gas wastes, and no secondary pollution, and realizes the high-added-value green complex utilization of the aluminiferous materials such as bauxite, high ironbauxite, alunite, kaoline, alumina, fly ash, coal gangue, aluminum ash, nepheline, clay and the like.