47 results about "Aluminum deposition" patented technology

The invention provides a method for preparing aluminum oxide and other products from aluminiferous materials such as bauxite, high iron bauxite, alunite, kaoline, alumina, fly ash, coal gangue, aluminum ash, nepheline, clay and the like. The method comprises the following steps: (1) crushing, grinding and mixing the aluminiferous materials with ammonium sulfate and then roasting; (2) dissolving the roasted product (clinker aggregate) in water, and filtering to obtain aluminum ammonium sulfate solution and filter residues; (3) carrying out deferrization, aluminum deposition or recrystallization on the aluminium ammonum sulfate solution with ammonia to prepare aluminum oxide, and meanwhile, recycling the ammonium sulfate; (4) preparing silicon dioxide from the filter residues, and taking the remaining residues containing ferrum as the raw material for ironmaking. The method is suitable for treating various aluminiferous materials, has the advantages of simple technical process, simple equipment, no emission of solid, liquid and gas wastes, and no secondary pollution, and realizes the high-added-value green complex utilization of the aluminiferous materials such as bauxite, high ironbauxite, alunite, kaoline, alumina, fly ash, coal gangue, aluminum ash, nepheline, clay and the like.

An aluminum deposition shield substantially improves transfer of radiated heat from within the vacuum chamber, in comparison to a stainless steel deposition shield. The aluminum deposition shield remains cooler during wafer processing and assists in cooling the chamber components.

A method for spot electroplating aluminum onto a metallic substrate without submersion or dipping of the metallic substrate in an electroplating bath, the method comprising: (i) spot coating said metallic substrate with an aluminum ion-containing electrolyte contained within a protective structure possessing at least one aperture, and releasing said electrolyte from said at least one aperture onto said metallic substrate to form a coating of said electrolyte thereon, wherein said electrolyte is in contact with an anode; and (ii) applying a voltage potential between the anode and metallic substrate polarized as cathode when the aluminum ion-containing electrolyte is released from said aperture and forms a coating on the metallic substrate, to produce a coating of aluminum on the substrate. Devices, such as brush and ball pen plating devices, for achieving the above-described method are also described.

A dual damascene process is disclosed, in which a contact via and trench pattern is etched into insulating layer(s). The via is first partially filled by selective metal (e.g., tungsten) deposition, thereby forming a partial plug that raises the floor and reduces the effective aspect ratio of the trench and via structure. The remaining portion of the contact via is then filled with a more conductive material (e.g., aluminum). This deposition also at least partially fills the overlying trench to form metal runners. In the illustrated embodiment, hot aluminum deposition fills the portion of the contact via left unoccupied by the selective deposition and overfills into the trench. A further, cold aluminum deposition then follows, topping off the trench prior to planarization. The dual damascene structure thus exhibits a raised floor relative to conventional dual damascene metallization, while still retaining the conduction benefits of aluminum through a significant portion of the contact and the metal runner formed in the trench.

The present invention relates generally to an improved apparatus and process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron aperture width applications. In one aspect of the invention, a dielectric layer is formed over a conducting member. A thin nucleation layer is then deposited onto the dielectric layer prior to etching high aspect ratio apertures through the nucleation and dielectric layers to expose the underlying conducting member on the aperture floor. A CVD metal layer is then deposited onto the structure to achieve selective deposition within the apertures, while preferably also forming a blanket layer on the field. The present apparatus and process reduce the number of steps necessary to fabricate CVD metal interconnects and layers that are substantially void-free and planarized. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the apertures to form vias and contacts occurs without the formation of oxides between the layers.

A process has been developed in which high aspect ratio contact holes can be successfully filled, without voids, using a composite metallization layer. After adhesive and barrier layers are deposited, an additional titanium adhesive layer is deposited, for purposes of improving the adhesion of subsequent, overlying metallizations to underlying device structures. A two step aluminum deposition process is then employed, using an initial cold deposition followed by a hot aluminum deposition. The hot aluminum deposition process results in complete filling of the high aspect ratio contact hole, and also allows the formation of a titanium-aluminum intermetallic layer at the interface of the titanium adhesive layer and the initial, cold aluminum deposition layer.

The invention discloses a method for producing aluminum oxide by treating low-grade bauxite with an ammonia-alkali combination method. The method comprises the following main steps: performing mineral dressing and silicon removal on the low-grade bauxite; selecting concentrates, performing processes of high-pressure dissolution, red mud separation and washing, crystal seed decomposition, aluminum hydroxide separation and washing, aluminum hydroxide calcination and the like on the selected concentrates to produce metallurgical-grade sand-shaped aluminum oxide, and recycling a seed precipitation solution after evaporation and allocation; and selecting tailings, performing low-temperature leaching by adopting an ammonium hydrogen sulfate solution, and performing silicon residue separation and washing, ammonia separation aluminum deposition and coarse aluminum hydroxide separation and washing to obtain coarse aluminum hydroxide. By adopting the method disclosed by the invention, the organic combination of a mineral dressing and silicon removing process, a high-temperature Bayer method process for selecting concentrates and an ammonium hydrogen sulfate solution low-temperature leaching process for selecting tailings is achieved, the advantages of each process are brought into full play, and the utilization ratio of a low-grade bauxite resource is maximized while high-quality metallurgical-grade sand-shaped aluminum oxide is produced.

The invention provides a neodymium-iron-boron permanent magnet surface protection method. The method comprises 1, material polishing: carrying out conventional polishing on a permanent magnetism material, 2, degreasing oil removal: adding an alkaline solution into the polished permanent magnetism material and carrying out conventional degreasing oil removal, 3, conventional rust removal utilizing wet method sandblasting, 4, vacuum magnetron sputtering aluminum deposition and 5, vacuum plating of an aluminum trioxide protection layer. Through vacuum magnetron sputtering aluminum and aluminum trioxide plating, a neodymium-iron-boron permanent magnet vacuum aluminum plating binding force is improved and corrosion resistance is improved.

The invention provides a graphite sheet and metal layer composed thermally conductive sheet and its composing method. According to one embodiment of the invention, through a PVD aluminum deposition layer, the composition of a graphite sheet and other metal layers becomes possible so as to solve the difficulty with increasing the thickness of graphite sheet and thermally-conductive sheet and the problem of low thermal conductivity in the thickness direction. Based on these ideas, the invention aims to improve the overall heat capacity of the thermally conductive sheet and the comprehensive thermal conductivity in the thickness direction. The thermally conductive sheet of the invention can replace the product structure characterized by the adhesion of adhesive layers among multiple graphite sheet layers or between a graphite sheet and metal. Based on the prior art, the present invention combines the PVD aluminum plating technique and the metal hot-press diffusion method. Compared with the pure use of CVD or liquid plating method, the method of the invention is more efficient to obtain a composite metal layer with the same thickness. In addition, the once hard-to-obtain composite thickness and composite structure in the prior art can be more likely to be achieved. The composing method resolves the problem of how to accumulate composite metal layers with designated thicknesses and avoids the inherent defects of CVD and the liquid plating method.

The invention discloses a preparation technology for bacterial-resistant stainless steel. The preparation technology comprises steps of (1) conducting alkali-cleaning, chemical oxidization, aluminum deposition and acid-cleaning for stainless steel orderly to achieve a primary work piece, and (2) spraying silver glue body on the surface of the primary work piece and then sintering the primary work piece for 30 to 35 mins at the temperature of 300 to 500 DEG C. The chemical oxidization process is that the stainless steel work piece is placed in a steaming chamber; the steam chamber is filled with water steam; the chemical oxidization time is one to two hours; then the stainless steel work piece is taken out of the steam chamber and then immersed into thick sulfuric acid solution for 5 mins; the aluminum deposition process is that the aluminum glue body is sprayed on the surface of the stainless steel work piece and sintered at the temperature of 200 DEG C; and during the spraying, the primary work piece is at a vibrating state with vibration frequency of 100 to 150 times/min. By the use of the preparation technology, bacterial-resistant stainless steel can be prepared.

The invention provides an antistatic composition for an electrochemical aluminum coloring layer and a preparation method thereof. A BOPET film layer, which is used as the carrier of various coatings of electrochemical aluminum, is an insulator. Continuous friction in the production process makes it easy to accumulate and enrich static electricity, which causes certain harm to subsequent processing. The antistatic composition is prepared from the following raw materials in parts by weight: 10-50 parts of acrylic resin, 1-10 parts of cellulose acetate butyrate, 5-10 parts of aluminum powder, 0.1-1 part of aluminate coupling agent, 0.1-1 part of polyamide wax slurry, 10-40 parts of butanone, 10-40 parts of ethyl acetate, 1-10 parts of n-propyl acetate. The antistatic composition has the advantages of simple and easy control preparation process, stable performance, no aluminum deposition phenomenon, convenient and quick use, excellent compatibility with most polymer resins, obvious antistatic effect, no influence on glossiness and hot stamping performance of electrochemical aluminum, and greatly improving appearance quality and yield of electrochemical aluminum.

The invention discloses an alignment marking method which comprises the steps of: providing a wafer substrate provided with an inorganic film structure, carrying out groove etching on the inorganic film structure to form a groove and first alignment marks; carrying out polysilicon filling by depending on the first alignment marks, covering the organic film structure and filling partial groove by polysilicon, then removing partial polysilicon in the groove through photoetching and forming second alignment marks; carrying out hole medium filling by depending on the second alignment marks, filling a hole medium layer in the second alignment marks and covering the upper surface of the polysilicon, then removing partial hole medium between the second alignment marks through etching to form third alignment marks; carrying out tungsten deposition by depending on the third alignment marks, covering the upper surface of the hole medium layer and filling partial third alignment marks by tungsten to form fourth alignment marks, then removing tungsten on the surface of the hole medium layer by adopting a chemical mechanical polishing manner; and carrying out aluminum deposition by depending on the fourth alignment marks, and filling the fourth alignment marks and covering the upper surface of the hole medium layer by aluminum.

The invention discloses a method for processing the copper surface of an interconnected wire. A step of forming an aluminum cover layer on the surface of a copper interconnected wire by using selective aluminum deposition and a step of processing the aluminum cover layer by using a plasma beam in reductive gas atmosphere are executed cyclically. Aluminum atoms are gradually dissolved into the surface of the copper interconnected wire in order to form a copper aluminum alloy cover layer on the surface of the copper interconnected wire. The mobility of the copper aluminum alloy cover layer is less than that of the aluminum cover layer, so a problem of semiconductor device failure caused by electro mobility of the interconnected wire is suppressed while copper atoms are prevented from diffusing.

Provided is a method for producing a polyvinyl alcohol laminated paper, which is free of wrinkles and concave curls, whereby an aluminum vapor-deposited layer obtained by vacuum deposition of aluminum is disposed on the surface of a polyvinyl alcohol film, a water-based adhesive having a concentration of 40 to 60%, a viscosity of 500 to 4,000 mPa.s and a coverage of 3 to 5 g/m2 is applied to the reverse surface of the polyvinyl alcohol film, said polyvinyl alcohol film is laminated to a base paper, and a printed layer is formed by printing on the polyvinyl alcohol laminated paper. Alternatively, the water-based adhesive having a concentration of 40 to 60%, a viscosity of 500 to 4,000 mPa.s and a coverage of 3 to 5 g/m2 is applied to the reverse surface of the polyvinyl alcohol film, said polyvinyl alcohol film is laminated to a base paper, an aluminum deposition layer of a transfer foil obtained by vacuum deposition of aluminum is transferred to the polyvinyl alcohol film, and a printed layer is formed by printing on the polyvinyl alcohol laminated paper.

The invention discloses a processing method for antibacterial stainless steel. The processing method includes the steps of 1, sequentially carrying out alkali washing, chemical oxidation, aluminum deposition and acid pickling to obtain primary work-pieces, wherein stainless steel work-pieces are placed into a steam chamber filled with water vapor and then are immersed into concentrated sulfuric acid solutions for 5 minutes in the chemical oxidation process and aluminum colloid is sprayed on the surfaces of the stainless steel work-pieces and then the stainless steel work-pieces are sintered in the aluminum deposition process; 2, spraying silver colloid on the surfaces of the primary work-pieces and then sintering the primary work-pieces, wherein in the spraying process, the primary work-pieces are in a vibration state and the vibration frequency is 100-150 times per minute; and 3, spraying the silver colloid on the surfaces of the work-pieces treated in the step 2 and then sintering the work-pieces at 300-350 DEG C for 10 min, wherein the spraying flow is 0.1-0.5 mL/min and the spraying time is 10-12 min. The antibacterial stainless steel can be produced through the processing method for the antibacterial stainless steel.

The invention discloses a method for electrolyzing aluminum at the low temperature in a deep eutectic solvent. The method comprises the following steps that a hydrogen bond donor and a hydrogen bond receptor are mixed according to proportioning, the deep eutectic solvent is obtained, then metal oxide is dissolved in the deep eutectic solvent, and a system serves as an electrolyte solution for electrolyzing. The method has the advantages that the deep eutectic solvent serves as the electrolyte, the deep eutectic solvent has common characteristics of ion liquid and further has the advantages ofbeing simple in synthesizing, low in price, high in purity and the like, and the deep eutectic solvent is the ideal solvent for electrochemical deposition of the aluminum; aluminum electrolyzing at the room temperature is realized, a bright, homogeneous and dense aluminum deposition layer is obtained, the adhesion ability of the aluminum deposition layer is improved, formation of dendrite aluminumis avoided, and the problem that a current deposition layer is prone to falling is solved; and gas generation and environmental pollution in the electrolyzing process are avoided.