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Diamond particle detector electrode structure and preparation method thereof

A diamond particle and electrode structure technology, applied in the field of photoelectric detection, can solve the problems of ineffective collection of carriers, uneven electric field distribution of the planar interdigital structure, and achieve the same voltage, improved responsivity and sensitivity, and consistent distance. Effect

Pending Publication Date: 2022-04-12
CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
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  • Claims
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Problems solved by technology

[0007] In order to solve the problem that the electric field distribution of the planar interdigitated structure is uneven and the carriers cannot be collected effectively, the present invention designs and prepares an electrode structure of a diamond particle detector to effectively improve the resolution, collection efficiency and sensitivity of the detector. and responsiveness

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  • Diamond particle detector electrode structure and preparation method thereof
  • Diamond particle detector electrode structure and preparation method thereof
  • Diamond particle detector electrode structure and preparation method thereof

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Embodiment Construction

[0032] The technical solutions of the present invention will be further described below in conjunction with specific embodiments.

[0033] The electrode structure of a diamond particle detector provided by the present invention is prepared by the above-mentioned preparation method. like figure 1 and figure 2 As shown, the diamond substrate surface of the diamond particle detector is provided with a positive metal electrode and a negative metal electrode, and the positive and negative metal electrodes are connected with at least one interdigitated electrode, and the interdigitated electrodes are connected with vertical electrodes. a planar electrode, and the planar electrode is arranged inside the diamond substrate. The specific preparation method of the electrode structure of the diamond particle detector is as follows:

[0034] S1. Select a single crystal diamond substrate with a thickness of 1000 μm. The size of the diamond substrate is between 3×3mm and 10×10mm, and the...

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Abstract

The invention relates to a method for preparing an electrode structure of a diamond particle detector, which comprises the following steps of: S1, manufacturing a periodic groove structure on a monocrystal diamond, and enabling all grooves to be correspondingly parallel; s2, the prepared single crystal diamond is cleaned; s3, depositing aluminum on the four sides and the bottom of the inner wall of the groove, depositing gold in the groove which is not filled with the aluminum, and finally covering the upper surfaces of the aluminum and the gold with chromium to obtain a planar electrode; and S4, an interdigitated electrode, a positive metal electrode and a negative metal electrode are deposited on the monocrystal diamond, and the planar electrode is connected with the positive metal electrode and the negative metal electrode through the interdigitated electrode. According to the invention, the planar electrode is introduced into the single crystal diamond wafer, so that efficient and rapid collection of ionized electron-hole pairs in the diamond is realized, and the responsivity and sensitivity of the detector are improved; two layers of metal, namely aluminum and gold, are adopted as electrodes, a good ohmic contact effect is achieved, the upper chromium can prevent the metal electrodes from being oxidized, and the service life of the device is prolonged.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a diamond particle detector electrode structure and a preparation method thereof. Background technique [0002] The current mainstream detector types mainly include gas detectors, scintillator detectors and semiconductor detectors. Semiconductor detectors have the advantages of high energy resolution and high detection efficiency, and have gradually replaced the other two detectors. As the name implies, the semiconductor detector is a new type of radiation detector with semiconductor as the medium. With the development and progress of semiconductor materials, the application of semiconductors in this field has been greatly promoted. First of all, for semiconductor materials, in the absence of foreign particle radiation, no background signal will be generated, and secondly, the carrier signal generated in its sensitive volume can drift directionally und...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224H01L31/115
Inventor 彭国令苗建国曹光宇冯文强范旅龙
Owner CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
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