35results about How to "Good thickness controllability" patented technology

A forming method of a multigraph comprises the following steps: providing an etched material layer; forming a plurality of discrete first hard mask layers on the etched material layer; forming a first side wall positioned around the first hard mask layer; forming a second side wall positioned around the first side wall, and the first side wall and the second side wall are made of different materials; repeating the technology forming the first side wall and the second side wall for a plurality of times, and forming multi-layer side wall structures around the first hard mask layer spaced by the first side wall and the second side wall; removing the first hard mask layer and the second side wall; using the first side wall to serve as a mask so as to etch the etched material layer, thereby forming the target graph. In the forming method of the multigraph, the target graph is small in linewidth, the target graph with controllable number can be realized without carrying out hard mask transfer for many times, so technology is simple.

The invention relates to a preparation method of a GaN epitaxial structure taking a hexagonal BN-graphene composite layer as a buffer layer, and belongs to the technical field of photoelectron. The method comprises the steps of polishing and cleaning a copper substrate; growing an h-BN-graphene composite layer on the copper substrate; growing an AlN layer on the h-BN-graphene composite layer by anatomic layer deposition method; and growing a GaN layer on the AIN thin layer by a metal organic matter chemical vapor deposition method. The h-BN-graphene composite layer is used as the buffer layerbetween the copper substrate and the GaN epitaxial layer, thus, the problems of defect dislocation, crack and the like caused by lattice mismatching and thermal mismatching between the substrate andthe epitaxial layer can be solved, the stress between the substrate and an epitaxial material is effectively reduced, and the quality of the GaN epitaxial layer is improved.

The invention relates to a production method of nitride epitaxial wafers and a gallium nitride laser device. The method comprises the following steps that 1, a copper substrate is polished and cleaned; 2, a graphene layer grows on the copper substrate; 3, the graphene layer growing on the copper substrate is transferred to target substrates; 4, an aluminum nitride thin layer grows on the graphene layer through an atomic layer deposition method; and 5, a GaN layer grows on the aluminum nitride thin layer through a metal organic matter chemical vapor deposition method. By means of the method, the nitride epitaxial wafers can grow on the different target substrates, the epitaxial wafers are transferred through the copper substrate, and therefore graphene is transferred to the different target substrates. The graphene layer is used as a buffer layer between the substrate and the GaN epitaxial layer, and the aluminum nitride layer is prepared through the atomic layer deposition method. Layer-by-layer growth of material atomic layers, good thickness controllability and high-precision film growth quality can be achieved, the large lattice mismatch problem between the substrate and the epitaxial layer is solved, the epitaxial layer quality is improved, and high-quality gallium nitride laser device can be obtained.

Disclosed is a preparation method of a lanthanum nickelate conductive metal oxide nanometer film. The LaNiO3 nanometer film preparation method comprises: firstly, the preparation of a target material, namely oxide powders of Ni2O3 and La2O3 of an analytical reagent are mixed in a ratio of 1:1 for implementing the preheating and then ball grinding, then the powders are pressed into a round sheet with the diameter of 50 mm and thickness of 4 mm, and finally the round sheet is sintered into a ceramic target at a high temperature of 1050 to 1150 DEG C; and secondly, the preparation of a film material, namely a radio frequency magnetic control sputtering method is adopted, all the parameters of a sputtering machine are adjusted, and the film with the required thickness is obtained through sputtering and deposition after a substrate reaches a certain temperature by in situ heating. The film manufactured in the method has high preferred orientation and good electric conductivity, the surface is compact and smooth, and the resistance rate under room temperature is about 1m Omega cm. The film can be used as a buffer layer for the preparation of high quality perovskite structure ferroelectric film material, or used as a bottom electrode of a ferroelectric film device.

The invention relates to a diamond-like carbon coating applied to the surface of a piston ring. The diamond-like carbon coating includes a base layer, a gradient layer and an amplitude modulation layer sequentially from bottom to top, wherein the amplitude modulation layer is a diamond-like carbon coating body doped with doping elements, the doping elements include one or more than two of Cr, Si and Ti, and the doping element content of the amplitude modulation layer changes periodically in a sine wave fluctuation mode along with the thickness of the amplitude modulation layer. Compared with a traditional single-layer structure or gradient-layer structure, as the doping element content of the amplitude modulation layer changes periodically in the sine wave fluctuation mode along with the thickness of the amplitude modulation layer, the amplitude modulation layer of the diamond-like carbon coating is of a multi-layer cycle modulation structure; and on the basis of the high abrasion resistance and low friction coefficient, stress in the coating can be lowered advantageously, the toughness of the coating can be improved, it is ensured that the thickness of the diamond-like carbon coating is increased, and the durability of the piston ring of the diamond-like carbon coating is also improved.

The invention provides a graphite sheet and metal layer composed thermally conductive sheet and its composing method. According to one embodiment of the invention, through a PVD aluminum deposition layer, the composition of a graphite sheet and other metal layers becomes possible so as to solve the difficulty with increasing the thickness of graphite sheet and thermally-conductive sheet and the problem of low thermal conductivity in the thickness direction. Based on these ideas, the invention aims to improve the overall heat capacity of the thermally conductive sheet and the comprehensive thermal conductivity in the thickness direction. The thermally conductive sheet of the invention can replace the product structure characterized by the adhesion of adhesive layers among multiple graphite sheet layers or between a graphite sheet and metal. Based on the prior art, the present invention combines the PVD aluminum plating technique and the metal hot-press diffusion method. Compared with the pure use of CVD or liquid plating method, the method of the invention is more efficient to obtain a composite metal layer with the same thickness. In addition, the once hard-to-obtain composite thickness and composite structure in the prior art can be more likely to be achieved. The composing method resolves the problem of how to accumulate composite metal layers with designated thicknesses and avoids the inherent defects of CVD and the liquid plating method.

The invention relates to a light-weighted high-intensity assembled wall. The light-weighted high-intensity assembled wall is characterized by comprising two parallel hollow boards made of metal materials or plastic materials, an adjustable connection assembly and a foaming rubber filler; the adjustable connection assembly is connected between the two hollow boards so as to connect the two hollow boards and adjust the distance between the two hollow boards; and the foaming rubber filler is arranged in an interval gap between the two hollow boards. By means of the scheme of the wall, standard, modular and factory-like production and manufacturing can be achieved, no building garbage is generated during assembly and application, even pieces of broken materials generated in the assembling and cutting process can be recycled, later decoration is not needed, decoration pollution is avoided, flying dust is not generated, the construction noise is low, and the light-weighted high-intensity assembled wall is environmentally friendly, safe and free of cracking and peeling off of paint; and the wall is good in leakage resistance, fire resistance, earthquake resistance and heat insulation performance, the building construction period is shortened quite advantageously, the construction efficiency is improved, and the construction environment is improved.

The invention discloses a compound-based semiconductor ultrathin substrate manufacturing method. The method includes 1) manufacturing a device in a compound-based epitaxial material layer; 2) and then forming an isolated table top of a device to be packaged on the right side of a compound semiconductor substrate sheet by means of lithography and etching methods, and etching to the depth of 3-10 micrometers; 3) coating a photoresist on the right side of the compound semiconductor substrate sheet; 4) growing 20 nm of protective medium silica on a temporary substrate sheet; 5) bonding the compound semiconductor substrate to the temporary substrate sheet; 6) performing rapid thinning, slow thinning, polishing on the compound-based semiconductor substrate sheet until the thickness of the compound-based substrate is thinned to 20-30 micrometers; 7) etching the back side of the substrate by means of plasma etching until the epitaxial layer outside the table top are fully etched; and 8) removing the adhesive and photoresist by organic solvent immersion to obtain a compound-based semiconductor device having a substrate thickness of 3 to 10 micrometers.

The invention discloses a hard alloy sintered anti-sticking coating adopting alcohol-soluble boron modified phenolic resin as well as a preparation method and application of the hard alloy sintered anti-sticking coating; the anti-sticking coating is formed by mixing solid isolation powder and a liquid adhesive; the solid isolation powder comprises the components in parts by weight: 18-53 parts ofzirconium oxide, 1-6 parts of cerium oxide, 1-5 parts of silicon oxide, 10-30 parts of crystalline flake graphite and 5-45 parts of fine carbon black; and the liquid adhesive comprises the componentsin parts by weight: 3-10 parts of alcohol-soluble boron modified phenolic resin, 1-5 parts of a thickening agent, 2-5 parts of a dispersing agent, 3-5 parts of an active agent, 2-5 parts of a curing agent, 0.1-1.5 parts of a defoaming agent and 250-300 parts of a diluent. The anti-sticking coating has enough bonding strength and hardness after being brushed, and a coating layer is not prone to falling off and chipping in the hard alloy product placing, transporting and charging processes; after sintering, the coating layer can still keep high hardness and bonding strength, and the influence ofwater on the stability of an alloy product during sintering is avoided.

The invention discloses a preparation method and application of an organic photovoltaic device active layer. The prepared organic photovoltaic device active layer comprises a donor layer, a donor-acceptor blending layer and an acceptor layer which are sequentially stacked from bottom to top, wherein the donor layer and the acceptor layer are prepared layer by layer through a flexible microstructure blade coating method, and the donor-acceptor blending layer is formed by mutual diffusion of donor molecules and acceptor molecules near an interface in the low-temperature annealing process. The method has the advantages that the acceptor material and the donor material use the same solvent to prepare the active layer layer by layer, the material utilization rate is close to 100%, material waste and environmental pollution are reduced, controllability and repeatability are high, the method can be applied to preparation of organic solar cell devices, the prepared organic solar cell devices are stable in property, and the method is suitable for large-scale production. and the method is suitable for large-area production.

The invention provides an anti-sticking coating for sintering of hard alloy as well as a preparation method and application thereof. The anti-sticking coating is formed by mixing solid isolation powder and a liquid adhesive. The solid isolation powder is prepared from, by weight, 22-40 parts of zirconium oxide, 5-8 parts of cerium oxide, 3-6 parts of magnesium oxide, 13-26 parts of crystalline flake graphite and 14-27 parts of fine carbon black. The liquid adhesive comprises the following components in parts by weight: 80-120 parts of water-soluble modified phenolic resin, 1.0-3.0 parts of a thickening agent, 3-6 parts of a dispersing agent, 4-8 parts of an active agent, 1-5 parts of a curing agent, 0.5-1.0 part of a defoaming agent and 80-120 parts of a diluent. A mass ratio of the solidisolation powder to the liquid adhesive is 1: (2.0-3.0). After the coating is brushed, bonding strength and hardness are high, and the coating is not prone to falling off and chipping in alloy productplacing, transporting and charging processes; and after sintering, the coating still maintains high hardness and bonding strength, and alloy carburization is avoided.

A process for forming a capacitor in a semiconductor device includes the step of forming a two-layer capacitor insulation film including a silicon oxynitride film and a tantalum oxide film. The step for forming the silicon oxynitride film is performed at a first substrate temperature, and the step of forming the tantalum oxide film uses a heat treatment performed at a second substrate temperature. The second substrate temperature is lower than the maximum of the first substrate temperature, to provide a higher capacitance per unit area and a lower leakage current in the capacitor.

A process for preparing a coated carbide layer on the surface of C-contained metallic alloy substrate incldues precoating a metallic alloy layer on the surface of said substrate, and heating to thermally diffuse the C element from substrate into the coated layer. Its advantages are high metallurgical adhesion, controllable thickness and high antiwear and anticorrosion performance.

The invention provides a method for forming an MIS structure. The method includes: step1, performing ion implantation and thermal annealing on a silicon substrate to form an N-type well or a P-type well; step 2, growing a SiO2 layer on the surface of the exposed silicon substrate; step 3, growing a metal Ti layer and a TiN layer on the SiO2 layer in sequence; and step 4, filling tungsten plugs in grooves of the exposed SiO2 layer, and performing planarization processing on the tungsten plugs, the metal Ti layer, and the TiN layer.