Compound-based semiconductor ultrathin substrate manufacturing method

A production method and compound technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of difficult operation, large error, poor substrate flatness, etc., achieve good thickness controllability, and reduce thickness error , The effect of simple process
CN106409671AInactive Publication Date: 2017-02-15DONGGUAN GUANGXIN INTPROP SERVICES CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
DONGGUAN GUANGXIN INTPROP SERVICES CO LTD
Publication Date
2017-02-15
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses a compound-based semiconductor ultrathin substrate manufacturing method. The method includes 1) manufacturing a device in a compound-based epitaxial material layer; 2) and then forming an isolated table top of a device to be packaged on the right side of a compound semiconductor substrate sheet by means of lithography and etching methods, and etching to the depth of 3-10 micrometers; 3) coating a photoresist on the right side of the compound semiconductor substrate sheet; 4) growing 20 nm of protective medium silica on a temporary substrate sheet; 5) bonding the compound semiconductor substrate to the temporary substrate sheet; 6) performing rapid thinning, slow thinning, polishing on the compound-based semiconductor substrate sheet until the thickness of the compound-based substrate is thinned to 20-30 micrometers; 7) etching the back side of the substrate by means of plasma etching until the epitaxial layer outside the table top are fully etched; and 8) removing the adhesive and photoresist by organic solvent immersion to obtain a compound-based semiconductor device having a substrate thickness of 3 to 10 micrometers.
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Description

technical field

[0001] The invention relates to a method for manufacturing a compound-based semiconductor ultra-thin substrate, which belongs to the technical field of semiconductor manufacturing.

[0002] technical background

[0003] With the continuous progress and development of terahertz technology, compound semiconductor materials have been widely used in the field of terahertz device technology due to their physical properties such as tailorable energy band structure and high electron mobility. Substrate loss cannot be ignored. Reducing the uniformity of the substrate thickness of terahertz solid-state devices is an important means to improve the performance of terahertz devices in the industry, and it is also a major technical problem.

[0004] The existing method of directly reducing the substrate thickness of terahertz devices has large operational errors in the actual process, poor substrate flatness, and causes operational troubles to subsequent processes. It is u...

Claims

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