Compound-based semiconductor ultrathin substrate manufacturing method

Abstract

The invention discloses a compound-based semiconductor ultrathin substrate manufacturing method. The method includes 1) manufacturing a device in a compound-based epitaxial material layer; 2) and then forming an isolated table top of a device to be packaged on the right side of a compound semiconductor substrate sheet by means of lithography and etching methods, and etching to the depth of 3-10 micrometers; 3) coating a photoresist on the right side of the compound semiconductor substrate sheet; 4) growing 20 nm of protective medium silica on a temporary substrate sheet; 5) bonding the compound semiconductor substrate to the temporary substrate sheet; 6) performing rapid thinning, slow thinning, polishing on the compound-based semiconductor substrate sheet until the thickness of the compound-based substrate is thinned to 20-30 micrometers; 7) etching the back side of the substrate by means of plasma etching until the epitaxial layer outside the table top are fully etched; and 8) removing the adhesive and photoresist by organic solvent immersion to obtain a compound-based semiconductor device having a substrate thickness of 3 to 10 micrometers.

Description

technical field [0001] The invention relates to a method for manufacturing a compound-based semiconductor ultra-thin substrate, which belongs to the technical field of semiconductor manufacturing. [0002] technical background [0003] With the continuous progress and development of terahertz technology, compound semiconductor materials have been widely used in the field of terahertz device technology due to their physical properties such as tailorable energy band structure and high electron mobility. Substrate loss cannot be ignored. Reducing the uniformity of the substrate thickness of terahertz solid-state devices is an important means to improve the performance of terahertz devices in the industry, and it is also a major technical problem. [0004] The existing method of directly reducing the substrate thickness of terahertz devices has large operational errors in the actual process, poor substrate flatness, and causes operational troubles to subsequent processes. It is u...

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is the problem of poor substrate flatness and large error caused by direct thinning to manufacture terahertz devices. The thinning rate must be reduced to a very low level, and because the substrate is as thin as less than 10 microns, it is very difficult to operate in subsequent processes such as debonding, scribing, etc.

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