3 results about "Charged current" patented technology

The application belongs to the technical field of spintronics, and specifically forms a vortex of electron drift velocity at the interface of a magnetic layer and a metal layer by a difference in conductivity, further utilizes a spin vortex coupling effect to realize conversion of charge current to spin current, and thereby drives a magnetic moment to flip through a spin-orbit moment. As an example, the application deposits a Cu layer with high conductivity on a PtCo alloy layer with lower conductivity through magnetron sputtering, and constructs a heterostructure with a PtCo / Cu interface spin vortex coupling effect. By increasing the thickness of the Cu layer to improve the conductivity of the Cu layer, a significant improvement in the orbital moment efficiency can be observed. Not only does this provide valuable experimental evidence for in-depth understanding of the physical mechanism of interface-induced spin current, but also enriches the conversion approach between charge current and spin current, and opens up a simple and efficient new path for the research and design of a new generation of spintronic devices.

The application discloses a spin terahertz emitter and a chiral regulation method and a preparation method thereof, and belongs to the field of terahertz emission. The spin terahertz emitter is a three-layer structure including a ferromagnetic material layer, a non-ferromagnetic material layer and an antiferromagnetic layer. The antiferromagnetic layer adopts a preset crystal phase NiO single crystal antiferromagnetic material, CrSb or Mn3Sn. Under the irradiation of a femtosecond laser, the antiferromagnetic layer generates a laser impact magnetic moment. The precession of the laser impact magnetic moment generates a spin polarization current. The spin polarization current is injected into the non-ferromagnetic layer to generate a transient charge current, and then radiate terahertz, thereby realizing efficient spin terahertz radiation. Further, the magnetic moment direction of the ferromagnetic material layer in the spin terahertz emitter is reversed by rotating the direction of an external magnetic field or by a spin-orbit moment effect, thereby realizing efficient regulation of terahertz chirality.

The invention discloses a symmetry-controlled double-layer Van der Waals nanobelt device, a design method and application, and belongs to the technical field of nanoelectronics. The design method comprises the steps that based on a single-layer JGNR, different alignment conditions of atoms between an upper layer and a lower layer are considered, and bl-JGNR van der Waals structures of different stacking modes are built; the bl-JGNR van der Waals structures in different stacking modes are used for respectively building a double-layer van der Waals nanobelt device; each kind of double-layer Van der Waals nanobelt device only comprises one kind of bl-JGNR Van der Waals structure. The built double-layer Van der Waals nanobelt device obtains multiplied spinning current and charge current while maintaining the original spinning resolution current property, in addition, through cooperative regulation and control of uniaxial compression strain, spinning electrons are driven to move by utilizing temperature difference, the spinning current can be expanded again, the charge current can be inhibited to the maximum extent, and the performance of the device is improved. The effect is wide in application temperature range, waste heat is effectively utilized to complete thermoelectric conversion, and energy waste is reduced.