8 results about "Charged current" patented technology

The invention relates to a powder metal particle detection method, device and system, and the method comprises the steps: uniformly mixing a conductive liquid with to-be-detected powder to obtain a mixed liquid; wherein an electrode part is arranged in the mixed liquid, and the temperature of the conductive liquid is greater than or equal to a preset electrolysis temperature; a preset electrolysis voltage is applied to the electrode component to form an electrolysis path, and the electrolysis path is used for electrolysis of metal particles in the to-be-detected powder; and detecting the charging current of the electrolysis path, and determining the information of the metal particles contained in the to-be-detected powder according to the charging current and the preset electrolysis voltage. According to the embodiment of the invention, the detection efficiency and detection reliability of the metal particles can be improved.

The application belongs to the technical field of spintronics, and specifically forms a vortex of electron drift velocity at the interface of a magnetic layer and a metal layer by a difference in conductivity, further utilizes a spin vortex coupling effect to realize conversion of charge current to spin current, and thereby drives a magnetic moment to flip through a spin-orbit moment. As an example, the application deposits a Cu layer with high conductivity on a PtCo alloy layer with lower conductivity through magnetron sputtering, and constructs a heterostructure with a PtCo / Cu interface spin vortex coupling effect. By increasing the thickness of the Cu layer to improve the conductivity of the Cu layer, a significant improvement in the orbital moment efficiency can be observed. Not only does this provide valuable experimental evidence for in-depth understanding of the physical mechanism of interface-induced spin current, but also enriches the conversion approach between charge current and spin current, and opens up a simple and efficient new path for the research and design of a new generation of spintronic devices.

The application discloses a spin terahertz emitter and a chiral regulation method and a preparation method thereof, and belongs to the field of terahertz emission. The spin terahertz emitter is a three-layer structure including a ferromagnetic material layer, a non-ferromagnetic material layer and an antiferromagnetic layer. The antiferromagnetic layer adopts a preset crystal phase NiO single crystal antiferromagnetic material, CrSb or Mn3Sn. Under the irradiation of a femtosecond laser, the antiferromagnetic layer generates a laser impact magnetic moment. The precession of the laser impact magnetic moment generates a spin polarization current. The spin polarization current is injected into the non-ferromagnetic layer to generate a transient charge current, and then radiate terahertz, thereby realizing efficient spin terahertz radiation. Further, the magnetic moment direction of the ferromagnetic material layer in the spin terahertz emitter is reversed by rotating the direction of an external magnetic field or by a spin-orbit moment effect, thereby realizing efficient regulation of terahertz chirality.

A device includes a magnetic tunnel junction; a conductive spacer with low spin-orbit coupling and high mean orbital moment diffusion length; and a conductive track able to generate an orbital moment current from a charge current and having a weak spin-orbit coupling.

The present application relates to a method, device, and system for detecting metal particles in powdered material. The method comprises: uniformly mixing a conductive liquid with a powdered material to be tested to obtain a mixed liquid; wherein an electrode component is disposed in the mixed liquid, and the temperature of the conductive liquid is greater than or equal to a preset electrolysis temperature; applying a preset electrolysis voltage to the electrode component to form an electrolysis path, which is used to electrolyze metal particles in the powdered material to be tested; detecting a charging current in the electrolysis path, and determining information about the metal particles contained in the powdered material to be tested based on the charging current and the preset electrolysis voltage. Embodiments of the present application can improve the efficiency and reliability of metal particle detection.

The invention provides a method for calculating interface polarization charge and current distribution based on a reflection coefficient, and relates to the technical field of computational electromagnetism. Comprising the following steps: establishing reflection coefficient-dielectric parameter mapping, directly associating reflection characteristics of electromagnetic waves with intrinsic parameters of a medium through a reflection coefficient formula, and laying a physical foundation of polarization analysis; and reconstructing an interface electromagnetic field, and determining electric field distribution on two sides of the interface and corresponding polarization intensity by using the boundary condition and the constitutive relationship. Determining the distribution rule of an electromagnetic field in a medium, converting a macroscopic electric field into spatial description of polarization intensity, and providing intermediate variables for charge and current calculation; polarization dynamic response is quantized, and interface polarization charge density and polarization current density are derived through space and time derivatives of polarization intensity. And converting the theoretical model into an actual physical quantity, and revealing a dynamic response mechanism of the charge current when the electromagnetic wave interacts with the medium.

This invention belongs to, but is not limited to, the field of magnetic confinement fusion technology, and particularly relates to a method and system for feedback control of tearing mode instability, comprising: S1, driving and regulating a spiral current to provide a larger m / n perturbation field component; S2, regulating the spiral current in the scraped layer to achieve tearing mode control. This invention uses a plasma spiral loop to generate a perturbation field and applies feedback regulation to control the tearing mode. The external resonant perturbation field generated by the plasma-carried current is unaffected by neutron irradiation damage. Since the spiral current mainly flows along the magnetic field lines of the scraped layer, it has a helicity similar to that of the rational surface magnetic field lines, resulting in a resonant magnetic perturbation spectrum with good resonance characteristics with the plasma. Compared to traditional coil-generated perturbation fields, this current is located in the plasma scraped layer, closer to the tearing mode, with smaller radial attenuation; and the current flows along the magnetic field lines of the scraped layer, resulting in a higher resonant component proportion and higher overall effective intensity.

The invention discloses a symmetry-controlled double-layer Van der Waals nanobelt device, a design method and application, and belongs to the technical field of nanoelectronics. The design method comprises the steps that based on a single-layer JGNR, different alignment conditions of atoms between an upper layer and a lower layer are considered, and bl-JGNR van der Waals structures of different stacking modes are built; the bl-JGNR van der Waals structures in different stacking modes are used for respectively building a double-layer van der Waals nanobelt device; each kind of double-layer Van der Waals nanobelt device only comprises one kind of bl-JGNR Van der Waals structure. The built double-layer Van der Waals nanobelt device obtains multiplied spinning current and charge current while maintaining the original spinning resolution current property, in addition, through cooperative regulation and control of uniaxial compression strain, spinning electrons are driven to move by utilizing temperature difference, the spinning current can be expanded again, the charge current can be inhibited to the maximum extent, and the performance of the device is improved. The effect is wide in application temperature range, waste heat is effectively utilized to complete thermoelectric conversion, and energy waste is reduced.