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High-speed narrow pulse modulation driving power supply for semiconductor laser

A technology for driving power supplies and lasers, which is applied to semiconductor lasers, lasers, devices for controlling output parameters of lasers, etc., can solve problems such as inability to modulate pulse signals and limited parameter characteristics, and achieve controllable pulse peaks, high frequency, and pulse narrow effect

Active Publication Date: 2010-11-24
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

The semiconductor laser driven by an avalanche transistor drive power supply, the leading edge, pulse width, frequency, peak current and optical pulse waveform of the output laser pulse are also limited by the parameter characteristics of the avalanche transistor, and it cannot be modulated according to different parameters of the semiconductor laser. pulse signal

Method used

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  • High-speed narrow pulse modulation driving power supply for semiconductor laser
  • High-speed narrow pulse modulation driving power supply for semiconductor laser
  • High-speed narrow pulse modulation driving power supply for semiconductor laser

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Embodiment Construction

[0024] The present invention will be further described below in conjunction with the embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.

[0025] See figure 1 , the present invention is used for the high-speed narrow pulse modulation driving power supply of semiconductor laser, including the driving circuit and high-precision temperature control circuit of semiconductor laser, and the high-precision temperature control circuit is not shown in the figure.

[0026] The driving circuit of the semiconductor laser includes an external output +15V third power supply V3, a first power supply V1, and a DC bias power supply V2, and a high-speed MOSFET Q is used as a switch. The driving chip of this high-speed MOSFET is called a driver integrated block U, The second pin of the drive integrated block U is connected to the "external trigger input"; the first and eighth pins of the driver integrated block U are empty, the ...

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PUM

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Abstract

The invention discloses a high-speed narrow pulse modulation driving power supply for a semiconductor laser. The high-speed narrow pulse modulation driving power supply comprises a semiconductor laser driving circuit and a high-precision temperature control circuit, wherein the semiconductor laser driving circuit adopts a high-speed MOSFET as a switch. The driven semiconductor laser can output the required laser pulse with high frequency, quick advancing front, narrow pulse width, controllable pulse peak and smooth waveform according to the parameters of the semiconductor laser by changing the power supply voltage, resistance and capacitance in the driving power supply circuit.

Description

technical field [0001] The invention relates to a semiconductor laser, in particular to a high-speed narrow pulse modulation driving power supply for the semiconductor laser. Background technique [0002] Semiconductor lasers are widely used in many fields such as industry, military affairs, and scientific research, especially in the fields of laser ranging, laser radar, and laser communication. For example, in laser ranging, the rising edge, pulse width, and peak power of the laser pulse are closely related to the measurement accuracy, ranging dead zone, and the farthest ranging capability. The faster the rising edge of the laser pulse is, the better the measurement accuracy is, the narrower the pulse width is, the better the distance measurement dead zone is minimized, and the higher the peak power is, the better it is to increase the farthest distance measurement capability. [0003] The existing narrow pulse (nanosecond level) laser drive power supply often uses avalanc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/042H01S5/06
Inventor 杨燕俞敦和吴姚芳侯霞
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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