55 results about "Avalanche transistor" patented technology

The invention provides a narrow pulse high-current semiconductor laser device driving circuit, which includes a laser, a high frequency pulse control circuit and a driving circuit. The driving circuit includes a semi-conductor high speed switch module and a tank circuit, and the output end of the high frequency pulse control circuit is connected with the input end of the semi-conductor high speed switch module, and the input end of the high frequency pulse control circuit is connected with the input end of the tank circuit, and both ends of the laser are respectively connected with the semi-conductor high speed switch module of the tank circuit. The constant-current source charges the energy storage capacity through the protection resistor, and the energy storage capacity discharges, and the high frequency pulse control circuit outputs narrow pulse to trigger conduction of the avalanche transistor, and the energy storage capacity outputs high-current for the laser to produce pulsed laser, then the avalanche transistor cuts off to wait for input of novel narrow pulse.The light impulse width of the product provided by the invention is between 5ns-25ns, and the precision of the modulation is 5ns, thereby realizing drive current with maximum peak value of 45A is adjustable in repeat frequency of 1 kHz-10kHz, and the modulation precision is 1kHz.

The invention relates to an implementing method of a high-voltage square-wave generator. The generator comprises a high-voltage DC (Direct Current) source, a resistor, an energy storage capacitor, a triggering pulse width adjusting module, a rising edge circuit, a falling edge circuit and a synchronous control triggering module; the rising edge circuit comprises a solid switch MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and an optical coupling isolation driving circuit; the falling edge circuit comprises a solid switch MOSFET circuit and avalanche transistor string; the high-voltage DC source, the resistor, the energy storage capacitor, the triggering pulse width adjusting module, the solid switch MOSFET and the optical coupling isolation driving circuit are connected to the avalanche transistor string in sequence. The implementing method comprises the steps of: (1) pre-charging the energy storage capacitor by the high-voltage DC source; (2) converting an outer triggering signal into a pulse width adjustable square wave signal by the triggering pulse width adjusting module; (3) controlling the optical coupling isolation driving circuit to drive the MOSFET to be in on-state so as to charge a load and form the rising edge circuit; (4) driving the MOSFET and avalanche transistors of the falling edge circuit to be in on-state so as to cut off an output pulse rapidly and form the falling edge circuit.

The invention discloses a large-amplitude picosecond-level narrow pulse generating circuit, and the circuit comprises a triggering signal, an avalanche transistor Marx cascading pulse generation circuit and a step recovery diode pulse shaping circuit. The avalanche transistor Marx cascading pulse generation circuit receives the triggering signal, and the step recovery diode pulse shaping circuit is connected with the avalanche transistor Marx cascading pulse generation circuit. The avalanche transistor Marx cascading pulse generation circuit enables an energy storage capacitor in an avalanche unit to generate a large-amplitude pulse in a mode of parallel charging and series charging, and then generates a large-amplitude narrow pulse through the step recovery characteristics of a step recovery diode. The front and rear edges are steeper, and the pulse amplitude is within the range from 20V to 30V. The pulse width is lower than 200ps, thereby meeting the demands of pulse drive application of a semiconductor laser.

The invention aims to provide a picosecond narrow-pulse signal source with high output voltage, high repetition frequency and adjustable output voltage for an impulse pulse radiating antenna, and the picosecond narrow-pulse signal source is simple in structure and stable and reliable in operation. According to the technical scheme adopted to achieve the purposes, a picosecond pulse generator provided with an avalanche transistor and a Marx circuit and based on micro-strip transmission comprises circuit units T1-Tn, a DC power source, a trigger signal generation and control module and a stepping motor, wherein a contact x is fixed on a rotating shaft of the stepping motor; contacts 1-(n-1) are distributed on the periphery of the rotating shaft of the stepping motor; when the rotating shaft of the stepping motor rotates, the contact x is driven to rotate and is sequentially contacted with all the contacts 1-(n-1).

The invention discloses a remote laser distance measurement target indicator in the field of laser distance measurement. The remote laser distance measurement target indicator comprises a laser transmitter, a laser receiver, an avalanche transistor grid bias power supply, a semiconductor pumping source power supply, a laser Q-switching power supply, a laser energy meter, a communication interface and a signal processor. Based on the time uncorrelated principle of signals and noise, weak target signals in the noise can be distinguished, and the distance measurement capacity for remote distance measurement is achieved; by the adoption of a semiconductor pumping source laser, high-frequency and multiple-pulse laser transmitting is achieved under the condition of not increasing hardware spending; switching of the two functions of laser distance measurement and target indication is achieved through software control; due to improvements on a distance measurement method and a control method, the weight of equipment is reduced directly and indirectly, the size of the equipment is reduced, the predicated weight and size are only one quarter that of a traditional xenon lamp pumping source laser distance measurement machine, and the remote laser distance measurement target indicator can be used for remote distance measurement.

A photodetector disclosed herein comprises an avalanche transistor having a reference junction structure in which temperature characteristics of a current amplification factor are about the same as those of an avalanche photodiode and which is reverse-biased, and a current injection junction structure which injects a reference current to the reference junction structure and which is forward-biased. Voltages to be applied to the avalanche photodiode and the reference junction structure are controlled so that the amplification factor of the reference current amplified in the reference junction structure is retained at a predetermined value, whereby the temperature characteristics of the photodetector utilizing an avalanche effect can be stabilized.

The present invention discloses an adjustable pulse width pulse generating circuit for a semiconductor laser. The adjustable pulse width pulse generating circuit comprises trigger signals, an avalanche transistor pulse generating circuit and a step recovery diode shaping circuit; the avalanche transistor pulse generating circuit receives the trigger signals; and the step recovery diode shaping circuit is connected with the avalanche transistor pulse generating circuit. According to the adjustable pulse width pulse generating circuit for the semiconductor laser of the invention, the avalanche characteristic of an avalanche transistor and the step characteristic of a step recovery diode are utilized to generate large-amplitude narrow pulse signals; and the pulse width of the narrow pulse signals can be as low as 165ps and can be adjusted. The adjustable pulse width pulse generating circuit for the semiconductor laser can be conveniently applied to the driving of the semiconductor laser.

The invention belongs to the technical field of semiconductor lasers, and particularly relates to a pulse drive circuit of a semiconductor laser based on an avalanche transistor. The pulse drive circuit comprises an outlaid high-voltage adjustable direct-current power supply, a charge-discharge return circuit which comprises a lasing diode, an energy storage capacitor, and a avalanche transistor a programmable delayer, a drive circuit for the avalanche transistor. In the charge-discharge return circuit, an emitting electrode of the avalanche transistor is grounded through a sampling resistance,a collecting electrode is connected with the energy storage capacitor, the other end of the energy storage capacitor is connected with the cathode of the lasing diode and the anode of the lasing diode is grounded. The pulse drive circuit is adopted that the capacitance discharges quickly toward the lasing diode through the avalanche transistor to produce the quick drive current in order to gain the quick optical pulse. A rising edge of the pulse current is less than 5 nanoseconds and the pulse width is from 20 n s to 1 u s, and the peak value of the pulse current is continuously adjustable from 10 amperes to 100 amperes. Due to the fact that the pulse drive circuit comprises the precise delayer, the pulse drive circuit is suitable for the multi-path trigger device in need of accurate synchronization.

The invention relates to the field of high-power microwaves, and provides an ultra-narrow pulse generation device combined feeding device and an ultra-narrow pulse generation device combined feeding method for solving the problem existing in the prior art. The ultra-narrow pulse generation device combined feeding device and the ultra-narrow pulse generation device combined feeding method improve the energy conversion efficiency and high-repetition-frequency output power of an ultra-narrow pulse source based on an avalanche transistor, and provide a better solution for arrayed application. According to the ultra-narrow pulse generation device, the time that a power supply end high-level signal is ahead of an ultra-wideband narrow pulse voltage signal is greater than the complete resonant charging time of an arbitrary stage RC charging loop; an ultra-wideband narrow pulse voltage Vf is input to one end of a first stage energy storage capacitor which is away from a second stage energy storage capacitor, a first stage avalanche transistor circuit discharges, and an output voltage value of an output end of a first stage avalanche discharge loop is Vf+V without considering circuit loss; and an output voltage value of an output end of an i stage avalanche discharge loop is Vf+i*V.

The invention discloses a high-amplitude high-repetition-frequency fast pulse generation circuit based on an avalanche transistor, and the circuit mainly comprises an isolation device, charging capacitors and a fast switch, the whole circuit charges the charging capacitors in parallel through the isolation device, and the charging capacitors are connected in series to discharge to generate high-amplitude pulses after the switch is switched on; the isolation device can effectively isolate high-amplitude pulses; the circuit provided by the invention has the characteristics of high nanosecond/sub-nanosecond pulse isolation, strong insulation capability, high charging speed and the like, and is particularly suitable for the design of advanced Marx circuits to generate nanosecond/sub-nanosecondpulses with higher amplitude. The isolation circuit combining magnetic beads and the resistor can meet the requirements of pulse isolation and charging speed, and meets the requirement of generatinghigh-amplitude and high-repetition-frequency nanosecond/sub-nanosecond pulses.

The invention relates to an optical light splitting device for receiving three wave bands through a common window and application of the optical light splitting device in handheld, vehicle-mounted andairborne distance measurement camera shooting white light observation equipment and distance measurement double-path camera shooting equipment. The device comprises a common lens group, a composite prism, a beam splitter prism, an avalanche transistor detector, a near-infrared detector and a visible light detector. External light passes through the common lens group and is refracted into two paths of light by the composite prism, wherein one path of light enters the avalanche transistor detector, and the other path of light enters the beam splitter prism and then is refracted into two paths of light, and the two paths of light respectively enter the near-infrared detector and the visible light detector for imaging. The device is simple in structure, small in size and light in weight, achieves the three functions of distance measurement, visible light imaging and near-infrared light imaging at the same time, and is wide in application range and high in adaptability.

The invention provides an amplitude increasing and width reducing circuit unit and a pulse signal generating circuit and generator comprising the amplitude increasing and width reducing circuit unit. According to the amplitude increasing and width reducing circuit unit, two avalanche transistors which are cascaded are used as a basic unit circuit to construct the nanosecond balance pulse signal generator, and compared with a pulse generating circuit composed of a single avalanche transistor, pulse signals generated by the nanosecond balance pulse signal generator are large in amplitude, the pulse front edges are steep, and circuit reliability is high.

The invention provides a rapid leading edge step pulse generator at least comprising one pulse signal generating circuit. The pulse signal generating circuit comprises a charging and discharging circuit, an avalanche transistor drive pulse forming circuit, a step recovery diode pulse forming circuit and a coupling circuit, wherein the charging and discharging circuit comprises a third charging and discharging capacitor C3, the avalanche transistor drive pulse forming circuit comprises an avalanche transistor Q2, the step recovery diode pulse forming circuit comprises a first step recovery diode D1, and the coupling circuit comprises a fifth coupling capacitor C5 and a sixth coupling capacitor C6. The rapid opening and closing features of a radio frequency transistor, the avalanche effect of the avalanche transistor, the step features of the step recovery diode and the like are utilized by the rapid leading edge step pulse generator for generating wide rapid leading edge step pulse signals, the leading edge is steep, the lagging edge is relatively slow, the lagging edge almost has no high-frequency overshoot, when the generator is connected with a transmitting antenna, high-frequency ringing cannot be introduced, and the shallow detection capability of the system is easily improved.

The invention relates to an optical light splitting device for receiving double wave bands through a common window and application of the optical light splitting device in camera shooting distance measuring equipment. The device comprises a common lens group, a reflector group, an imaging lens group, an avalanche transistor detector and a television detector, wherein the reflector group is arranged between the common lens group and the imaging lens group, and the common lens group, the imaging lens group and the television detector are arranged along the same optical axis; the two reflectors of the reflector group are parallel to each other and are arranged at two ends of the common lens group at a certain angle with the optical axis; the avalanche transistor detector is over against the light emitting surface of one reflector; the external incident main light penetrates through the shared lens group and the imaging lens group and then enters the television detector to be imaged, so the photographing or camera shooting function is achieved. And after penetrating through the shared lens group, other incident light rays from the outside are reflected to the avalanche transistor detector by the reflector group, so that a distance measuring function is realized. The device has the advantages of being simple in structure, low in manufacturing cost, small in size, light in weight, easy to carry, wide in application range, high in adaptability and the like.

The invention discloses a multi-narrow-pulse laser light source and an achieving method thereof. The laser light source comprises a multi-narrow-pulse signal generator, a power source system, an avalanche transistor, a laser diode and an adjustable potentiometer, wherein an output end of the power source system is connected with an input end of the multi-narrow-pulse signal generator, and the other output end of the power source system is connected with an input end of the laser diode; an input end C of the avalanche transistor is connected with an output end of the laser diode, the other output end B is connected with an output end of the multi-narrow-pulse signal generator, and an output end E of the avalanche transistor is connected with the adjustable potentiometer. The multi-narrow-pulse laser light source has the advantages that multi-narrow-pulse signals generated by the multi-narrow-pulse signal generator are used for controlling connection and disconnection of the avalanche transistor, so that the laser diode driven by the avalanche transistor can generate multi-narrow-pulse laser having the same repeating frequency and pulse width with the multi-narrow-pulse signals; and a data transformation service (DTS) system based on the multi-narrow-pulse laser light source can overcome the contradiction of power increase and nonlinearity of the DTS system during temperature measuring, and the aim of long distance measuring can be achieved.

This invention relates to a fast scanning voltage ramp generator comprising at least one chain of N two-pole avalanche transistors in series (T1-T8; T11-T18) and a set of N+1 zener diodes (D1-D9) in series between a high voltage power supply (HV) and the ground, where N is an integer number >=2. This invention also relates to a streak camera using this type of generator.

The invention discloses a frequency precision adjustable pulse generation circuit for a semiconductor laser. The frequency precision adjustable pulse generation circuit comprises a microcontroller, aDDS module and an avalanche transistor pulse generation circuit. The microcontroller is connected with the DDS module. The DDS module is connected with the avalanche transistor pulse generation circuit. The DDS module serves as a trigger signal, and the avalanche transistor pulse generation circuit receives the trigger signal so as to excite a capacitor to generate a pulse signal. According to theinvention, the microcontroller is used to write different frequency control words to an AD9851 chip in the DDS module through Keil software and STC-ISP software, so as to generate different frequencies as trigger signals to be provided to the avalanche transistor pulse generation circuit of the latter stage, and thus, the pulse signals of different frequencies are obtained. The adjustable frequency range is 0 to 60 MHz, the pulse width can also be adjusted by changing the supply voltage, and easy application to the driving of the semiconductor laser can be realized.

A single photon detection circuit is described that includes a germanium photodiode that is configured with zero voltage bias to avoid dark current output when no photon input is present and also is configured to respond to a single photon input by generating a photovoltaic output voltage. A single electron bipolar avalanche transistor (SEBAT) has a base emitter junction connected in parallel with the germanium photodiode and is configured so that the photovoltaic output voltage triggers an avalanche collector current output.

The invention discloses a laser measurement device capable of performing measurement function switching during measurement. The laser measurement device comprises a thermal frequency stabilization He-Ne laser (1), a measuring unit (16) and a signal processing system, lights emitted from the thermal frequency stabilization He-Ne laser (1) pass the measuring unit (16) and then are sent to the signalprocessing system, processing is performed, and a measurement result is obtained. The laser measurement device is characterized in that the measuring unit (16) comprises a reflecting mirror (24) anda light shielding plate (23) which can be changed in position; when an interference measurement function is used, a light beam returned by a target lens (4) is reflected via the reflecting mirror (24)and then passes a polarizer (5) and an avalanche transistor (6); when an absolute distance measurement function is used, the reflecting mirror (24) is changed in position and is not located on a light path of the light beam returned by the target lens (4), the light beam returned by the target lens (4) passes a polarizer (11) and is received by an avalanche transistor (12), the light shielding plate (23) is changed in position and is located between a polarizing beam splitter (8) and a pyramidal prism (10), and a light path of a light beam transmitted from the polarizing beam splitter (8) isshielded.

The present invention discloses an avalanche transistor based ultra wideband pulse generation circuit. The system comprises an oscillation source, an energy storage element and a high-speed switch. With reference to a principle of an MARX circuit, a method of increasing an output pulse amplitude by means of cascading is provided; in addition, the improved circuit adopts a synchronous trigger manner, so that inter-stage delay of the MARX circuit is overcome; and the system adopts a logic circuit solution or a CPLD solution so as to generate a demanded trigger signal for a pulse generator. The UWB pulse generation circuit with one-order Gaussian pulse as the target has the characteristics of high data transmission rate, lower power consumption, high perspective capability and so on, and can be widely applied to multiple fields like military, rescue, medical care, measurement and so on.

The invention discloses an ultrahigh frequency electromagnetic pulse sensor characteristic calibration method and system, and belongs to the technical field of sensor characteristic calibration. According to the ultrahigh-frequency electromagnetic pulse sensor characteristic calibration method based on the single-cone antenna, a mirror single-cone calibration system is formed by constructing a high-power subnanosecond leading-edge pulse source and the mirror single-cone antenna, the high-power subnanosecond leading-edge pulse source is an all-solid-state pulse source based on an avalanche transistor, and the mirror single-cone antenna is an all-solid-state pulse source based on an avalanche transistor. The ultrahigh-frequency electromagnetic pulse sensor calibration device can be used for realizing calibration of an ultrahigh-frequency electromagnetic pulse sensor, so that the leading edge of an output pulse reaches a hundred ps magnitude and the peak voltage reaches a kV magnitude, a high-field-intensity subnanosecond electromagnetic pulse standard field environment can be generated, and calibration of a high-amplitude fast-leading-edge ultrahigh-frequency electromagnetic pulse sensor can be realized. Therefore, the GIS comprehensive pulse radiation environment measurement level is greatly improved, the calibration problem of the high-amplitude fast-leading-edge ultrahigh-frequency electromagnetic pulse measurement sensor is solved, and the scheme is simple, practical, feasible and convenient to implement.

The invention discloses a pulse power supply based on an avalanche transistor Marx generator and an LTD circuit. The pulse power supply comprises M stages of LTD circuits comprising m partitions, wherein each partition comprises N stages of Marx circuits, each stage of Marx circuit comprises n avalanche transistors connected in series, a trigger unit is connected with a trigger input end of each stage of LTD circuit, and a high-voltage DC power supply 1 is connected with a charging loop of each stage of LTD circuit. The secondary side of the M-stage LTD circuit outputs high-voltage nanosecond pulses in series. According to the invention, by adopting the M-stage LTD circuit with m partitions, the output end of the Marx circuit of each partition is connected with the primary side of the LTD circuit of each stage, wherein the M-stage LTDs are connected to the secondary side in series to output high-voltage nanosecond pulses with the fast leading edge repetition frequency, and the output voltage of n avalanche tubes is greatly increased than that of single-stage Marx circuit of single-avalanche tube. In addition, the two ends of each avalanche transistor are connected in parallel with the voltage-sharing resistors with large resistance values for voltage sharing, so that uneven voltage division of the avalanche transistors is prevented, the output pulse is stable and efficient in voltage and current, and the conduction state of the avalanche transistors in each partition Marx circuit is greatly improved.

The present invention firstly relates to a device for generating noise signals. Said device comprises at least one avalanche diode which is arranged in such a way that it is reverse-biased during intended operation of the device. Moreover, the invention relates a method for generating a noise signal by means of such a device and to a use of said device and to a method for evaluating a type of an avalanche diode or of an avalanche transistor.

The invention relates to an ultraviolet avalanche diode imaging array pixel, an application method thereof and an avalanche diode imaging array comprising the same. The ultraviolet avalanche diode imaging array pixel comprises a plurality of avalanche diode detectors which are connected in parallel; each avalanche diode detector comprises a photodiode, a film resistor and a metal layer which are orderly connected; and in each avalanche diode detector, an n-type semiconductor of the photodiode and a contact electrode are connected, electric connection is formed among the contact electrodes of all the avalanche diode detectors in the imaging pixel to serve as an electrode, an intact metal layer is shared by all the avalanche diode detectors and another electrode of the ultraviolet avalanchediode imaging array pixel is formed by the metal layer. The avalanche diode imaging array is composed of a plurality of ultraviolet avalanche diode imaging array pixels. The ultraviolet avalanche diode imaging array pixel disclosed by the invention has the effective effects that: the problem of too low yield caused by big defect density of a material per se is overcome and the yield of the ultraviolet avalanche diode imaging array pixel with a novel structure can approach and reach to 100%.

The invention discloses a self-adaptive avalanche transistor pulse generator. The self-adaptive avalanche transistor pulse generator comprises an avalanche transistor pulse generation circuit, and also comprises a leakage current sampling circuit, a comparison circuit and a regulated power supply circuit, wherein the comparison circuit is used for comparing voltage of the leakage current sampling circuit with size of reference voltage Vref value to form an output signal; the regulated power supply circuit is used for applying voltage to the avalanche transistor pulse generation circuit, and is provided with a control end for receiving the output signal of the comparison circuit to realize voltage control of the regulated power supply circuit; the leakage current sampling circuit is serially connected into a collector loop of a transistor of the avalanche transistor pulse generation circuit for sampling leakage current of the transistor; the input end of the compassion circuit is electrically connected with the leakage current sampling circuit; the output end of the comparison circuit is connected with the control end of the regulated power supply circuit; the regulated power supply circuit is connected with the avalanche transistor pulse generation circuit. Discreteness influence on parameters of the transistor is well solved without adjusting power supply voltage manually, and the self-adaptive avalanche transistor pulse generator is suitable for batch production.