9 results about "Avalanche transistor" patented technology

This invention discloses a high-amplitude, high-repetition-rate sub-nanosecond pulse source based on a parallel incremental structure of avalanche transistors, comprising: sequentially connecting a first microstrip line T1, a charging capacitor C1, a second microstrip line T2, and an avalanche transistor Q1; connecting the avalanche transistor Q1 to a third microstrip line T3; sequentially connecting the third microstrip line T3, a charging capacitor C2, a fourth microstrip line T4, and the avalanche transistor Q2; and connecting the charging capacitors C2 and C1 to a power supply E. c Connection. This invention, through the use of a parallel incremental structure of avalanche diodes, effectively increases the current-carrying capacity of a high-amplitude pulse source while minimizing the adverse effects of increased microstrip line width on the output pulse waveform. Furthermore, the parallel incremental structure of avalanche diodes reduces the number of avalanche diodes required, saving costs.

A high-voltage Gaussian pulse generation circuit based on avalanche transistors comprises N Marx circuits which are connected in parallel, and each Marx circuit comprises an avalanche transistor, an energy storage capacitor and a charging resistor which are alternately connected in series; the waveform adjusting inductor L is connected between the output end of the parallel Marx circuit and the load resistor RL and is used for adjusting the waveform; the gate driving chip is connected to the collector electrode and the base electrode of the first-stage avalanche transistor of the Marx circuit and used for triggering synchronous conduction of the avalanche transistor; a 300V power supply VDC charges the four Marx circuits through a charging resistor, after charging, pulses generated by a gate driving chip enter the four Marx circuits, first-stage avalanche transistors of the four Marx circuits are made to be simultaneously subjected to avalanche conduction, and the avalanche transistors of all stages are conducted stage by stage due to the fact that the voltage borne by the avalanche transistors is increased; after the avalanche of each transistor is conducted, the four marx circuits are connected in parallel to release energy to a load through a waveform adjusting inductor, and a required waveform is formed on the load; the device has the characteristics of convenient design, simple structure, stability and reliability.

The invention belongs to the technical field of power semiconductor device packaging, and particularly discloses an avalanche transistor, a multi-chip series integrated packaging structure thereof and a working method. The integrated packaging structure comprises a chip module formed by n stacked avalanche transistors, an epitaxial layer is arranged above a substrate of a single avalanche transistor, and a base electrode and an emitter electrode are arranged above the epitaxial layer; the collector electrode is located below the substrate, and surface heat dissipation isolation layers are arranged in other areas above the epitaxial layer except a base electrode area and an emitting electrode area; the resistor connecting piece and the voltage-sharing resistor are located on the side faces of the epitaxial layer and the substrate, and one side of the resistor connecting piece is connected with the collector. According to the invention, parasitic inductance and parasitic capacitance can be effectively reduced, and the switching performance of the avalanche transistor is improved.

This invention discloses a method, apparatus, device, and storage medium for detecting defects in distribution network cables. Its features include: generating a high-frequency, short-time excitation signal using an avalanche transistor circuit and injecting the high-frequency, short-time excitation signal into a cable simulation model of the target distribution network cable; acquiring scattered signal parameters of the cable simulation model based on at least one preset signal acquisition port; generating a time-frequency domain optimal excitation waveform corresponding to each scattered signal parameter; and sequentially injecting each time-frequency domain optimal excitation waveform into the cable simulation model to determine the distribution network cable defect corresponding to the cable simulation model. This invention can effectively eliminate interference caused by cable topology, achieve high-sensitivity detection of weak defects, and can be safely implemented without power outages, effectively identifying real defects in the distribution network power supply.

The application discloses a kind of suitable for voltage pulse trigger's superfast avalanche transistor, including by lower to upper setting collector region electrode, collector electrode area n+Substrate layer, collector electrode area n0Epitaxial layer, p+Base region layer and n+Emission region layer, p+Base region layer is equipped with annular deep well structure, deep well structure adopts SiO2-Si3N4;It also includes base electrode and emission electrode, the surface of collector electrode area n0Epitaxial layer is covered with a layer of oxide layer, oxide layer is covered with metal field plate, metal field plate is in contact with base electrode, the bottom of metal field plate is in contact with p+Base region layer through oxide layer, n+Emission region layer surface is covered with a layer of doped oxygen semi-insulating polysilicon layer, the bottom of emission electrode is in contact with n+Emission region layer through doped oxygen semi-insulating polysilicon layer.The application can effectively improve the dynamic opening speed of avalanche transistor when base-emitter short-circuit, voltage pulse trigger, optimize the voltage output rising edge characteristics of pulse generator based on avalanche transistor.

The invention relates to a high-altitude electromagnetic pulse simulation device, in particular to an all-solid-state high-altitude electromagnetic pulse standard source based on a multi-tube series avalanche tube Marx circuit. The technical problem that due to inherent parasitic inductance existing in a discharge loop of an existing multi-tube series avalanche tube Marx circuit, output pulses cannot meet the requirements of high amplitude, fast leading edge and low jitter at the same time is solved. The standard source comprises a direct current charging power supply, a trigger unit, an avalanche transistor Marx circuit, a coaxial output cable, a radiating antenna and a waveform modulation structure. A multi-tube series avalanche tube Marx circuit topological structure is improved, an additional waveform modulation structure is introduced, the rising time of output pulses is effectively shortened, the technical problem that the pulse leading edge of a multi-tube series circuit is broadened due to parasitic inductance is solved, and the output pulse of the multi-tube series circuit is increased. And the high-altitude electromagnetic pulse waveform which is high in amplitude, fast in leading edge and low in jitter and meets the requirements of the international electrician committee standard can be generated.

The invention discloses a high repetition frequency pulse generation circuit, system and method based on irradiation avalanche transistors. The circuit comprises a plurality of irradiation avalanche transistor units, a first coaxial line TL1 and a second coaxial line TL2. The plurality of irradiation avalanche transistor units are sequentially connected in an overvoltage triggering manner, the input end of the first-stage irradiation avalanche transistor unit is connected with a first coaxial line TL1, and the output end of the last-stage irradiation avalanche transistor unit is connected with a second coaxial line TL2; the first coaxial line TL1 is used for accessing a pulse signal, and the second coaxial line TL2 is used for outputting a high repetition frequency pulse signal. According to the invention, faster recovery response of the avalanche transistor and higher thermal stability of the Marx circuit are realized through cooperation of device characteristic optimization, circuit structure design and thermal management, so that the repetition frequency operation capability and long-term working reliability of the circuit are significantly improved; and the requirements of the fields of high repetition frequency ultra-wide spectrum pulse sources, precision detection and the like on a high-performance pulse generation circuit are met.

The invention belongs to the technical field of instrument application, and provides a multipath synchronous fast rising edge pulse generation device, which comprises an input trigger pulse conditioning circuit, an FPGA (Field Programmable Gate Array) module, a program control pulse delay circuit, a multipath fast pulse signal generation circuit based on an avalanche triode, a multipath clock fan-out buffer and a time-to-digital conversion circuit, the FPGA is combined with the program control pulse signal delay circuit to generate picosecond-level delay trigger pulses, the avalanche triode-based fast pulse signal generation circuit is triggered to generate fast rising edge pulse signals, high-amplitude pulse signal output is generated, and the driving capability is ensured; moreover, the time difference between the output synchronization pulse and the reference pulse is measured through the time-to-digital conversion circuit, and the trigger pulse delay of each avalanche transistor fast pulse signal generation circuit is adjusted through the FPGA and the program control pulse signal delay circuit, thereby achieving the synchronization adjustment of each pulse. The problem that the synchronism of multiple paths of pulses becomes poor due to changes of factors such as temperature and power supply voltage is effectively solved.

This invention provides a dual-injection avalanche transistor and its fabrication method, which solves the problems of existing avalanche transistors having high on-state voltage drop and losses due to the need to maintain a high-field-strength collisional ionization region, and the impact of temperature rise caused by on-state losses on performance under high-repetition-rate operation. The transistor includes a collector region n... + Substrate layer, collector region n0 epitaxial layer, p-type base region layer, n + Launch zone layer, multiple p + Field ring, and located in the collector area n + The collector region p between the substrate layer and the collector region n0 epitaxial layer + The injection layer, the top of the collector region n0 epitaxial layer has multiple first annular grooves, p + The field ring is located within the first annular groove, with its top flush with the top of the epitaxial layer of the collector region n0. Collector region p + p of the injection layer + Doping concentration greater than collector region n + substrate n + Doping concentration, n + n of the launch zone layer + The doping concentration is greater than the p-type doping concentration of the p-type base layer, n + n of the launch zone layer + Doping concentration and p + p of the field ring + The doping concentration is related to the collector region n + substrate n + The doping concentrations are on the same order of magnitude.