Adjustable pulse width pulse generating circuit for semiconductor laser

A technology of pulse generation circuit and laser, which is applied in the electronic field, can solve the problems of limited pulse signal use, non-adjustable pulse width, and insufficient output pulse amplitude, so as to achieve the effect of convenient driving

Inactive Publication Date: 2017-06-27
EAST CHINA NORMAL UNIV
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The pulse width of the output signal of the pulse generator in the prior art is generally above 200 ps, ​​and the amplitude of the outpu...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Adjustable pulse width pulse generating circuit for semiconductor laser
  • Adjustable pulse width pulse generating circuit for semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0024] In an embodiment of the present invention, an adjustable pulse width pulse generation circuit for a semiconductor laser is provided, see figure 2 , each part of this embodiment will be described in detail below.

[0025] trigger signal generation circuit

[0026] In this embodiment, the trigger signal generating circuit is a square wave generating circuit, which includes: an active crystal oscillator U1 and a comparator U2, the output end of the active crystal oscillator U1 is connected to the first input end of the comparator U2, and the second input end of the comparator U2 The terminal is connected to a fixed voltage signal; the active crystal oscillator U1 generates a sine signal with a fixed frequency, which becomes a square wave signal with a fast rising edge after passing through the comparator U2; it generates a square wave signal with an amplitude of 5V and a repetition frequency of 1.8M , the rising edge of the trigger signal is 1ns.

[0027] Avalanche tran...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention discloses an adjustable pulse width pulse generating circuit for a semiconductor laser. The adjustable pulse width pulse generating circuit comprises trigger signals, an avalanche transistor pulse generating circuit and a step recovery diode shaping circuit; the avalanche transistor pulse generating circuit receives the trigger signals; and the step recovery diode shaping circuit is connected with the avalanche transistor pulse generating circuit. According to the adjustable pulse width pulse generating circuit for the semiconductor laser of the invention, the avalanche characteristic of an avalanche transistor and the step characteristic of a step recovery diode are utilized to generate large-amplitude narrow pulse signals; and the pulse width of the narrow pulse signals can be as low as 165ps and can be adjusted. The adjustable pulse width pulse generating circuit for the semiconductor laser can be conveniently applied to the driving of the semiconductor laser.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to an adjustable pulse width pulse generation circuit for semiconductor lasers. Background technique [0002] Pulsed semiconductor lasers have great potential application value in optical fiber communication, laser ranging, laser fuze, 3D image system, data storage and other fields. Semiconductor lasers can use gain conversion technology to directly generate laser pulses. Compared with solid-state lasers, they have the advantages of small size and low price. The characteristics of the optical pulse signal output by the semiconductor laser are directly controlled by the electrical pulse, so the characteristics of the electrical pulse have a crucial impact on the output characteristics of the optical pulse of the semiconductor laser. In order to obtain a higher peak power of the optical pulse, the amplitude of the electrical pulse signal needs to be as large as possible and the w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S5/042
CPCH01S5/042
Inventor 陈少强李鹏涛田赟鹏冉旭
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap