Self-adaptive avalanche transistor pulse generator

Abstract

The invention discloses a self-adaptive avalanche transistor pulse generator. The self-adaptive avalanche transistor pulse generator comprises an avalanche transistor pulse generation circuit, and also comprises a leakage current sampling circuit, a comparison circuit and a regulated power supply circuit, wherein the comparison circuit is used for comparing voltage of the leakage current sampling circuit with size of reference voltage Vref value to form an output signal; the regulated power supply circuit is used for applying voltage to the avalanche transistor pulse generation circuit, and is provided with a control end for receiving the output signal of the comparison circuit to realize voltage control of the regulated power supply circuit; the leakage current sampling circuit is serially connected into a collector loop of a transistor of the avalanche transistor pulse generation circuit for sampling leakage current of the transistor; the input end of the compassion circuit is electrically connected with the leakage current sampling circuit; the output end of the comparison circuit is connected with the control end of the regulated power supply circuit; the regulated power supply circuit is connected with the avalanche transistor pulse generation circuit. Discreteness influence on parameters of the transistor is well solved without adjusting power supply voltage manually, and the self-adaptive avalanche transistor pulse generator is suitable for batch production.

Description

technical field [0001] The invention relates to a pulse generator in the field of electronics, in particular to an adaptive avalanche triode pulse generator. Background technique [0002] The pulse generator is a frequently used device in the field of electronics and communication, such as figure 1 The pulse generator shown is the most typical pulse generator in use today. In order to generate extremely narrow pulses, the transistor Q1 must enter a critical state of avalanche breakdown. In order to ensure that the triode Q1 can avalanche breakdown under the action of the excitation source V2 and generate extremely narrow pulses, it is necessary to adjust the power supply voltage V1, and V1 must be greater than BV CEO (CE junction breakdown voltage when the transistor base is open), when the excitation source V2 generates a forward pulse through the differential circuit of the first capacitor C1 and the first resistor R1, the avalanche transistor Q1 instantly enters the ava...

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Problems solved by technology

And the triode parameter BV CBO 、BV CEO There is a large discreteness, even if the same type of triode, the product parameters of different batches and different manufacturers will have a large difference, the extremely narrow pulse generating circuit of this structure needs to manually adjust the power supply voltage to ensure norm

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