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Ultra-narrow pulse generation device combined feeding device and method

A technology for generating devices and ultra-narrow pulses, used in radio wave measurement systems, instruments, etc.

Active Publication Date: 2017-02-15
SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] However, there are many problems when the ultra-narrow pulse source based on avalanche triode obtains high repetition frequency and high peak power ultra-narrow pulse signal

Method used

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  • Ultra-narrow pulse generation device combined feeding device and method
  • Ultra-narrow pulse generation device combined feeding device and method
  • Ultra-narrow pulse generation device combined feeding device and method

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Experimental program
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Embodiment 1

[0071] Embodiment one: if figure 1 As shown, the device of the present invention includes a resonant circuit, a 14-stage RC charging circuit and a 14-stage avalanche discharge circuit (hereinafter referred to as the main circuit), a DC blocking capacitor C 15 : The first stage RC charging circuit includes the isolation resistor R 1 , isolation resistance R 15 and storage capacitor C 1 ;The second stage RC charging circuit includes the isolation resistor R 2 , isolation resistance R 16 and the second storage capacitor C 2 ; The 14th stage RC charging and discharging circuit includes the isolation resistor R 14 , isolation resistance R 28 and the 14th stage energy storage capacitor C 14 ; The first-stage avalanche discharge circuit includes the first-stage energy storage capacitor C1, the avalanche tube V 1 , V 2 ; The second-level avalanche discharge circuit includes the second-level energy storage capacitor C 2 and the avalanche tube V 3 , V 4 ; The 14th level ava...

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PUM

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Abstract

The invention relates to the field of high-power microwaves, and provides an ultra-narrow pulse generation device combined feeding device and an ultra-narrow pulse generation device combined feeding method for solving the problem existing in the prior art. The ultra-narrow pulse generation device combined feeding device and the ultra-narrow pulse generation device combined feeding method improve the energy conversion efficiency and high-repetition-frequency output power of an ultra-narrow pulse source based on an avalanche transistor, and provide a better solution for arrayed application. According to the ultra-narrow pulse generation device, the time that a power supply end high-level signal is ahead of an ultra-wideband narrow pulse voltage signal is greater than the complete resonant charging time of an arbitrary stage RC charging loop; an ultra-wideband narrow pulse voltage Vf is input to one end of a first stage energy storage capacitor which is away from a second stage energy storage capacitor, a first stage avalanche transistor circuit discharges, and an output voltage value of an output end of a first stage avalanche discharge loop is Vf+V without considering circuit loss; and an output voltage value of an output end of an i stage avalanche discharge loop is Vf+i*V.

Description

technical field [0001] The invention relates to the field of high-power microwave (HPM), in particular to an ultra-narrow pulse generating device composite feeding device and a method. Background technique [0002] The ultra-narrow pulse signal has a very short duration and a wide spectrum width, which theoretically will interfere with all current electronic systems. The ultra-wideband radar (carrier-free radar) using ultra-narrow pulse signals has advantages that conventional radars cannot match, such as high distance resolution, low intercept probability, anti-stealth, anti-jamming, anti-anti-radiation missile, and strong penetration. . [0003] At present, a class of ultra-narrow pulse sources based on avalanche transistors (hereinafter referred to as avalanche transistors) can provide 10kHz-level repetition frequency, ns-level pulse width, kV-level output voltage amplitude, 100ps-level rising edge and 10ps-level leading edge jitter , and has the characteristics of smal...

Claims

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Application Information

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IPC IPC(8): G01S7/282
CPCG01S7/282
Inventor 罗尧天谭世川童允王洪肖建平
Owner SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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