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Narrow pulse high-current semiconductor laser device driving circuit

A technology for driving circuits and lasers, applied to semiconductor lasers, lasers, laser parts, etc., can solve the problems of small driving current, poor controllability, low precision, etc., and achieve the effect of large driving current

Inactive Publication Date: 2009-11-25
SHANGHAI BOOM FIBER SENSING TECH
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  • Abstract
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Problems solved by technology

[0005] The design principle of the traditional narrow-pulse high-current semiconductor laser drive circuit is that the synchronous signal triggers the high-power transistor to be turned on and off to control the light pulse trigger frequency, and by selecting the size of different energy storage capacitors C (usually taken from a few picofarads to tens of picofarad) to control the output light pulse width of the semiconductor laser, there are shortcomings such as large output light pulse width of the semiconductor laser, small driving current, low precision, poor controllability, etc.

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  • Narrow pulse high-current semiconductor laser device driving circuit

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Embodiment Construction

[0031] Please see attached figure 1 As shown, the narrow-pulse high-current semiconductor laser driving circuit of the present invention includes a laser, a high-frequency pulse control circuit and a driving circuit. The drive circuit includes a semiconductor high-speed switch module and an energy storage circuit. The output end of the high-frequency pulse control circuit is connected to the input end of the semiconductor high-speed switch module, and the input end of the high-frequency pulse control circuit is connected to the input end of the energy storage circuit. The terminals are respectively connected to the semiconductor high-speed switch module of the energy storage circuit. The high-frequency pulse control circuit uses a programmable logic chip (CPLD) of the model EPM7064STC44-5 as the main control chip, and outputs nanosecond-level narrow pulse signals to control the light pulse trigger frequency and Width, the semiconductor high-speed switch module uses an avalanch...

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Abstract

The invention provides a narrow pulse high-current semiconductor laser device driving circuit, which includes a laser, a high frequency pulse control circuit and a driving circuit. The driving circuit includes a semi-conductor high speed switch module and a tank circuit, and the output end of the high frequency pulse control circuit is connected with the input end of the semi-conductor high speed switch module, and the input end of the high frequency pulse control circuit is connected with the input end of the tank circuit, and both ends of the laser are respectively connected with the semi-conductor high speed switch module of the tank circuit. The constant-current source charges the energy storage capacity through the protection resistor, and the energy storage capacity discharges, and the high frequency pulse control circuit outputs narrow pulse to trigger conduction of the avalanche transistor, and the energy storage capacity outputs high-current for the laser to produce pulsed laser, then the avalanche transistor cuts off to wait for input of novel narrow pulse.The light impulse width of the product provided by the invention is between 5ns-25ns, and the precision of the modulation is 5ns, thereby realizing drive current with maximum peak value of 45A is adjustable in repeat frequency of 1 kHz-10kHz, and the modulation precision is 1kHz.

Description

technical field [0001] The invention relates to a laser drive circuit, in particular to a narrow-pulse high-current semiconductor laser drive circuit. Background technique [0002] With the development and wide application of optical fiber sensing technology, people have higher and higher requirements for the design index of narrow pulse and high current semiconductor laser drive circuit. Therefore, how to apply CPLD technology with unique advantages to narrow pulse frequency control has become a research hotspot in recent years. The narrow-pulse high-current semiconductor laser drive circuit is to control the high-speed transistor to drive the semiconductor laser by generating, transmitting, and a narrow pulse with a duration of about several nanoseconds (ns) to tens of ns, so as to obtain the same high-power narrow light pulse signal. From the perspective of distributed optical fiber sensing technology, the narrower the high-power optical pulse signal is, the more benefi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/042H03K19/0175H03L7/00H03K3/017G05B19/04
Inventor 杨斌皋魏席刚周正仙仝芳轩
Owner SHANGHAI BOOM FIBER SENSING TECH
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