Vertical-external-cavity surface-emitting semiconductor laser with integrated micro lens

A microlens and laser technology, applied in semiconductor lasers, lasers, laser parts, etc., can solve the problems of unstable working state of external cavity structure external cavity mirror, unsatisfactory laser spectral linewidth, and poor mode stability, etc. Large-scale low-cost production, reduced divergence angle, and less impact on the external environment
CN102723665AInactive Publication Date: 2012-10-10CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Publication Date
2012-10-10
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a vertical-external-cavity surface-emitting semiconductor laser with an integrated micro lens and belongs to the technical field of semiconductor optoelectronics. The vertical-external-cavity surface-emitting semiconductor laser solves the problems of high difficulty in structural manufacturing and instability in operation of an existing VECSEL (vertical vertical-external-cavity surface-emitting-laser). The laser comprises an N-face electrode, an N-type substrate, an N-type DBR (distributed bragg reflector), an active layer, an oxidation limiting layer, a P-type DBR, a P-face electrode, a micro lens structure, an external coupled cavity and an external cavity DBR. When the P face is used for light outgoing, the micro lens structure is positioned at a light outlet and formed on the P-type DBR, the external coupled cavity grows on the micro lens structure, and the external cavity DBR grows on the external coupled cavity. When the N face is used for light outgoing, the micro lens structure is positioned at the light outlet and formed on the N-type DBR, the external coupled cavity grows on the micro lens structure, and the external cavity DBR grows on the external coupled cavity. The problem of failure in alignment of an external cavity reflector center to a light outlet center is solved by the integral structure of the vertical-external-cavity surface-emitting semiconductor laser.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor optoelectronics, and in particular relates to a vertical external cavity surface-emitting semiconductor laser with integrated microlenses. Background technique

[0002] VCSEL is a semiconductor laser that emits light vertically on the surface. It has the advantages of low threshold, high power density, and easy monolithic integration. It has important applications in information storage, space communication, and satellite navigation. With the expansion of application fields, reducing the divergence angle and spectral linewidth of devices has become a research hotspot in recent years.

[0003] The existing vertical cavity surface emitting semiconductor laser structure includes N-face electrode, substrate, buffer layer, N-type DBR, active region, oxidation confinement layer, P-type DBR and P-face electrode from bottom to top; due to the uniformity of the DBR structure The reflection character...

Claims

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